SOT439 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A

RX1214B300Y

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RX1214B300Y PINNING - SOT439A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

gk06

Abstract: microwave transistor S- parameter GK066
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT439A D A F 3 D1 U1 B q C c 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

MX0912B351Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A

MX0912B251Y

Abstract: capacitor 470 uF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A

RX1214B300Y

Abstract: RX1214B300 L-Band
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A

Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency

JH transistor

Abstract: MX0912B251Y SC15 Philips electrolytic screw
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

transistor 359 AJ

Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency

GL-056

Abstract: sot439
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B351Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT439A D A F 3 D1 U1 B q C c 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c

microwave transistor 03

Abstract: MX0912B351Y SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

339 marking code transistor

Abstract: BP317 MX1011B430W SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B430W NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

BP317

Abstract: LXE18300X SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

865 RF transistor

Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is

SL 100 NPN Transistor

Abstract: PXB16050U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PXB16050U FEATURES QUICK REFERENCE DATA • Input and output matching cells allow an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, 10% duty factor MX1011B200Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C