SS31 Search Results

Contextual Info: TO SHIBA SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

AM690

Abstract: SS316 4-20ma
Contextual Info: AM69 系列压力变送器 AM69 系列压力变送器由压力传感器和信号转换电路壳体及过程连接件组成。压 力传感器由灌充液实现压敏元件和 SS316 不锈钢膜片之间的压力传递。敏感元件的 微小位移改变传感器的输出，通过转换电路转换成 4～20mA 或 1～5V 标准信号。

Contextual Info: TO SHIBA SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm .1 . 2 +0.2 5 - 0. IL iM O -H in CM Nr— Nh i M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current

Contextual Info: SS314 TO SHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5H (Typ.) +0.2 1.2 5 - 0. IL SYMBOL Vr

Contextual Info: TOSHIBA SS311 1 SS31 1 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V : trr = 1.5/ j s

Contextual Info: SS32 THRU SS310 肖特基二极管 Schottky Rectifier •特征 ■外形尺寸和印记 Features ● Io 3.0A ● VRRM 20V-100V ● 耐正向浪涌电流能力高 High surge current capability ● 封装：模压塑料 Cases: Molded plastic ■用途 Outline Dimensions and Mark

SS310-G

Abstract: SS360 SS34 smc SS340 SS32-G SS34-G SS36-G S3 smc SS320
Contextual Info: SMD Schottky Barrier Rectifier SS32-G THRU SS310-G Forward Current: 3.0 Amp Reverse Votlage: 20 ~ 100 Volts Features Ideal for surface mount applications Easy pick and place Plastic packages has Underwriters lab. Flammability classification 94V-0 Built-in strain relief

Contextual Info: SS32T Thru SS310T SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 100 Volts FORWARD CURRENT - 3.0 Amps SOD-123T FEATURES • • • • • • • Low profile package in order to optimize board space Low power losses, high efficiency High current & High surge capability

1SS314

Contextual Info: SS314 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 4 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.50 (Typ.) 0 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SMB Package Weight mg 93 Product Group Type No. SK12 – SK1200 MBRS230L – MBRS2100L SK22 – SK2200 SS22 – SS210 SR32 – SR3200 SS32 – SS310 SR52 – SR5200 ER1A – ER1J

SS34 smc

Abstract: SS310 SS32
Contextual Info: SS32 THRU SS310 3.0 AMPS. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 3.0 Amperes SMC/DO-214AB Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place

SS310A

Abstract: SS32A SS32B SS33B SS34A SS34B SS35B SS36B SS35B-SS36B
Contextual Info: SS32B thru SS310B SURFACE MOUNT REVERSE VOLTAGE - 20 to100 Volts SCHOTTKY BARRIER RECTIFIERS FORWARD CURRENT - 3.0 Amperes FEATURES SMB ●For surface mounted applications ●Metal-Semiconductor junction with guarding ●Epitaxial construction ●Very low forward votage drop

SS310

Abstract: SS32 SS33 SS34 SS35 SS36 SS38
Contextual Info: SS32 thru SS310 SURFACE MOUNT REVERSE VOLTAGE - 20 to 100 Volts SCHOTTKY BARRIER RECTIFIERS FORWARD CURRENT - 3.0 Amperes FEATURES SMC ●For surface mounted applications ●Metal-Semiconductor junction with guarding ●Epitaxial construction ●Very low forward votage drop

Schottky

Contextual Info: SS34L thru SS310L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

DIODE SS34

Abstract: 0FM36 SS34 smc SS32 SS33 SS34 SS35 SS36 SS38 WEJ Electronic diodes
Contextual Info: SS32-SS310 Chip Schottky Barrier Diodes SMC Silicon epitaxial planer type 0.276 7.0 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.152(3.8)

Commital CONTACT

Abstract: ITS4100 S3100 UNI4883
Contextual Info: Series ITS ITS 31030 A BR and ITS 41030 A (BR) SS3100 (NO) (ZLF) (ZLF) 3100AA(NO) (PG)and andITS ITS4100 4100AA (PG) ITS 31 030 A FP 20-27 P Y BR2722 XXX nel Mount Square Flange Receptacle Assembly anel Mount Square Flange Receptacle S 3100 A (NO) and ITS

Contextual Info: SS313 TOSHIBA 1 SS31 3 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • 2.1 ± 0.1 Small Package. Small Total Capacitance : Ct = 1.2pF Max. Low Series Resistance : rs = 0.6fl (Typ.) 1. 2 5 ± 0.1 3 OO

Contextual Info: TOSHIBA SS314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 4 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5fl (Typ.) M A X IM U M RATINGS (Ta = 25°C)

SS31 DIODE

Abstract: SS31
Contextual Info: SS319 T O SH IB A TOSHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.2 • • • 2.9 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package : SC-61

Contextual Info: SS3144 Unipolar Hall-Effect Digital Switch Features and Benefits Application Examples – – – – – – – – – − − − − − − − 4.5V to 24V Operation -40°C to 150°C Superior temperature operation Bipolar technology Open-collector 25 mA output

1SS313

Contextual Info: TOSHIBA SS313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 3 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. 2.1 ± 0.1 • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) 1.25±0.1 OO +I 3-

1SS312

Contextual Info: TOSHIBA SS312 1 SS31 2 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. 2.1 ± 0.1 • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) 1.25±0.1 OO +I 3-

1SS31

Abstract: 1SS312
Contextual Info: SS312 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 2 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: DATENBLATT PR-31 U Fühler-Temperaturbereich -50 bis 500°C U SteckverbinderTemperaturbereich -50 bis 260°C U In 100 Ohm und 1000 Ohm lieferbar U Fühler aus Edelstahl SS316 U Angegossener vierpoliger M12-Steckverbinder, Schutzklasse IP65 U Vibration geprüft nach