SRAM 64KX16 Search Results

A15A

Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
Contextual Info: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access

MR0A16A

Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Contextual Info: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

SM-1994

Abstract: A2000V
Contextual Info: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The

256Kx16bit

Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V

SM-1994

Contextual Info: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology

Contextual Info: Preliminary CMOS SRAM KM616FS1000Z, KM616FR1000Z Family Document Title 64Kx16 SUper Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized

Contextual Info: HY62QF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62QF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100C uses high performance full CMOS process technology

A15A

Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Contextual Info: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x

Contextual Info: HY62SF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100C uses high performance full CMOS process technology

Contextual Info: Preliminary CMOS SRAM KM616FS2000Z, KM616FR2000Z Family 64Kx16bit Super Low Power and Low Voltage Full CMOS SRAM with 4S-CSP Chip Scale Package FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm Full CMOS The KM616FS2OO0Z and KM616FR20Q0Z fam ily are fabri­

Contextual Info: White Electronic Designs EDI8L21665V 2x64Kx16 SRAM FEATURES DSP Memory Solution The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.

Contextual Info: KM716V689 64Kx16 Synchronous SRAM 64K X 16-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM716V689 is a 1,048,576-bit Synchronous Static • 2 Stage Pipelined operation with 4 Burst Random • On-Chip Address Counter.

ic tba 810

Contextual Info: KM616FS1010Z, KM616FR1010Z Family Preliminary CMOS SRAM Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997 Preliminary

Contextual Info: HY62SF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16101C uses high performance full CMOS process technology

Contextual Info: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

JEDECMO-151

Abstract: A15B
Contextual Info: ^EDI EDI8L21664V h ELECTRONIC DESIGNS, INC 2xS4Kx1SSRAM TMS320C54X External SRAM Memory Solution Features The E D I8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith tw o 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x

SRAM 64Kx16

Contextual Info: Preliminary KM616V1OOOBLI / Ll-L CMOS SRAM 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C The KM616V1000BLI/LI-L is a 1,048,576-bit high • Fast Access Time : 70, 100 ns max.

SM-1994

Abstract: HY62UF16101C
Contextual Info: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

A15B

Abstract: A15A EDI8L21664V MO-151
Contextual Info: EDI8L21664V TMS320C54x External SRAM Memory Solution FEATURES DESCRIPTION n DSP Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.

KM616FS1010

Contextual Info: Preliminary CMOS SRAM KM616FS1010Z, KM616FR1010Z Family Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision History Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997

7133 A-1

Abstract: AN-91 IDT7024 8K RAM 71421
Contextual Info: THE MOST COMMONLY ASKED QUESTIONS ABOUT ASYNCHRONOUS DUAL-PORT SRAMS APPLICATION NOTE AN-91 By Mark Baumann and Cheryl Brennan What is a dual-port SRAM? A dual -port SRAM is exactly what it sounds like. It is a single static SRAM array accessed by two sets of address, data, and control signals.

CMOS 4091

Abstract: HY62SF16101C
Contextual Info: HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW