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    SPW20 Search Results

    SPW20 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    XMSM0C1104SPW20R
    		Texas Instruments 24 MHz Arm® Cortex®-M0+ MCU with 16-KB flash, 1-KB SRAM, 12-bit ADC 20-TSSOP -40 to 125 Visit Texas Instruments

    SPW20 Datasheets (21)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPW201K0J
    		Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF 84.43KB 2
    SPW201K0K
    		Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF 84.43KB 2
    SPW201R0J
    		Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF 84.43KB 2
    SPW201R0K
    		Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF 84.43KB 2
    SPW20N60C2
    		Infineon Technologies Cool MOS Power Transistor Original PDF 123.82KB 11
    SPW20N60C2
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19Ohm, 20.0A Original PDF 148.26KB 12
    SPW20N60C3
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19, 20.0A Original PDF 155.82KB 13
    SPW20N60C3
    		Infineon Technologies Cool MOS Power Transistor Original PDF 260.67KB 12
    SPW20N60C3FKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 20.7A TO-247 Original PDF 828.88KB
    SPW20N60CFD
    		Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 220.0 mOhm; ID(max) @ TC=25°C: 20.7 A; IDpuls (max): 52.0 A; Original PDF 762.4KB 13
    SPW20N60CFD
    		Infineon Technologies Cool MOS Power Transistor Original PDF 162.95KB 12
    SPW20N60CFDFKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 20.7A TO-247 Original PDF 2.94MB
    SPW20N60S5
    		Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 20.0 A; IDpuls (max): 40.0 A; Original PDF 782.8KB 12
    SPW20N60S5
    		Infineon Technologies Cool MOS Power Transistor Original PDF 243.22KB 11
    SPW20N60S5
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19Ohm, 20.0A Original PDF 104.61KB 9
    SPW20N60S5
    		Infineon Technologies Cool MOS Power Transistor Original PDF 255.44KB 11
    SPW20N60S5
    		Siemens Cool MOS Power Transistor Original PDF 114.61KB 10
    SPW20N60S5
    		Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SPW20N60S5FKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO-247 Original PDF 769.34KB
    SPW20R10J
    		Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF 84.43KB 2

    SPW20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5 PDF

    transistor 20N60s5

    Abstract: SPW20N60S5
    Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5 PDF

    20n60cfd

    Contextual Info: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd PDF

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5 PDF

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Contextual Info: SPW20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original     		SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60 PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
    Contextual Info: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V PDF

    20N60CFD

    Abstract: SPW20N60CFD TP001
    Contextual Info: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 20N60CFD SPW20N60CFD TP001 PDF

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5 PDF

    20n60cfd

    Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
    Contextual Info: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF PDF

    20N60S5

    Contextual Info: SIEMENS SPW20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5 PDF

    20n60c2

    Abstract: SPW20N60C2 SDP06S60
    Contextual Info: SPW20N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated


    Original     		SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20n60c2 SPW20N60C2 SDP06S60 PDF

    20N60C2

    Abstract: SDP06S60 SPW20N60C2 TID10
    Contextual Info: SPW20N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20 A • Ultra low effective capacitances


    Original     		SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20N60C2 SDP06S60 SPW20N60C2 TID10 PDF

    20N60C3

    Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
    Contextual Info: SPW20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3 PDF

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF

    diode marking G36

    Abstract: SPW20N60C3 20N60C3 SPW20N60C3 20n60c3
    Contextual Info: SPW20N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 diode marking G36 SPW20N60C3 20N60C3 SPW20N60C3 20n60c3 PDF

    20N60S5 TO247

    Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
    Contextual Info: SPW20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 TO247 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent siemens 350 98 SPW20 20n60s PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60
    Contextual Info: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60 PDF

    20N60S5 TO247

    Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
    Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 009-134-A O-247 20N60S5 TO247 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values PDF

    20N60S5

    Abstract: 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s
    Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20N60S5 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s PDF

    SPW20N60S5

    Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5 PDF

    20n60c3

    Abstract: transistor 20N60c3 diode marking G36
    Contextual Info: SPW20N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 transistor 20N60c3 diode marking G36 PDF

    20n60s5

    Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3
    Contextual Info: SPW20N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A •=High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3 PDF

    20N60C2

    Abstract: SPW20N60C2 Q67040-S4321 SDP06S60
    Contextual Info: SPW20N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20 A • Ultra low effective capacitances


    Original     		SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20N60C2 SPW20N60C2 Q67040-S4321 SDP06S60 PDF