Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SPICE MODEL GERMANIUM DIODE Search Results

    SPICE MODEL GERMANIUM DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    SPICE MODEL GERMANIUM DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    spice germanium diode

    Abstract: 1n4000 DIODE 1N4000 silicon diodes pn junction diode germanium rectifier diode transient suppressor spice model MicroNote 1n4000 sERIES DIODES 1N4000 low leakage diodes spice
    Contextual Info: Spring/Summer 1998 MicroNote Series 010 by Kent Walters, Microsemi Corporate Applications How to Quickly Obtain Spice Parameters for Diodes Component SPICE modeling has become a frequently used analysis tool by design engineers to evaluate circuit performance. This MicroNote


    Original     		PDF

    Contextual Info: BFP760 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.0, 2012-12-04 RF & Protection Devices Edition 2012-12-04 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFP760 thi-04 OT343 OT343-PO OT343-FP BFP760: OT323-TP PDF

    Contextual Info: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFP720F BFP720F: PDF

    Contextual Info: BFP720 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-19 RF & Protection Devices Edition 2012-10-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFP720 OT343 OT343-PO OT343-FP BFP720: OT323-TP PDF

    Contextual Info: BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFP650 OT343 OT343-PO OT343-FP BFP650: OT323-TP PDF

    Contextual Info: BFP720FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-16 RF & Protection Devices Edition 2012-10-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFP720FESD BFP720FESD: PDF

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Contextual Info: BFP740ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-08 RF & Protection Devices Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFP740ESD OT343 OT343-PO OT343-FP BFP740ESD: OT323-TP MARKING CODE T7s MARKINGCODET7s PDF

    Contextual Info: BFP740FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-11 RF & Protection Devices Edition 2012-10-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFP740FESD BFP740FESD: PDF

    Contextual Info: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP PDF

    Contextual Info: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFP640FESD BFP640FESD: PDF

    Contextual Info: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP PDF

    transistor c1013

    Abstract: K0107 transistor c1014 C1013 transistor k0207 transistor k0307 K0915 transistor K0816 8600E spice germanium diode
    Contextual Info: AND8077/D GigaComm SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform


    Original     		AND8077/D r14525 AND8077/D transistor c1013 K0107 transistor c1014 C1013 transistor k0207 transistor k0307 K0915 transistor K0816 8600E spice germanium diode PDF

    C1013 transistor

    Abstract: K0107 transistor c1013 transistor k0307 n15c it 8500e k0207 K0412 k0307 L05 diode
    Contextual Info: AND8077/D GigaComm SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform


    Original     		AND8077/D r14525 C1013 transistor K0107 transistor c1013 transistor k0307 n15c it 8500e k0207 K0412 k0307 L05 diode PDF

    Contextual Info: BFP840ESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP PDF

    Contextual Info: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR740L3RH PDF

    BFP840F

    Abstract: Germanium Transistor spice gummel LNA ku-band
    Contextual Info: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFP840FESD BFP840FESD: BFP840F Germanium Transistor spice gummel LNA ku-band PDF

    BFR840L3RHESD

    Abstract: Germanium Transistor LNA ku-band
    Contextual Info: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFR840L3RHESD BFR840L3RHESD: BFR840L3RHESD Germanium Transistor LNA ku-band PDF

    rf transistor frequency 10.0GHz gain 20 dB

    Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
    Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFR840L3RHESD BFR840L3RHESD: rf transistor frequency 10.0GHz gain 20 dB 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band PDF

    bfp840

    Abstract: LNA ku-band BFP840FESD BFP840F ku-band lnb simulation
    Contextual Info: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFP840FESD BFP840FESD: bfp840 LNA ku-band BFP840FESD BFP840F ku-band lnb simulation PDF

    Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR720L3RH PDF

    spice gummel

    Abstract: bfp840 Germanium Transistor LNA ku-band
    Contextual Info: BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP spice gummel bfp840 Germanium Transistor LNA ku-band PDF

    BFP840ESD

    Abstract: LNA ku-band bfp840 transistor RF S-parameters
    Contextual Info: BFP840ESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP BFP840ESD LNA ku-band bfp840 transistor RF S-parameters PDF

    BFP842

    Abstract: BFP842ESD
    Contextual Info: BFP842ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.0, 2012-08-03 RF & Protection Devices Edition 2012-08-03 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFP842ESD OT343 OT343-PO OT343-FP BFP842ESD: OT323-TP BFP842 BFP842ESD PDF

    Contextual Info: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR740L3RH PDF