SOT93 Search Results

BUW13

Abstract: BUW13A buw13a philips semiconductor BA102 BUW13A-S Philips BUW13A
Contextual Info: Product specification Philips Semiconductors BUW13; BUW13A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m oto r co n tro l systems etc.

Contextual Info: Package outline HLSON10R: plastic thermal enhanced low profile small outline package; no leads; 10 terminals; resin based; body 4 x 4 x 1.1 mm SOT931-1 X A B D E A A1 terminal 1 index area detail X e1 terminal 1 index area L1 v w b e 1 5 M M C C A B C y1 C

Contextual Info: Package outline HLQFN56R: plastic thermal enhanced low profile quad flat package; no leads; 56 terminals; resin based; body 8 x 8 x 1.35 mm B D SOT935-2 A terminal 1 index area E A detail X e1 e L1 L C b 1/2 e 15 28 14 C A B C v w y1 C y 29 e e2 Eh 1 terminal 1

buw13a philips semiconductor

Abstract: buw13a BUW13 S0T93 BUW1 buw13a philips
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistors BUW13; BUW13A High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

tip147

Abstract: TIP146 TIP145 tip147 transistor tip142 tip147 TIP140 TIP141 TIP142
Contextual Info: TIP145, TIP146, TIP147 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base PNP transistors in monolithic Darlington configuration and are mounted in SOT93 plastic packtage. They are intended for use in power linear and switching application.

TIP142

Abstract: TIP141 TIP142 TIP147 TIP140 tip141 equivalent TIP-142 SOT93 TIP145 TIP146 TIP147
Contextual Info: TIP140, TIP141, TIP142 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT93 plastic packtage. They are intended for use in power linear and switching application.

Contextual Info: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 DDSB32D 7fiO BU903 IAPX SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope intended fo r use in power supplies and deflection circuits fo r colour receivers and monitors.

BU508A

Abstract: BU508D philips bu508a BY223 diode BY223 transistor BU508D bu50ba BY22B BU508D transistor transistor AS 431
Contextual Info: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D has an integrated efficiency diode.

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT93 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance BUK436 I* r lol °DS(ON) PIN CONFIGURATION

T0-220AB

Abstract: SOT-263
Contextual Info: MECHANICAL DATA page SOT93 618 SOT 186 619 T0220AB 620 SOT223 621 SOT227B 622 SOT263 623 SOT263 lead form option 624

Contextual Info: Package outline TFBGA208: plastic thin fine-pitch ball grid array package; 208 balls; body 12 x 12 x 0.7 mm D B SOT930-1 A ball A1 index area E A A2 A1 detail X C e1 ∅v ∅w b e M M y y1 C C A B C U T R P N e M L K e2 J H G F E D C B A ball A1 index area

Contextual Info: N AMER PHILIPS/DISCRETE BSE D btiSB^Sl QOlfl'in 4 BUV82 BUV83 r-23-13 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

Contextual Info: N AMER PHILIPS/DISCRETE t.'lE D ^ 5 3 ^ 3 1 QQ2fl2fl2 047 I IAPX BU705 BU705D Jl SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D has an integrated efficiency

Contextual Info: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.

BUV89

Abstract: transistor AC 307 PHILIPS discrete LED transistor NES TVP10 transistor y k 425 transistor d 1991 ar
Contextual Info: b^E D N AMER PHILIPS/DISCRETE • bbSB'ìBl GGEflMTO TflS IAPX BUV89 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a plastic SOT93 envelope especially intended for use in AC motor control systems from three-phase mains.

BUW11A

Abstract: d777b BUW11 transistor BU 102
Contextual Info: Product specification Philips Semiconductors BUW11; BUW11A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BU826A

Abstract: BU826 BD227 FL01 5A/M39029/BU826A
Contextual Info: N AMER PHILIPS/DISCRETE b TE D • bb53T31 0020314 4fl7 H A P X BU826 BU826A , SILICON DARLINGTON POWER TRANSISTOR M o n o lith ic high voltage npn D arlin g to n c irc u it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast sw itching ap p lica tio n.

BUP22C

Abstract: BUP22 BUP22B
Contextual Info: 11 N AMER PHILIPS/DISCR ETE 2SE D • bfa53*ï31 OOlflb? b ■ BUP22 SERIES „ T~ - g g - /3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BUV90

Abstract: darlington power transistor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Darlington Power Transistor BUV90 GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.

T0-220AB

Abstract: SOT-263
Contextual Info: MOUNTING INSTRUCTIONS page SOT93 626 SOT186; SOT263; T0220AB 633 SOT227B ISOTOP 639 SOT223 642

Contextual Info: ACCESSORIES page Survey of accessories 654 Accessories for T0220 655 Accessories for SOT186 657 Accessories for SOT93 658

BUW11

Contextual Info: N AUER PHILIPS/DISCRETE bb53= 31 0026515 165 b'lE D APX BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.