SOT963 Search Results

Contextual Info: Package outline TFBGA44: plastic thin fine-pitch ball grid array package; 44 balls; body 3 x 5 x 0.9 mm B D SOT963-1 A ball A1 index area E A A2 A1 detail X e1 e Øv Øw b C C A B C M M y y1 C J H G F e E e2 D C B A ball A1 index area 1 2 3 4 5 X 2.5 5 mm

Contextual Info: CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM7590 is an Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low

8002A

Abstract: 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532
Contextual Info: Small Signal MOSFETs Selection Guide Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOT-963 SOD-523 SOD-323 SOT-323 SOT-363 SOD-123 SOT-143 SOT-26 SOT-28 SMB SMC SOIC-16 TLM Tiny Leadless Module SOT-523 SOT-563 SOD-123F SOT-23 SOT-23F SOT-89

Contextual Info: 05258 VSMF05LCC LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ ✔ ✔ ✔ ✔ Computer Notebooks Communication Systems & Cellular Phones Printers Personnal Digital Assitant PDA Video Equipment IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Contextual Info: DST3946DPJ COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Ultra Small Package Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

Contextual Info: 05258 VSMF05LCC LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ ✔ ✔ ✔ ✔ Computer Notebooks Communication Systems & Cellular Phones Printers Personnal Digital Assitant PDA Video Equipment IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV

Contextual Info: NT IA PL M CO S oH *R Features Applications • Low leakage current ■ Computer notebooks ■ RoHS compliant* ■ Cellular phones ■ Low capacitance - 9 pF ■ Personal Digital Assistants PDAs ■ ESD protection >40 kV ■ Video equipment SOT963-T05C - Surface Mount TVS Diode

marking Q1

Abstract: 50s MARKING CODE SOT-963
Contextual Info: CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM7590 is an Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier

CMRD6263DO

Abstract: marking code CX
Contextual Info: CMRD6263DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRD6263DO are Dual, Isolated, Opposing high quality Schottky Diodes designed for applications where very small size and

US015

Abstract: SOT-963 MOSFET NOTEBOOK us-015
Contextual Info: News Release Released – April 14, 2009 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: tdonofrio@centralsemi.com www.centralsemi.com For Immediate Release Space Saving Dual, 20V, 160mA N-Channel MOSFET

PQMD12

Contextual Info: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot

diodes k2

Abstract: sot963
Contextual Info: 1SS361UDJ ADVANCE INFORMATION DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • • • • • Fast Switching Speed Ultra-Small Surface Mount Package 1.0 x 0.8mm Ultra-Low Profile Package (0.45mm) Low Forward Voltage: typ of 0.62V at IF = 1.0mA

sot963

Abstract: SOT-963
Contextual Info: Package Details - SOT-963 Mechanical Drawing Part Marking: 2-3 Character Alpha/Numeric Code Lead Code: Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (15-December 2008)

HE MARKING SC70-5

Abstract: SP1001-05VTG
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Pinout Features *SP1001-02 (SC70-3) *SP1001-04 (SC70-5) 1 1 5 3 2 4 5 2 3 1 6 NC 2 5 2 3 4 NC *SP1001-05

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

VSMF05LCC-LF-T74

Abstract: marking 5b
Contextual Info: 05258 VSMF05LCC LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ ✔ ✔ ✔ ✔ Computer Notebooks Communication Systems & Cellular Phones Printers Personnal Digital Assitant PDA Video Equipment IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV

transistor cr marking

Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS

AA112A

Abstract: IPC-7351A
Contextual Info: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10

Contextual Info: SURFBOARDS R SURFACE MOUNT TM THE BREADBOARDING MEDIUM FOR 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33106 ACCEPTS IDS33106 REV A- 10-2011 SOT-963 PARTIAL LISTING 6 LEAD .35 mm PITCH DEVICES DEVICE LEAD WIDTH .9, 1.0, To Max 2.2 MM ON SEMI ULLGA6 1.0x1.0,0.35P