SSM3K03 Search Results

SSM3K03TE

Contextual Info: SSM3K03TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 : Vth = 0.7~1.3 V スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。

SSM3K03FE

Contextual Info: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

SSM3K03FE

Contextual Info: TOSHIBA SSM3K03FE TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K03FE Unit in mm HIGH SPEED SWITCH APPLICATIONS AN ALO G SWITCH APPLICATIONS • • • • 1.6 ± 0.1 2.5 V Gate Drive High Input Impedance Low Gate Threshold Voltage Small Package

Contextual Info: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage

Contextual Info: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics １ ２ ３ 0.59±0.05

Contextual Info: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7 to 1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage

HN7G02FE

Abstract: RN2110 SSM3K03FE
Contextual Info: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)

SSM3K03FV

Abstract: VESM
Contextual Info: SSM3K03FV 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03FV ○ 高速スイッチング用 ○ アナログスイッチ用 : Vth = 0.7~1.3 V • スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。

SSM3K03TE

Contextual Info: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit

SSM3K03FE

Contextual Info: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive · High input impedance · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package Unit: mm

Contextual Info: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

SSM3K03FV

Contextual Info: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages 3 Unit Drain-source voltage

Contextual Info: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

SSM3K03TE

Contextual Info: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit

SSM3K03FE

Contextual Info: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm

Contextual Info: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages 3 Unit Drain-source voltage

Contextual Info: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm

SSM3K03FV

Contextual Info: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7 to 1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage

Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

fet to92

Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
Contextual Info: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU