SOT23 MARKING GF Search Results

Mosfet

Abstract: SSF2418E 2418E
Contextual Info: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF2160G4 marking s25
Contextual Info: SSF2160G4 20V N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 28mohm(typ.) ID 4.5A 2160G4 S25 Marking and Pin SOT23-3 Assignment Schematic Diagram Features and Benefits       Advanced trench MOSFET process technology Special designed for buttery protection, load

Mosfet

Abstract: SSF3051G7
Contextual Info: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits:       Advanced trench MOSFET process technology Special designed for buttery protection, load

2n4416 and application note

Abstract: TSSOP-8 footprint and soldering sot-23 2N4416 equivalent Siliconix sot23 marking THERMAL SWITCH SC-75A sot-23 Marking N2 699 marking code sot23-5 marking code v6 SOT23 V30114 marking code 20L sot-23 sot23
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 −v6 −30 4.5 5 2N4416A −2.5 to −6 −35 4.5 5 SST4416 −v6 −30 4.5 5 FEATURES BENEFITS D Excellent High-Frequency Gain:

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

P-channel Trench MOSFET

Contextual Info: < X >G e n e r a l v S e m ic o n d u c t o r _ GF2301 P-Channel Enhancement-Mode MOSFET # % LowVGS<th VDS-20V RdS(ON)0.13Q Id-2.3A TO-236AB (SOT-23) 0.031 (0.8) Hh Top View -F p - Pin Configuration 0 .0 3 5 (0.9) 0.079 (2.0) 1. Gate 2. Source

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

AN102

Abstract: AN106 SST200 SST200A ultra low igss pA
Contextual Info: SST200/200A New Product Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) –0.3 to –0.9 –25 0.25 0.7 FEATURES BENEFITS APPLICATIONS D D D D D High Quality Low-Level Signal Amplification D Low Signal Loss/System Error

ultra low igss pA

Abstract: hearing aid microphone hearing aids Siliconix AN102 SST200 AN102 AN106 SST200A Vishay AN106
Contextual Info: SST200/200A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) -0.3 to -0.9 -25 0.25 0.15 FEATURES D D D D Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS

marking ZS SOT-23

Abstract: marking M2 JFET BSR56
Contextual Info: SILICONIX INC ÎÔE D • 0254735 0G13öbT 7 ■ BSR56 SERIES J 7 IS S & 1 T-35-Z.S N-Channel JFETs The BSR56 Series Is a n-ohannel JFET mounted in our popular SOT-23 package, Its low cost and c d s ON make It a good choice for an all-purpose analog switch, while Its high gfa' and good

Contextual Info: SST200/200A New Product Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) –0.3 to –0.9 –25 0.25 0.15 FEATURES BENEFITS APPLICATIONS D D D D D High Quality Low-Level Signal Amplification D Low Signal Loss/System Error

GF2304

Contextual Info: v G eneral S e m ic o n d u c t o r _ GF2304 N-Channel Enhancement-Mode MOSFET % VdS 30V RdS ON 0.117Q Id 2.5A TO-236AB (SOT-23) . 1 1 8 ( 3 .0 ) . 1 1 0 ( 2 .8 ) 0.031 (0.8) . 0 2 0 ( 0 . 51 ) . 0 1 5 ( 0 .37 ) .TiT . .041 ( 1 .03 )

Vishay AN106

Abstract: Vishay AN102 hearing aids AN102 AN106 SST200 SST200A Marking Code For marking code vishay SILICONIX to-236
Contextual Info: SST200/200A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) -0.3 to -0.9 -25 0.25 0.15 FEATURES D D D D Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS

MARKING EA1 sot-23

Abstract: SOT-23 EA1 sot-23 MARKING GU GY SOT-23 RF1 marking limiter diode APD0520-000 marking GD DMJ3952-020 EA1 sot-23 MARKING EA1
Contextual Info: Diodes LIMITER DIODES Plastic Packaged Silicon Limiter Diodes Part Number VB IR = 10 µA V CT (pF) 0 V, F = 1 MHz CT (pF) 0 V F = 1 GHz RS IF = 10 mA Ω) F = 100 MHz (Ω Carrier Lifetime TL (ns) IF = 10 mA Package SMP1330 Series 20–50 0.7 Typ., 1.0 Max.

J201 Replacement

Abstract: j201 marking code vishay SILICONIX sot-23 vishay siliconix code marking to-92 siliconix j201 Marking 02 SOT23 MARKING PA SOT-23 LS SOT23 sot-23 MARKING 3l sot23 DEVICE marking AV
Contextual Info: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures

marking H3t sot23

Abstract: sot-23 marking 7z H3T TIME UNIT MMBFJ310 MMBT404 MMBT918 MMBT404A MOTOROLA 2N marking LG sot-23 7Z SOT23
Contextual Info: r DE | t , 3 t , 7 S S 4 sc -c x s t r s / r F} 6367254 MOTOROLA SCCXSTRS/R motorola F 96D 8 2 0 1 2 . i D GflED ia D T ^ ï- â 5 M A X IM U M RA TIN G S Symbol Value Unit Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage Vg S 25 Vdc >G 10 mAdc Rating

ML5203

Abstract: ML5103 ML2803 ML6302 sot-23 marking code pe AN-994 marking code pe sot-23 MOSFET IRL SOT-23 marking code BS marking BS SOT-23
Contextual Info: IRLML6402PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

GF3443

Contextual Info: GF3443 P-Channel Logic Level Enhancement-Mode MOSFET « V D S -2 0 V R d S ON 65m Q Id - 4 . 4 A SOT-23, S0T-23-6L v G eneral S e m ic o n ] Mechanical Data_ Features_ Case: SOT-23-6L package Terminals: Leads solderable per MIL-STD-750,

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

GF2303A

Abstract: 1s sot-23
Contextual Info: GF2303A P-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 t c u d o r P H C w e N N TREENFET Top View G .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.035 (0.9) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Dimensions in inches

MOSFET SOT-23 marking 122

Contextual Info: GF2301 P-Channel Enhancement-Mode MOSFET Low V t c u d o r P H C w e N N TREENFET Top View G GS th TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.031 (0.8) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source