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    SRAM 6264 Search Results

    SRAM 6264 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    SRAM 6264 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    89C1632

    Abstract: No abstract text available
    Text: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture


    Original     		PDF 89C1632 32-Bit) 101MeV-cm2/mg 68-pin 89C1632

    89C1632

    Abstract: 512K x 8 bit sram 32 pin
    Text: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture


    Original     		PDF 89C1632 32-Bit) 101MeV-cm2/mg 68-pin 89C1632 512K x 8 bit sram 32 pin

    89C1632

    Abstract: SRAM 6264 6264 SRAM
    Text: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture


    Original     		PDF 89C1632 32-Bit) 68-pin 89C1632 SRAM 6264 6264 SRAM

    SRAM 6264

    Abstract: all data sheet 89LV1632
    Text: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:


    Original     		PDF 89LV1632 32-Bit) 101MeV-cm2/mg 68-pin 32-Bit 89LV1632 SRAM 6264 all data sheet

    Untitled

    Abstract: No abstract text available
    Text: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground 89LV1632 MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:


    Original     		PDF 89LV1632 32-Bit) 101MeV-cm2/mg 68-pin 89LV1632 at-55

    Untitled

    Abstract: No abstract text available
    Text: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:


    Original     		PDF 89LV1632 32-Bit) 101MeV-cm2/mg 68-pin 89LV1632 at-55

    Untitled

    Abstract: No abstract text available
    Text: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground 89LV1632 MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:


    Original     		PDF 89LV1632 32-Bit) 101MeV-cm2/mg 68-pin 89LV1632 at-55Â

    Untitled

    Abstract: No abstract text available
    Text: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:


    Original     		PDF 89LV1632 32-Bit) 101MeV-cm2/mg 68-pin 89LV1632

    external RAM ic 6264

    Abstract: 6264 EPROM
    Text: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.


    Original     		PDF CY9C6264 CY6264 64-bytes CY9C6264 external RAM ic 6264 6264 EPROM

    PIC24Hj Family Reference Manual

    Abstract: DS70207 serial number of internet manager DS70194 PIC24HJ128GP310 DS70288 DS70198 PIC24HJ256 DS70209 DS70195
    Text: PIC24HJXXXGPX06A/X08A/X10A 16-bit Microcontrollers up to 256 KB Flash and 16 KB SRAM with Advanced Analog Operating Conditions Communication Interfaces • 3.0V to 3.6V, -40ºC to +150ºC, DC to 20 MIPS • 3.0V to 3.6V, -40ºC to +125ºC, DC to 40 MIPS


    Original     		PDF PIC24HJXXXGPX06A/X08A/X10A 16-bit PIC24H Programmabl78-366 DS70592D-page PIC24Hj Family Reference Manual DS70207 serial number of internet manager DS70194 PIC24HJ128GP310 DS70288 DS70198 PIC24HJ256 DS70209 DS70195

    SRAM 6264 application note

    Abstract: No abstract text available
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


    Original     		PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, SRAM 6264 application note

    6264 SRAM

    Abstract: SRAM 6264 AS6C6264 6264 28pin AS6C6264-55PCN AS6C6264-55SCN
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


    Original     		PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, 6264 SRAM SRAM 6264 6264 28pin AS6C6264-55PCN AS6C6264-55SCN

    Untitled

    Abstract: No abstract text available
    Text: PIC24HJXXXGPX06A/X08A/X10A 16-bit Microcontrollers up to 256 KB Flash and 16 KB SRAM with Advanced Analog Operating Conditions Communication Interfaces • 3.0V to 3.6V, -40ºC to +150ºC, DC to 20 MIPS • 3.0V to 3.6V, -40ºC to +125ºC, DC to 40 MIPS


    Original     		PDF PIC24HJXXXGPX06A/X08A/X10A 16-bit PIC24H DS70592D-page

    AS6C6264

    Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


    Original     		PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, 6264 SRAM AS6C6264-55PCN SRAM 6264

    6264 SRAM

    Abstract: SRAM 6264
    Text: UALON MICROELECTRONICS 2ME D HM6116 2K X 8 SRAM m M S T a o m DQJOOSB a T~ ‘•Rp ~3.3-l3~. H M 6264/L 8K 8 SRAM X M Features Features * High speed - 70/100/120 ns MAX. * Low Power dissipation: 250mW ( Ty p .) Operating. 5 /tW ( Ty p .) Standby. * Single 5V power supply.


