SOT89 TRANSISTOR MARKING 851 Search Results

Contextual Info: BC868 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 High current Low voltage — 2.6 4.25 2.4 3.75 0.8 MIN MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol B Parameter Value Units VCBO Collector-Base Voltage

SMD Marking Code 43a

Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
Contextual Info: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA

PXT8550

Abstract: marking Y2 Y2 SOT-89 transistor marking y2
Contextual Info: PXT8550 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B Features — 2.6 4.25 2.4 3.75 Compliment to PXT8050 0.8 MIN MARKING: Y2 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: 2SB766 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN Large collector power dissipation PC Complementary to 2SD874 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: 2SD874A SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER B 3 Features 2.6 4.25 2.4 3.75 0.8 MIN — Large collector power dissipation PC — Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A — 4.6 4.4 1.8 1.4 1.6 1.4

Y1 SOT-89

Abstract: PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1
Contextual Info: PXT8050 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 B Compliment to PXT8550 2.6 4.25 2.4 3.75 MARKING: Y1 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

utc 2sa684l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA684 PNP SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION The UTC 2SA684 is power amplifier and driver.  FEATURES * Automatic insertion by radial taping possible. * Complementary pair with 2SC1384.  ORDERING INFORMATION

Contextual Info: 2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter 1 Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR  DESCRIPTION The UTC 2SC1384 is power amplifier and driver.  FEATURES * Low VCE SAT * 2~3W output in complementary pair with 2SA684  ORDERING INFORMATION Ordering Number

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage

SOT-89

Abstract: 2SB766
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB766 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage

2SB766

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB766 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage -30 V V(BR)CBO:

BC868

Abstract: BC868-10 BC868-16 BC868-25
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 BC868 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z High current z Low voltage 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD874 Features • • NPN Silicon Power Transistors With SOT-89 package Power amplifier applications Maximum Ratings

2SB766A

Abstract: 2SD874A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z

PXT8050

Abstract: Y2 SOT-89 PXT8550
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors PXT8550 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Compliment to PXT8050 1 2. COLLECTOR 2 MARKING: Y2 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

2SB766

Abstract: 2SD874
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB766 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor marking 6A

Abstract: ZXTN2010Z ZXTN2010ZTA
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

PXT8050

Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

ZXTN2010ZTA

Abstract: ZXTN2010Z 0019E
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

npn 120v 10a transistor

Abstract: ZX5T851Z ZX5T851ZTA
Contextual Info: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

sot-89 Marking code BQ

Contextual Info: WILLAS FM120-M+ 2SB766A THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.