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    SPA 11N60C2 Search Results

    SPA 11N60C2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-2R2M=P2
    		Murata Manufacturing Co Ltd Fixed IND 2.2uH 1400mA NONAUTO Visit Murata Manufacturing Co Ltd
    GCM033M8ED104KE07D
    		Murata Manufacturing Co Ltd 0201 (0603M) X8M (Murata) 10Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
    GRT155C80G106ME13D
    		Murata Manufacturing Co Ltd 0402 (1005M) X6S (EIA) 4Vdc 10μF±20% Visit Murata Manufacturing Co Ltd
    GRT31CC71C226ME13L
    		Murata Manufacturing Co Ltd 1206 (3216M) X7S (EIA) 16Vdc 22μF±20% Visit Murata Manufacturing Co Ltd
    KC355QD7LG134KH01L
    		Murata Manufacturing Co Ltd X7T (EIA) 1250Vdc 0.13μF±10% Visit Murata Manufacturing Co Ltd

    SPA 11N60C2 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPA11N60C2
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A Original PDF 133.82KB 12
    SPA11N60C2
    		Infineon Technologies Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced Original PDF 161.93KB 14

    SPA 11N60C2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11n60c2

    Abstract: 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2
    Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated


    Original     		SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 Q67040-S4295 11n60c2 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2 PDF

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original     		SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2 PDF