SOT89-5 TRANSISTOR Search Results

bcx5316

Abstract: BCX5616
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage

FCX596

Abstract: FMMT596
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR Issue 4 - November 2006 FCX596 PARTMARKING DETAIL- P96 B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VcB O -220 V Collector-Emitter Voltage V CEO -200 V Emitter-Base Voltage V ebo -5 V Peak Pulse Current

TRANSISTOR SMD CODE PACKAGE SOT89

Abstract: GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ149 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 envelope.

BFQ19

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic

FCX1051A

Abstract: FCX1151A DSA003684
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

fcx720

Abstract: PARTMARKING 619 FCX619 DSA003686
Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 5 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;

Contextual Info: PART OBSOLETE - USE SXTA42 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:

SXTA42

Contextual Info: Not Recommended for New Design Please Use SXTA42 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies

BF620

Abstract: BF621 FMMTA42
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL –

Contextual Info: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is

BFQ19

Abstract: UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor
Contextual Info: 1^53^31 DGSSDt.2 715 B A P X Philips Sem iconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AUER PHILIPS/DISCRETE DESCRIPTION b7E ]>' PINNING NPN transistor In a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is

FCX5401

Abstract: FCX5550 VCEO150V 100-X
Contextual Info: FCX5401 SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEA T U R ES * HIGH V c e o = 1 5 0 V . * LOW V c e SAT i = 0 .2 5 V . * CO M PLEM EN TARY TYP E - FCX5550. PARTM ARKING D ETA ILS - P9 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Collector-Base Voltage

le2m

Abstract: BFN17
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 O COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD BFN16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 250 V -V « o 250 V ^EBO 5 V Collector-Base Voltage C ollector-E m itter Voltage

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 £ _ CO M PLEM ENTARY T Y P E - BFN17 PARTMARKING DETAILS - DD ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V cbo 250 V V CEO 250 V V ebo 5 V mA PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package

Contextual Info: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package

TRANSISTOR SMD MARKING CODE 1d

Abstract: SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code
Contextual Info: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

HT7044A-1

Abstract: HT7027A-1 HT7039A-1 HT7050A-1 0c sot89 HT7033A-1 HT7022A-1 HT7024A-1 HT70XXA-1 marking code w2 sot23-5
Contextual Info: HT70XXA-1 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 3% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Am ps Extrem ely Low Saturation Voltage E.g. 60mv Typ. Extrem ely Low Equivalent On-resistance;

Contextual Info: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package

Contextual Info: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers

PBSS4041PX

Abstract: MARKING SMD TRANSISTOR P TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD TRANSISTOR MARKING 6G
Contextual Info: PBSS4041PX 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.