ST 9012 G Search Results

transistor c 9012

Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

Transistor-9013 h

Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9012

Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9012

Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9012

Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9013

Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

NPN 9013

Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

Contextual Info: AtO-2 6.0+o 1 CM CO 7.62 to 2 io CM io o P = 2 . 5 4 t o 03 9 .7 to -3 05 A A A A A A A A O ON 1 1 . 4 ±0.03 2 3 4 5 6 7 8 0 . 6 to-Q 3 WIRING DIAGRAM 1 2 3 4 5 P.C.B. LAYOUT L=2.54x P-1 9001 9002 9003 9004 9005 9006 9007 9008 9009 9010 9012 TG TG TG TG

T52C

Contextual Info: MICRON M T52C 9012 1K x 9 FIFO FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • • • • • Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typical (standby ; 350mW typical

Contextual Info: FLASH MEMORY CMOS 16 M 2 M x 8 BIT MBM29F017-90/-12 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

IRf 9024

Abstract: 9H20 9S05A ST 9014 C
Contextual Info: SSI • GATES, BUFFERSAND INVERTERS STANDARD HIGH SPEED SUPER HIGH SPEED SCHOTTKY tpd = 8 ns Pd = 10 mW per Gate tpd = 6 ns Pd = 22 mW per Gate tpd = 3 ns Pd " 19 mW per Gate ^ 0°C to + 7 0 °C and - 5 5 ° t o +125° C V 9002 0° to +70° C - 5 5 ° to +125°C

marking AHF

Contextual Info: PRELIMINARY p ilC R O N M T52C 9012 FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • OPTIONS • Tim ing 15ns access 20ns access 25ns access 35ns access PIN ASSIGNMENT Top View 28-Pin SOJ (A-9, A -11) (E-8) W|fl ^ 09 |2 Dd I 3

2n120

Abstract: Transistor 9012 ax 9012 transistor
Contextual Info: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

72 x030

Abstract: TW47
Contextual Info: CATALOG LISTIN G H 12TW47 SERIES M ICRO SWITCH S W ITCH -TO G G LE F R E E P O R T . ILL I NOI S, U S A A DI VI S I O N O F H O N E Y W E L L CHART 1 FED. M FC. CODE .0 7 2 W ID E X . 0 3 0 D E E P KEYWAY co ÜJ .535 M AX Z Lü OC < 28° ±4° r'V \ \ £5

7404 TTL CMOS

Abstract: TTL 7400 fairchild TTL 74h04 7404 ttl inverter TTL 7404 fairchild 9016 CI 74LS00 TTL 7404 fairchild 74H00 TTL TTL 9016 fairchild TTL 7401
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-TTL D1 9016, 9S04, 54/7404, 54H/74H04, 54S/74S04, 54LS/74LS04, 9017, 9S05A, 54/7405, 54H/74H05, 54S/74S05, 54L8/74LS05, 54/7406, 54/7414, 54LS/74LS14, 54/7416 D2 9002, 54/7400, 54H/74H00, 54S/74S00, 54LS/74LS00, 9012,

Contextual Info: K * K I* 7ta> 1-71 U M * M3 9012/57-3028 NOTES 1. MATING : Interface dimensions per Mil-C-39012/SMA Series and Solitron/Microwave MD-107. MATERIALS : Body, Press Ring:-Stainless Steel per AMS-5640, Type 303, Cond. A . Crimp Ring:-Copper per WW-T-799, Type K, Form A,

Contextual Info: A F 28003 NOTES: 1. MATING: M39012/28-0018 Interface dimension per Mil-C-39012/TNC Series & Solitron/Microwave MD-108. 1.250 MATERIAL: ALL METAL PARTS EXCEPT CONTACT AND LOCKWASHER.Brass per QQ-B-626, % Hard Alloy 360. CONTACT . Beryllium Copper per Q0-C-530, Cond. HT„

SN54120

Abstract: SN74120
Contextual Info: TTL TYPES SN54120, SN74120 DUAL PULSE SYNCHRONIZERS/DRIVERS MSI B U L L E T I N N O . D L -S 7 2 1 1 8 3 7 , S E P T E M B E R 1 9 7 1 — R E V IS E D D E C E M B E R 1 9 7 2 S N S 41 2 0 . . . J OR W PACKAGE Generates Either a Single Pulse or Train of Pulses

KDS Crystals

Abstract: KDS DATE CODE
Contextual Info: CRYSTALS AT-49, AT-38 UM-5, UM-1, UM-2, HC-49/U SPECIFICATIONS TYPE r , nq R k “ HC 3 2 . HC-49/U 1 84 - 20 0M H z 1 84 - 200M H z A r - c u t T h ic k n e s s - s h c a r M ode of r„n d • 0r 1 .8 4 - 2 0 0 M H z 1 .8 4 - 2 0 0 M H z 3 57 - 26 M H z

Contextual Info: High Speed 8-Bit TTL A/D Converter AD9012 ANALOG DEVICES □ FEATURES 100MSPS Encode Rate Very Low Input Capacitance - 16pF Low Power - 1W TTL Compatible Outputs MIL-STD-883 Compliant Versions Available FUN CTIO N A L BLOCK DIAGRAM AD9012 APPLICATIONS Radar Guidance

PNP 9012 SMD

Abstract: 9012 pnp transistor smd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION