SSOP64 Search Results

Contextual Info: SSOP64-P-525-0.80-BK Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

Contextual Info: SSOP64-P-525-0.80-K Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.34 TYP. 3 版/96.12.5

Contextual Info: SSOP64-P-525-0.80-K Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.34 TYP. 3/Dec. 5, 1996

64P2G-A

Contextual Info: 64P2G-A Plastic 64pin 525mil SSOP EIAJ Package Code SSOP64-P-525-0.80 JEDEC Code – Weight g 1.59 Lead Material Alloy 42 e I2 33 E Recommended Mount Pad F Symbol 1 32 A D y b A1 L e A2 L1 HE e1 64 b2 c Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters

MSM5432128

Contextual Info: Pr E2L0045-17-Y1 el im DESCRIPTION The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply.

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MAS 10 RCD

Abstract: MSM54V32128 1DQ23
Contextual Info: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate

EZ23

Abstract: MSM5432128
Contextual Info: O K I Semiconductor MSM5432126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation Graphic DRAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI’s CMOS silicon gate

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MSM5416272

Contextual Info: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM54V16272

Contextual Info: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM5416263

Abstract: srt 0110
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

ns741

Abstract: MSM5416273 l1741
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM5416283

Abstract: FJDS5416283
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM5416263

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and

Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

WM1-DIN

Abstract: MSM54V1627360
Contextual Info: J2L0025-17-Y1 作成：1998年 1月 MSM54V16273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

Contextual Info: J2L0021-17-Y1 作成：1998年 1月 MSM5416273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM5416273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー

MSM54V16282

Contextual Info: FEDS54V16282-05 ¡ Semiconductor MSM54V16282 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

MSM54V16273

Contextual Info: FEDS54V16273-05 ¡ Semiconductor MSM54V16273 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

MSM54V16272

Contextual Info: FEDS54V16272-05 ¡ Semiconductor MSM54V16272 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

MSM54V16273

Abstract: MSM54
Contextual Info: E2L0025-17-Y1 ¡ Semiconductor MSM54V16273 ¡ Semiconductor This version: Jan. 1998 MSM54V16273 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit