SOT89 93 Search Results

TS16949

Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

ZXTN19100CZ

Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ
Contextual Info: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

PBSS302NX

Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267
Contextual Info: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these

FCX1149A

Abstract: DSA003683
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;

FMMT591A

Abstract: FCX491A FCX591A MARKING 93 SOT89 DSA003685
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FCX591A ISSUE 3 - OCTOBER 1995 PART MARKING DETAIL COMPLEMENTARY TYPE - C P2 FCX491A B ABSOLUTE MAXIMUM RATINGS. C E PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm

PBHV9040T

Abstract: piezo actuator driver PBHV9040Z PBHV8115T PBHV8540T PBHV8540Z PBHV9115T PMBTA44 SC-73 PBHV8115X
Contextual Info: NXP BISS high voltage transistors in SOT23, SOT89 SC-62 and SOT223 (SC-73) Boost performance with BISS HV technology Helping you keep ahead of increasing demands on system performance, our latest series of BISS (Breakthrough In Small-Signal) high voltage transistors

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

Contextual Info: MMIC AP201 Product Features • • • • • • • • • Application • • • • • Small size SMD Type Package NO matching circuit needed High efficiency Higher linearity SOT89 Type Package Higher productivity Lower manufacturing cost GaAs MMIC

MMA701-SOT89

Abstract: MCE Metelics
Contextual Info: MMA701-SOT89 Load Pull Frequency in MHz Vce=5.00V Freq. Mag Angle 824 837 849 869 881 894 910 930 960 1710 1740 1770 1790 1820 1850 1910 1930 1960 1990 2110 2140 2170 2400 2450 2500 2600 2700 0.199 0.192 0.191 0.221 0.201 0.177 0.211 0.223 0.231 0.171 0.211

Contextual Info: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m

fpd3000

Abstract: 3024D FPD3000SOT89
Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m

Contextual Info: MMIC AP201 Product Features • • • • • • • • • Application • • • • • Small size SMD Type Package NO matching circuit needed High efficiency Higher linearity SOT89 Type Package Higher productivity Lower manufacturing cost GaAs MMIC

fpd750sot89e

Abstract: Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122
Contextual Info: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

Contextual Info: MMIC AP112 Product Features • • • • • • • • • • • • Application SOT89 Type Package High IP3, High Gain No matching circuit needed 3MHz-2.5GHz -73 dBc CTB, 135Channels, +30dBmV/ch, Single -57 dBc CSO, 135Channels, +30dBmV/ch, Single

Contextual Info: MMIC AP112 Product Features • • • • • • • • • • • • Application SOT89 Type Package High IP3, High Gain No matching circuit needed 3MHz-2.5GHz -73 dBc CTB, 135Channels, +30dBmV/ch, Single -57 dBc CSO, 135Channels, +30dBmV/ch, Single

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

transistor MARKING CODE LAYOUT G SOT89

Abstract: "package marking" 564 ATF-52189-BLK marking 903 sot-89 SOT89 marking GA LNA in WLAN 702 sot c 2665 depletion mode fet e-phemt
Contextual Info: ATF-52189 High Linearity Mode [1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

Contextual Info: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is

TRANSISTOR SMD CODE PACKAGE SOT89 4

Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: