Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SRAM 256KX16 Search Results

    SRAM 256KX16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy

    SRAM 256KX16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SRAM AS8S128K32 128K x 32 SRAM GENERAL 21, 28, 39 are no connects PN 66 DESCRIPTION Lead PGA- Pins 8, SRAM MEMORY ARRAY The AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low


    Original     		PDF AS8S128K32 AS8S128K32 128Kx32-bits 256Kx16 512Kx8.

    MR2A16A

    Abstract: MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil
    Text: MR2A16A 256Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


    Original     		PDF MR2A16A 256Kx16 20-years 44-TSOP 48-BGA MR2A16A MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History History Draft Data Remark 0.0 Initial draft February 4,1997 Preliminary 0.1 Revised - Change datasheet format


    Original     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA 25/Typ. 32/Typ. 55/Typ.

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The


    Original     		PDF HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A 256Kx16bit HY62UF16401A HY62QF16401A HY62EF16401A 16bits.

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The


    Original     		PDF HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A 256Kx16bit HY62UF16400A HY62QF16400A HY62EF16400A 16bits.

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400 / HY62QF16400 / HY62EF16400 / HY62SF16400 is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The


    Original     		PDF HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 256Kx16bit HY62UF16400 HY62QF16400 HY62EF16400 16bits.

    making A10

    Abstract: No abstract text available
    Text: L-51001-0E MITSUBISHI ELECTRIC Mitsubishi Fast SRAM Technical Direction Large Capacity 1M 4M Low Power Vcc 5V High Speed Fast SRAM Multi Bit x1, x4 x8 x16 0.25um CMOS Special Wide Temperature Version Fast SRAM 0.4um Super CMOS 3.3V Return to Contents L-51008-0D


    Original     		PDF L-51001-0E L-51008-0D L-51010-0C 25ical, making A10

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02


    Original     		PDF HY62UF16406D 256Kx16bit HYUF6406D

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002


    Original     		PDF HY62UF16404E 256Kx16bit HYUF6404E

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)


    Original     		PDF 512Kx40-SOP 3DSR20M40VS6507 512Kx40, 256Kx16 100Krad 110MeV 100nF MMXX00000000XXX 3DFP-0507-REV

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002


    Original     		PDF HY62UF16404E 256Kx16bit 16bits. HYUF6404E

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02


    Original     		PDF HY62LF16404D 256Kx16bit HYQF6404D

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02


    Original     		PDF HY62UF16404D 256Kx16bit HYUF6404D

    marking TACS

    Abstract: No abstract text available
    Text: HY62UF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002


    Original     		PDF HY62UF16406E 256Kx16bit 16bits. HYUF6406E marking TACS

    EDI816256CA

    Abstract: No abstract text available
    Text: EDI816256CA-RP HI-RELIABILITY PRODUCT 256Kx16 PLASTIC MONOLITHIC SRAM FEATURES The EDI816256CA is a ruggedized plastic 256Kx16 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability


    Original     		PDF EDI816256CA-RP 256Kx16 EDI816256CA 256Kx16 MIL-STD-883

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    Untitled

    Abstract: No abstract text available
    Text: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,


    OCR Scan     		PDF EDI9F3420C 128Kx16 32Kx16 120ns 150ns EDI9F3420C

    A934

    Abstract: No abstract text available
    Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,


    OCR Scan     		PDF EDI9F3420C 128Kx16 32Kx16 120ns 150ns EDI9F3420C A934

    3D SR16M32VS4500

    Abstract: Enplas OTS
    Text: -pjusn MEMORY MODULE SRam 512Kx32-SOP 3D SR16M32VS4500 a HEICO com pany Static Ram MODULE 16Mbit SRam organized as 512Kx32, based on 256Kx16 Features_ - Fast Access Time : 12, 15, 20ns. - Single + 3.3V ± 0.3V power supply.


    OCR Scan     		PDF 512Kx32-SOP SR16M32VS4500 16Mbit 512Kx32, 256Kx16 180mA 3DFP-0500-REV 3D SR16M32VS4500 Enplas OTS

    256Kx16bit

    Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V


    OCR Scan     		PDF GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4th 1997 Preliminary 0.1 Revised - Change datasheet format


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA 55ATyp. 32ATyp 25ATyp

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Tills 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet form at


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA