SOT125 Search Results

Contextual Info: Package outline Plastic earless flanged cavity package; 8 leads SOT1252-1 D F A 5 w1 D1 v B A U1 B c H1 6 H 2 1 9 U2 E1 E A 7 3 4 8 Q e w2 b1 b B w2 e1 0.50 5 10 mm 0.02 scale Dimensions Unit 1 b b1 c max 4.65 nom min 4.18 1.37 11.78 0.20 1.17 11.58 0.10

Contextual Info: Package outline Plastic earless flanged cavity package; 4 leads SOT1250-1 D F A 5 w1 D1 v B A U1 B c H1 1 H y 2 U2 E1 A 3 E 4 w2 b1 B Q e 5 10 mm scale Dimensions Unit 1 b1 c max 4.85 nom min 4.18 11.79 0.20 11.58 0.10 max 0.183 inches nom min 0.164 0.464

Contextual Info: Package outline Earless flanged LDMOST ceramic package; 4 leads SOT1256-1 D A F D1 D c U1 w2 H1 H D U2 E1 E L b w3 Q e 5 10 mm scale Dimensions Unit 1 max nom min mm A b c 5.5 11.81 0.18 31.55 31.52 4.2 11.56 0.10 30.94 30.96 0.465 0.007 1.242 1.241 0.455

transistor TL431 tl432

Abstract: TL431CLPM SLVA001D TL431CDR TL431ILPM TL431CA LM317 spice model TL431IPKG3 sot125 transistor TL431 to92
Contextual Info: TL431, TL431A, TL431B TL432, TL432A, TL432B ADJUSTABLE PRECISION SHUNT REGULATORS SLVS543I − AUGUST 2004 − REVISED MAY 2005 D Operation From −40°C to 125°C D Reference Voltage Tolerance at 25°C D − 0.5% . . . B Grade − 1% . . . A Grade − 2% . . . Standard Grade

Contextual Info: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

HDR1X4

Abstract: power connector hdr1x2 HDR2X16 HDR1X2 Header HDR1X4 UPD78C06G 8x2 connector header RAD02 HDR2X5 TO220H
Contextual Info: MB95F108xxx Low cost Starter kit User Guide Fujitsu Microelectronics America, Inc Fujitsu Microelectronics America, Inc 1 Revision History Revision# 1.0 Date 12/15/06 Fujitsu Microelectronics America, Inc Comments New Revision 2 Warranty and Disclaimer To the maximum extent permitted by applicable law, Fujitsu Microelectronics America Inc

HDR1X4

Abstract: Header HDR1X4 HDR1X2 8x2 connector header power connector hdr1x2 HDR2X5 HDR2X16 QFP10x10-52 HDR1X3 V01L05
Contextual Info: MB95F118xxx Low cost Starter kit User Guide Fujitsu Microelectronics America, Inc Fujitsu Microelectronics America, Inc 1 Revision History Revision# 1.0 Date 12/15/06 Fujitsu Microelectronics America, Inc Comments New Revision 2 Warranty and Disclaimer To the maximum extent permitted by applicable law, Fujitsu Microelectronics America Inc

Contextual Info: BLC8G24LS-240AV Power LDMOS transistor Rev. 1 — 26 September 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.