SRAM 16KX8 Search Results

sram 16kx8

Contextual Info: SM364SCSM83UI15 January 1997 Rev 1 SMART Modular Technologies SM364SCSM83UI15 512KByte 64Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364SCSM83UI15 is a high performance, 512 Kilobyte synchronous secondary cache SRAM module for

16kx8 static ram ttl

Abstract: sram 16kx8 TIO8
Contextual Info: SM364SCSMB3UI15 February 1997 Rev 0 SMART Modular Technologies SM364SCSMB3UI15 512KByte 64Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364SCSMB3UI15 is a high performance, 512 Kilobyte synchronous secondary cache SRAM module for

smart modular sram

Abstract: cwe4 umc chipset 64kx64 16kx8 static ram ttl
Contextual Info: SM364SCSP83UI15 August 1996 Rev 1C SMART Modular Technologies SM364SCSP83UI15 512KByte 64Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364SCSP83UI15 is a high performance, 512 Kilobyte synchronous secondary cache SRAM module for

IC1210-m128LQ

Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Contextual Info: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are

sram 16kx8

Contextual Info: P U M A 11 Issue 1.1: October 1988 molate ADVANCED PRODUCT INFORMATION Mosaic Sem iconductor Inc Pinned Uncommited Memory Array Pin Definition Features PGA allowing ASIC combinations of SRAM, EEPROM and UV EPROM Maximum total memory size of 128k x 8 SRAM/EEPROM

6116 RAM

Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
Contextual Info: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns

Contextual Info: ^ n n i i y U I^ IV DPS129 Dense-Pac Microsystems, Inc. 0 16K X 8 CM OS SRAM M ODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS129 is a 16K X 8 Static Random Access Memory SRAM module using 8 CM OS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry

Contextual Info: DPS88H16 Dense-Pac Microsystems, Inc. O 16K X 8 C M O S SRAM M O D U LE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS88H16 is a 16K X 8 SRAM module built with eight 4K X 8 CMOS SRAMs in ceramic LCC packages suface mounted on a 28-pin, 0.600" wide Co-Fired DIP

DPRAM

Abstract: 256K DPRAM 16Kx8 sram 16kx8 64Kx8 100TQFP AL5DS9069V AL5DS9079V 32Kx16 AL5DS9099V
Contextual Info: DPRAM Design Methodology AverLogic Technologies Corp. Synchronous Dual-Port SRAM AL5DS9xx9V Selection Guide Device AL5DS9xxxV Configuration Density #bits AL5DS9069V 16Kx8 128K AL5DS9079V 32Kx8 256K AL5DS9089V 64Kx8 512K AL5DS9099V 128Kx8 1M AL5DS9159V 8Kx9

CYC199

Abstract: sram cross reference CYPRESS SAMSUNG CROSS REFERENCE W24257AK Cypress CROSS 9042 issi w2425 IS1C64AH idt cross reference
Contextual Info: High Speed SRAM Cross Reference Guide Part No. Density bits Org. Voltage Access Pins Time (ns) (bits) Package W2465AJ 64K 8Kx8 5V 12 28 J:SOJ W24129AJ W24L257AJ,Q 128K 256K 16Kx8 32Kx8 5V 3.3V 12 12, 15 28 28 J:SOJ J:SOJ/Q:STSOP W24257AK,J,Q,S 256K 32Kx8

Contextual Info: PRELIMINARY PDM4M6214 PDM4M6215 PDM4M6216 PDM4M6217 PARADIGM' 256KB and 512KB Second Level Cache Modules for Systems Using the Intel Pentium CPU and the OPTi Viper Chipset Features: PDM4M6215 use Paradigm's PDM31256 32K x 8 SRAM and FCT logic. The PDM4M6216 and

7142LA25L48B

Abstract: 7164L20 4Kx8 sram ttl 5962-8861011UA 7206l20l 5962-8855206YA 5962-8855206 5962-8953604 54FCT244AT 5962-8855206XA
Contextual Info: IDT Military Offerings FIFO Military Offerings Logic Military Offerings Multi-Port Military Offerings SRAM Military Offerings May 2005 FIFO Military Offerings FIFO Military Selector Guide by Part Number FIFO Military Selector Guide (by SMD Number) Obsolete Part List and Replacement Guide

16KX8

Abstract: 64KX32 GS81132Q GSM14P256KB-I66 GSM14P512KB-I66
Contextual Info: GSM14P256KB-I66 GSM14P512KB-I66 GSI TECHNOLOGY GSM14P256KB-I66 GSM14P512KB-I66 256KB / 512KB Modules COASt 1.4 Specification Features Functional Description cont’d • • • • The GSM14P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single

16KX8

Abstract: TAG 106 D 64KX32 GS81132Q GSM31P256KB-I66 GSM31P512KB-I66 SRAM 16k*8
Contextual Info: GSM31P256KB-I66 GSM31P512KB-I66 GSI TECHNOLOGY GSM31P256KB-I66 GSM31P512KB-I66 256KB / 512KB Modules COASt 3.1 Specification Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM18L08

Abstract: FM20L08 FM20L08-60-TGC FM20L08-60
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

TCA 290

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

ht93c46

Abstract: HT80232 93C46 SOCKET coupling transformer ethernet tp-link 10MHZ NE2000 MAR6
Contextual Info: HT80232 Ethernet Controller/PCI ECON-PCI Features • • • • • • • Single chip Ethernet controller for PCI bus interface Register compatible with NE2000 External 15ns access time SRAM for data transfer Integrated 10BaseT TP interface – Smart squelch circuit with programmable

10MHZ

Abstract: HT80232 NE2000 HT93C46
Contextual Info: HT80232 Preliminary Ethernet Controller/PCI ECON-PCI Features • • • • • • Single chip Ethernet controller for PCI bus interface Register compatible with NE2000 External 15ns access time SRAM for data transfer Integrated 10BaseT TP interface – Smart squelch circuit with programmable

ht93c46

Abstract: HT80232 MA10 MA11 MA12 MA13 NE2000
Contextual Info: HOLTEK r r HT80232 Ethernet Controller/PCI ECON-PCI Features • • • • • • Single chip Ethernet controller for PCI bus interface Register compatible with NE2000 External 15ns access time SRAM for data transfer Integrated lOBaseT TP interface - Sm art squelch circuit with programmable

4kx16 sram

Contextual Info: 4KX4 BASED Dense-Pac Microsystems, Inc. CMOS SRAM FAMILY - DIPS D E S C R IP T IO N : DPS88H04 The4KX4 Based Family ¡s part of a new line of high speed static RAM modules developed by Dense-Pac Microsys­ tems, Inc. This family uses advanced packaging concepts

SECDED

Abstract: EP3SE50
Contextual Info: 4. TriMatrix Embedded Memory Blocks in Stratix III Devices SIII51004-1.8 Introduction TriMatrix embedded memory blocks provide three different sizes of embedded SRAM to efficiently address the needs of Stratix III FPGA designs. TriMatrix memory includes 640- in ROM mode only or 320-bit memory logic array blocks (MLABs),

Contextual Info: DPS88H16 16K X 8 C M O S S R AM M O D U L E NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS88H 16 is a 16K X 8 SRAM m odule b u ilt w ith eight 4K X 8 C M O S SRAMs in ceram ic LCC packages suface m ounted on a 28-pin, 0.600" w id e Co-Fired DIP substrate. The m em ory utilizes asyncronous circuitry