SOT44 Search Results

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT448A D A F 3 D1 U1 B q c C 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c

Contextual Info: Package outline Studless ceramic package; 4 leads SOT441A D A Q c D1 H b 4 b1 3 H 1 2 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b b1 c D D1 H Q mm 2.48 1.60 3.23 3.13 0.81 0.71 0.16 0.10 3.38 3.08 5.34 5.08 19 17 1.15 0.89 inches 0.098

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT440A D A F 3 D1 B U1 q C b1 c 1 H U2 E1 A E w1 M A M B M p 2 Q w2 M C M b 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b

SOJ40

Contextual Info: PDF: 2003 Mar 24 Philips Semiconductors Package outline SOJ40: plastic small outline package; 40 leads J-bent ; body width 10.16 mm SOT449-1 X D c eE y bp 40 b1 A 21 w M E HE A2 A pin 1 index A1 (A 3) 1 20 Lp ZD e detail X v M A 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

PVB42004X

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PVB42004X FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

E50R

Abstract: 1721E50R MAM251 LV1721E50R SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEA TU R ES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high V S W R

TIC 122 Transistor

Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT

sot441

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT441A D A Q c D1 H b 4 b1 3 H 1 2 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b b1 c D D1 H Q mm 2.48 1.60 3.23 3.13 0.81 0.71 0.16 0.10 3.38 3.08

sot445

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT

LZ14

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES LZ1418E100R PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

BP317

Abstract: LTE21025R marking code 439
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent

BLS3135-10

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications

LZ1418E100R

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT443A D A F 3 D1 U1 B q C c 1 L U2 E1 A w1 M A M B M p L E 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2

SOJ40

Abstract: MS-027 sot449
Contextual Info: PDF: 2003 Apr 15 Philips Semiconductors Package outline SOJ40: plastic small outline package; 40 leads J-bent ; body width 10.16 mm SOT449-2 X D c eE y bp 40 b1 A 21 w M E HE A A2 pin 1 index A1 (A3) 1 Lp 20 ZD e detail X v M A 5 10 mm scale DIMENSIONS (mm dimensions are derived from the original inch dimensions)

MCD628

Abstract: LTE42008R SC15 transistor marking code 1325 ss 297 transistor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 collector • Gold metallization realizes very stable characteristics

transistor 38W

Abstract: transistor 38W 3 pin 38w transistor PZB16035U SC15 transistor 38W 16
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PZB16035U PINNING - SOT443A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

transistor top 222

Abstract: LTE21025R SC15 marking code 439
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT