SQJ910AEP Search Results
SQJ910AEP Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQJ910AEP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 30V POWERPAK SO8 | Original | 193.45KB | |||
SQJ910AEP-T1_BE3 | Vishay Siliconix | DUAL N-CHANNEL 30-V (D-S) 175C M | Original | 192.21KB | 11 | ||
SQJ910AEP-T2_GE3 | Vishay Siliconix | DUAL N-CHANNEL 30-V (D-S) 175C M | Original | 192.21KB |
SQJ910AEP Price and Stock
Vishay Siliconix SQJ910AEP-T1_GE3MOSFET 2N-CH 30V 30A PPAK SO8 |
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SQJ910AEP-T1_GE3 | Cut Tape | 5,920 | 1 |
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Vishay Siliconix SQJ910AEP-T1_BE3MOSFET 2N-CH 30V 30A PPAK SO8 |
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SQJ910AEP-T1_BE3 | Cut Tape | 2,952 | 1 |
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Vishay Siliconix SQJ910AEP-T2_GE3MOSFET 2N-CH 30V 30A PPAK SO8 |
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SQJ910AEP-T2_GE3 | Reel | 3,000 |
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Vishay Intertechnologies SQJ910AEP-T1_BE3Transistor MOSFET Array Dual N-Channel 30V 30A 8-Pin PowerPAK SO - Tape and Reel (Alt: SQJ910AEP-T1_BE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ910AEP-T1_BE3 | Reel | 18 Weeks | 3,000 |
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SQJ910AEP-T1_BE3 | 3,000 |
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Vishay Intertechnologies SQJ910AEP-T1_GE3Transistor MOSFET Array Dual N-CH 30V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ910AEP-T1_GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ910AEP-T1_GE3 | Reel | 20 Weeks | 3,000 |
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SQJ910AEP-T1_GE3 | 2,745 |
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SQJ910AEP-T1_GE3 | Cut Tape | 11,060 | 1 |
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SQJ910AEP-T1_GE3 | Reel | 108,000 | 3,000 |
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SQJ910AEP-T1_GE3 | 21 Weeks | 3,000 |
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SQJ910AEP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SQJ910AEP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SQJ910AEP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ910AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.007 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0086 |
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SQJ910AEP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ910AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.007 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0086 |
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SQJ910AEP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ910AEP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQJ910AEP AN609, 4283m 4192u 2484m 4377m 0537m 9362m 5220u 21-Jun-13 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
SQJ469ep
Abstract: SQ4483BE
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AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 |