AM29BL162C
Abstract: No abstract text available
Text: Back ADVANCE INFORMATION Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors
|
Original
|
PDF
|
Am29BL162C
16-Bit)
|
DL162
Abstract: DL163
Text: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
|
Original
|
PDF
|
Am29DL16xC
16-Bit)
FBC048.
DL162
DL163
|
120R
Abstract: IN3064 SA10
Text: Am29BL162C Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
|
Original
|
PDF
|
Am29BL162C
120R
IN3064
SA10
|
Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am29LV640D/Am29LV641D
|
Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am29LV640D/Am29LV641D
|
l640du90r
Abstract: L640DU90RI L640DU90
Text: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
|
Original
|
PDF
|
Am29LV640D/Am29LV641D
16-Bit)
128-word
56-pin
Am29LV640DH/DL
l640du90r
L640DU90RI
L640DU90
|
Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
|
Original
|
PDF
|
Am29LV640D/Am29LV641D
16-Bit)
128-word
64-ball
|
A15F6
Abstract: AM29LV641DL90
Text: ADVANCE INFORMATION Am29LV640DU/Am29LV641DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read, erase, and program operations
|
Original
|
PDF
|
Am29LV640DU/Am29LV641DU
16-Bit)
128-word
56-pin
A15F6
AM29LV641DL90
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
|
Original
|
PDF
|
Am29BL162C
16-Bit)
|
Untitled
Abstract: No abstract text available
Text: Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
|
Original
|
PDF
|
Am29BL802C
16-Bit)
|
Am29BL802CB-120R
Abstract: No abstract text available
Text: PRELIMINARY Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
|
Original
|
PDF
|
Am29BL802C
16-Bit)
Am29BL802CB-120R
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
|
Original
|
PDF
|
Am29BL802C
16-Bit)
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
|
Original
|
PDF
|
Am29BL802C
16-Bit)
16-038-SSO56-2
ES107
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
|
Original
|
PDF
|
Am29LV640D/Am29LV641D
16-Bit)
128-word
|
|
Am29LV* 64 boot
Abstract: Flash Memory Product Selector Guide TSOP 44-40 Package FBC048 AM29DL323C AMD AM29F016B FGA04 pl 032 AM29F010 Product Selector Guide
Text: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode
|
Original
|
PDF
|
Am29SL800C
Am29SL160C
Am29DL400B
Am29DL800B
Am29DL162C
Am29DL163C
Am29DL322C
Am29DL323C
Am29BL162C
Am30LV0064D
Am29LV* 64 boot
Flash Memory Product Selector Guide
TSOP 44-40 Package
FBC048
AMD AM29F016B
FGA04
pl 032
AM29F010
Product Selector Guide
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
|
Original
|
PDF
|
Am29DL162C/Am29DL163C
16-Bit)
|
AM29BL162CB
Abstract: No abstract text available
Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors
|
Original
|
PDF
|
Am29BL162C
16-Bit)
AM29BL162CB
|
Untitled
Abstract: No abstract text available
Text: Am29BL802C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am29BL802C
|
Am29LV641DL90REI
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am29LV640D/Am29LV641D
Am29LV641DL90REI
|
120R
Abstract: No abstract text available
Text: Am29BL802C Data Sheet The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion will continue to offer these products to existing customers.
|
Original
|
PDF
|
Am29BL802C
22371C7
120R
|
Am29BL162CB-70R
Abstract: No abstract text available
Text: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
|
Original
|
PDF
|
Am29BL162C
16-Bit)
Am29BL162CB-70R
|
Am29BL162CB-70R
Abstract: No abstract text available
Text: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors ■ Single power supply operation
|
Original
|
PDF
|
Am29BL162C
16-Bit)
Am29BL162CB-70R
|
L640DU90RI
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileIO control
|
Original
|
PDF
|
Am29LV640D/Am29LV641D
16-Bit)
128-word
85VIO
L640DU90RI
|
Am29DL162CB
Abstract: No abstract text available
Text: PRELIMINARY Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
|
Original
|
PDF
|
Am29DL162C/Am29DL163C
16-Bit)
Am29DL162CB
|