SPANSION TSOP56 Search Results

S29GL064N application notes

Abstract: TSOP56 FOOTPRINT S29GL064N Numonyx M29W640GS hardware protection of S29GL064N Numonyx software and application Spansion Flash M29W640GT SPANSION 16
Contextual Info: Migrating to Spansion S29GL-N from Numonyx M29W 32-64 Mb Application Note 1. Introduction This Application Note details how to migrate designs from Numonyx™ 32 Mbit M29W320E and 64 Mbit M29W640G Flash Memory devices to Spansion® 32 Mbit S29GL032N and 64 Mbit S29GL064N MirrorBit®

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

sa1, NXB

Abstract: PL032J SA182 SA276 SA-194 Pl064j SA178 SA1127 SA216 SA284
Contextual Info: S29PL-J 128 / 128 / 64 / 32M ビット（8 / 8 / 4 / 2M x 16 - ビット） CMOS 3.0 V 単一電源， - リード / ライト同時実行， Enhanced VersatileIO 制御 TM フラッシュメモリ S29PL-J Cover Sheet データシート Advance Information

M29DW256G

Abstract: M29dw256 spansion TSOP56
Contextual Info: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) „ Asynchronous random/page read

Contextual Info: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) „ Asynchronous random/page read

m29dw128g

Contextual Info: M29DW128G 128 Mbit 8 Mb x 16, multiple bank, page, dual boot 3 V supply Flash memory Features • Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) ■ Asynchronous random/page read

M29DW128G

Abstract: 55560A B030A
Contextual Info: 128Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW128G Features • Common flash interface – 64-bit security code • 100,000 program/erase cycles per block • Low power consumption – Standby and automatic standby

M29DW128G

Abstract: TSOP56 2202H 40XAD
Contextual Info: M29DW128G 128-Mbit 8 Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features • Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) ■ Asynchronous random/page read

SANDISK NAND ID code

Contextual Info: C/ FS TM The Embedded File System User’s Manual V4.04 Micriμm 1290 Weston Road, Suite 306 Weston, FL 33326 USA www.micrium.com Designations used by companies to distinguish their products are often claimed as trademarks. In all instances where Micriμm Press is aware of a trademark claim, the product

M29dw127

Contextual Info: M29DW127G 128-Mbit 8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

M29DW127G

Abstract: M29DW M29dw127
Contextual Info: M29DW127G 128-Mbit 8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

M29DW256

Abstract: 0C60000 06FFFFF 013F 099FFFF
Contextual Info: 256Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory Features • VPP/WP# pin for fast program and write – Protects the four outermost parameter blocks

M29W128GL

Abstract: M29W128GH
Contextual Info: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features • ■ Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

M29W128GL

Abstract: M29W128GH70 M29W128G M29W128GL7
Contextual Info: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

M29DW127G

Contextual Info: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

M29W256GH

Abstract: m29w256gh70 M29W256GL M29W256GH70N M29W256G M29W256 Q001 M29DW127G 70n6 0A50000
Contextual Info: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

M29W256GH

Abstract: M29W256G m29w256gl M29W256 M29W m29w256gh70
Contextual Info: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

m29w256g

Abstract: M29W256GL M29W256 M29W256GH70N M29W256GH
Contextual Info: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

M29W128GL7

Abstract: M29W128GL 2221h
Contextual Info: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

10C0000

Contextual Info: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178