SOT445 Search Results

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2

PVB42004X

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PVB42004X FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

E50R

Abstract: 1721E50R MAM251 LV1721E50R SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEA TU R ES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high V S W R

TIC 122 Transistor

Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT

sot445

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT

BLS3135-10

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT

1721E50R

Abstract: MSA096 LV1721E50R
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LV1721E50R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency

2024E45R

Abstract: LV2024E45R SC15 MAM251
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LV2024E45R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LVE21050R PINNING - SOT445A FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN DESCRIPTION 1 • Self-aligned process entirely ion implanted

BLS2731-10

Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PVB42004X PINNING - SOT445A • tnterdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LV2024E45R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

BP317

Abstract: LVE21050R
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor LVE21050R FEATURES PINNING - SOT445A • Diffused emitter ballasting resistors provide excellent

BLS2731-20

Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

PVB42004X

Abstract: SC15 sot445
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

865 RF transistor

Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is