    OCR Scan     		PDF HM6116 6264/L 250mW HM6264: 300mW 100/tW HM6264/L: 275mW 50/tW 6264 SRAM SRAM 6264

    Untitled

    Abstract: No abstract text available
    Text: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6264A-I 1DB02-11-MAY94 4b75Gflfl 00Q3b HY6264ALP-I HY6264ALLP-I HY6264AU-I

    Untitled

    Abstract: No abstract text available
    Text: ÜMC U M 6264A Series 8K x 8 CMOS SRAM PRELIMINARY Features • S ingle+ 5 v o lt power supply ■ Access times: 100/120 ns m ax. 1 ■ F u lly static operation, no clock or refreshing required ■ D ire ctly T T L com patible: A ll inputs and outputs ■ Current:


    OCR Scan     		PDF 6264AM

    m6264

    Abstract: Truth Table 7483 SOP-28L UM6264-10 UM6264 UNITED MICROELECTRONICS CORPORATION UM6264-12L um6264-12 UM6264K-10L
    Text: 2ûS-l% ^ UM 6264 Seríes 8KX 8 CMOS SRAM Lu-f ¿ » a f e ^ - a i Features • ■ ■ ■ ■ ■ Single + 5 v o lt pow er supply Access times: 7 0 /1 0 0 /1 2 0 ns m ax. Current: Standard version: O perating: 9 0 m A (m ax.)


    OCR Scan     		PDF UM6264 100fiA UM6264-70/10/12 UM6264-70L/10L/12L UM6264-70T/10T/12T M6264-7 0LT/10 LT/12 version15-2455, SM9005V4 m6264 Truth Table 7483 SOP-28L UM6264-10 UNITED MICROELECTRONICS CORPORATION UM6264-12L um6264-12 UM6264K-10L

    UM6264D-70LL

    Abstract: UM6264D UM6264D-70L UM6264DM M6264 UM6264DM-70L UM6264DM70LL um6264dm-70ll SKINNY28L AO10L
    Text: UD/l6264D Series 8 K X 8 CMOS SRAM PRELIMINARY Features • Full static operation, no clock or refreshing required ■ Comm on I/O using three-state output ■ Output enable and tw o chip enable inputs for easy application ■ Data retention voltage: 2V min.


    OCR Scan     		PDF /l6264D 28-pin UM6264D 536-bit UM6264DK-55LL UM6264DV-55L UM6264DV-55LL UM6264DVR-55L UM6264DVR-55LL UM6264D-70LL UM6264D-70L UM6264DM M6264 UM6264DM-70L UM6264DM70LL um6264dm-70ll SKINNY28L AO10L

    MS6264CLL-10

    Abstract: MS6264CL-10 MS6264CLL-15 VDR 0047 MS6264CLL-80 ms6264cll MS6264C-80 MS6264CL-80 ZE10 ms6264cl-15
    Text: MOSEL MS6264C 8K x 8 Low Power CMOS SRAM FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The MOSEL MS6264C is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The device supports easy memory expansion with both an


    OCR Scan     		PDF MS6264C MS6264CL MS6264CLL MS6264C MS6264C-B0PC P28-4 MS6264C-80NC P28-5 MS6264CLL-10 MS6264CL-10 MS6264CLL-15 VDR 0047 MS6264CLL-80 ms6264cll MS6264C-80 MS6264CL-80 ZE10 ms6264cl-15

    intel 29F

    Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
    Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256


    OCR Scan     		PDF 628127H T7164 712S6 DT71Q08 1S61C64AH LS61C2S6AH IS61LV3216 S61C512 IS61C64 S61LV256 intel 29F T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568

    Untitled

    Abstract: No abstract text available
    Text: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 55mW/MHz (max.) • Single 5V ± 10% Power Supply


    OCR Scan     		PDF KM6264B/KM6264BL/KM6264BL-L 55mW/MHz KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit

    hm2007

    Abstract: 6264 SRAM HM2007L HM2007P aT64K3 circuit diagram of speech recognition voice recognition system hm-2007 circuit diagram of voice recognition TEMA
    Text: GEN ERA L D ESCRIPTION HM2007 is a single chip CMOS voicc recognition LSI circuit with the on-chip analog front end, voice analysis, recognition process and system control functions. A 40 isolated-word voice recognition system can be composed o f external microphone, keyboard. 64K SRAM and some


    OCR Scan     		PDF HM2007 aT64K3 6264 SRAM HM2007L HM2007P circuit diagram of speech recognition voice recognition system hm-2007 circuit diagram of voice recognition TEMA

    KM6264BL-10L

    Abstract: 6264bl km6264 6264 SRAM
    Text: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		PDF KM6264BÃ KM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L KM6264BLVBL-L KM6264BL-10L 6264bl km6264 6264 SRAM