SQ 0765 Search Results

Contextual Info: LOW PROFILE u DIGITAL DELAY LINES 14 PIN PACKAGE TTL COMPATIBLE BTAPS•SINGLE•DUAL*TRIPLE FOR MILITARYAPPLICATIONS SERIES ST, SQ,SD AND 9P .165 MAX. W hite Dot locates Pin 1 O N L Y A C T IV E P IN S ARE SUPPLIED *— .15 M I N A va ila b le with .015 standoffs. Add suffix S to part number when ordering.

Contextual Info: AWI PART NUMBER NO. OF POSITIONS “A" "B” 5045-02-771 2 .306 .156 5045-06-771 S .930 .760 PTH REQUIREMENTS: • Drilled Hole Die. .0765 -:8S?1 • Plating: .0 0 1 /.0 0 3 Copper and .003 Min. Solder. • Finished Hole Die: .0 7 0 /.0 7 5 CONNECTOR FEATURES:

Contextual Info: BES TECHNOLOGY This UMS unique Schottky Diode process is space evaluated UMS is offering a unique MMIC Schottky Diode process in open foundry mode optimised for very high frequency applications up to several hundreds of GHz with a typical Ft of 3THz. Notably, BES is particularly suited to the emerging E-band market.

Contextual Info: PPH15X_10 TECHNOLOGY The new UMS 150nm GaAs power pHEMT process UMS is now pleased to extend its foundry offer with the introduction of a new 150nm GaAs Power pHEMT process. This process is optimised for wideband high power amplification up to 40GHz with a typical Ft of 65GHz

Contextual Info: PH10 TECHNOLOGY The new UMS 0.1µm GaAs Very High Frequency pHEMT Process UMS is now pleased to extend its foundry offer with the opening of 0.1µm High Frequency GaAs pHEMT process. PH10 process is optimised for low noise amplification up to 110GHz with a typical Ft of 130GHz, a power density

16ED10

Abstract: 16EC30 16EC10 16EC15 16EC20 16EC25
Contextual Info: HE D 3037ES7 OQOOMST ? | [; - ,/ F=f j |_ fi1Q O O P 11 - • DIGITAL DELAY LINES s c E e le c tr o n ic s co> i i IB PIN PACKAGE g TAPS • SINGLE • DUAL «TRIPLE SERIES 16EC, 1BEG.16ED AND 16EP + + 2 3 T +•1 + 4 + 5 + ó + 7 T ' * 7 - / 3 + 8 . 4C 40

Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time – 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time – 10 seconds Word-by-word Programming – 10 µs/Word Typical

Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time – 35 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time – 10 seconds Word-by-word Programming – 10 µs/Word Typical

AT49F1024

Abstract: AT27C1024 AT29C1024 AT49F1025
Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 55 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word By Word Programming - 10 µs/Word Typical

AT49F1024-45VC

Abstract: AT49F1025 atmel AT49F1024 AT49F1024
Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time – 35 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time – 10 seconds Word-by-word Programming – 10 µs/Word Typical

Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time – 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time – 10 seconds Word-by-word Programming – 10 µs/Word Typical

AT49F1025

Abstract: AT27C1024 AT29C1024 AT49F1024
Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word By Word Programming - 10 µs/Word Typical

AT49F1025

Abstract: AT27C1024 AT29C1024 AT49F1024 AT49F1024-55VI AT49F1025-50JC AT49F1025-45JC atmel AT49F1024
Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K Word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word-By-Word Programming - 10 µs/Word Typical

Decibel Products combiners

Abstract: DB224E W9500 U/25/20/TN26/15/Decibel Products Dipole antennas deciBel antenna DB224 DB212 DB228
Contextual Info: 3 ENGINEERING The information presented here primarily con­ cerns station antennas and filter products. Considerably more can be done at the station than with mobile antennas to influence system performance. In many systems there is only one station antenna serving a num­

ci 9933 b

Abstract: Ic 9148 1X27 1X34 SDES-99000-0003 SDA-90120
Contextual Info: 10 t. 5 = - = h - - h CKT S IZ E |o I x — : O jO O j Q 0.10J/.004 (g Y (2.54 ±S:Vo ) WAFER- I 57. GLASS F I L L E D POLYESTER TO UL 9 4 v - 0 . COLOUR • BLACK. -$-10 (0.25)/.010 IX 1 IX 2 IX 3 IX 4 IX 5 IX 6 IX 7 IX 8 IX 9 I X 10 I X 11 1X12 1X13

Contextual Info: Preliminary Technical Data 16-Bit, 10 MSPS, PulSAR Differential ADC AD7626 FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS High dynamic range telecommunications Receivers Digital imaging systems Digital X-RAY Digital MRI IR Cameras High speed data acquisition

WURTH 614 004 135 023

Abstract: AD7625 Pulsar AD7623 AD7643 AD7653 AD7667 AD7671 AD7677 AD7980
Contextual Info: 16-Bit, 6 MSPS, PulSAR Differential ADC AD7625 FUNCTIONAL BLOCK DIAGRAM Throughput: 6 MSPS SNR: 93 dB INL: ±0.45 LSB typical, ±1 LSB maximum DNL: ±0.3 LSB typical, ±0.5 LSB maximum Power dissipation: 135 mW 32-lead LFCSP 5 mm x 5 mm SAR architecture

Contextual Info: 16-Bit, 6 MSPS, PulSAR Differential ADC AD7625 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS High dynamic range telecommunications Receivers Digital imaging systems High speed data acquisition Spectrum analysis Test equipment REFIN REF VCM 1.2V

Contextual Info: 16-Bit, 6 MSPS, PulSAR Differential ADC AD7625 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS High dynamic range telecommunications Receivers Digital imaging systems High speed data acquisition Spectrum analysis Test equipment REFIN REF VCM 1.2V

power tmos

Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Contextual Info: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.

TO-225AA

Abstract: silicone 813 dow corning RCA THYRISTOR
Contextual Info: SECTION 8 RELIABILITY AND QUALITY Edited and Updated stable. However, for pulses in the microsecond and millisecond region, the use of steady–state values will not yield true power capability because the thermal response of the system has not been taken into account.

dc motor asa 300f

Abstract: 2-digit object counter circuit Simpson ammeter 3344AIXA relay 04501 asa 300f Datasheet-03/dc motor asa 300f 115v 400Hz output 12-pin 4 digits 7-segment led display Digital temperature controller with PT100 rtd
Contextual Info: C ustomers have counted on Simpson Electric Company to provide quality panel meters for over 70 years. From the analog meter used in Charles Lindbergh’s historic solo trans-Atlantic flight in 1927 to the digital controllers used to raise and lower stages at the 2004 MTV Video Music Awards VMAs show or

IEC-1268

Abstract: 12-pin 4 digits 7-segment led display 3344AIXA analog panel meter adjustable power supply 2 to 36 volt 5amp electronic passive components catalog Wiring Diagram Kwh meter digital asa 300f M135 M235
Contextual Info: C ustomers have counted on Simpson Electric Company to provide quality panel meters for over 70 years. From the analog meter used in Charles Lindbergh’s historic solo trans-Atlantic flight in 1927 to the digital controllers used to raise and lower stages at the 2004 MTV Video Music Awards VMAs show or

IGBT 60A spice model

Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
Contextual Info: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.