SRAM 512KX8 Search Results

AS5C4008DJ

Contextual Info: AS5C4008DJ 512Kx 8 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 512Kx8 SRAM ULTRA HIGH SPEED-PLASTIC SRAM REVOLUTIONARY PINOUT M IL IT A R Y TEMPERATURE OPERATING RANGE-55°C to +125°C PIN ASSIGNMENT Top View 36-Pin PSOJ FEATURES • Ultra High Speed, 83MHz Asynchronous Operation

Contextual Info: SRAM AS8S128K32 128K x 32 SRAM GENERAL 21, 28, 39 are no connects PN 66 DESCRIPTION Lead PGA- Pins 8, SRAM MEMORY ARRAY The AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low

Contextual Info: A Ç l AUSTIN SEM ICONDUCTOR, INC. SRAM AS5C512K8 512KX8SRAM 512K X 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View) 36-Pin SO J/LC C SMD 5962-95600 MIL-STD-883 FEATURES Ultra High Speed Asynchronous Operation

68S16000

Abstract: AB-020
Contextual Info: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

256Kx16bit

Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V

Contextual Info: White Electronic Designs WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION „ 512Kx24 bit CMOS Static „ Random Access Memory Array The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer

Contextual Info: BENCHMARQ_ bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power >- Automatic write-protection during power-up/power-down cycles >• Industry-standard 32-pin 512K x 8 pinout >- Conventional SRAM operation;

2048x2048

Contextual Info: HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 Series 512Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8400 / HY62QF8400 / HY62EF8400 / HY62SF8400 is a high speed and super low power 4Mbit full CMOS SRAM organized as 524,288 words by 8 bits. The HY62UF8400 /

EDI88512

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG White Electronic Designs 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability

smd code F18

Contextual Info: ACT–SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM • Access Times of 25ns SRAM and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash)

making A10

Contextual Info: L-51001-0E MITSUBISHI ELECTRIC Mitsubishi Fast SRAM Technical Direction Large Capacity 1M 4M Low Power Vcc 5V High Speed Fast SRAM Multi Bit x1, x4 x8 x16 0.25um CMOS Special Wide Temperature Version Fast SRAM 0.4um Super CMOS 3.3V Return to Contents L-51008-0D

VDR 0047

Contextual Info: HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.26.2000

Contextual Info: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary

VDR 0047

Contextual Info: HY62V8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Revision History Insert Revised - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.06.2000 Final 04 Revised

MR2A08A

Abstract: MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08
Contextual Info: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

Contextual Info: MR2A08A 512K x 8 MRAM Memory FEATURES • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

AEC-Q100

Abstract: MR2A08A MR2A08AYS35
Contextual Info: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

DPS512X8MKN3

Contextual Info: 512Kx8, 20 - 45ns, STACK/DIP 30A129-11 D 4 Megabit High Speed CMOS SRAM DPS512X8MKN3 PRELIMINARY DESCRIPTION: The DPS512X8MKN3 High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable

EDI88512

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG White Electronic Designs 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability

MR2A08AMYS35

Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
Contextual Info: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.

EPROM retention

Abstract: BLF 272 bq4842 bq4852Y BQ4852YMC-85
Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with