ST DIODE VU Search Results

1SV28

Contextual Info: 1SV286 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 6 Unit in mm High Capacitance Ratio : C2V ! C20V = 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. •

HN2D01F

Abstract: lu2b
Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.

1SV286

Abstract: C20V
Contextual Info: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.

1SV286

Abstract: C20V
Contextual Info: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.

Contextual Info: 1SV286 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 6 Unit in mm CATV CONVERTER 1'st OSC TUNING • High Capacitance Ratio : C2V ! C20V = 8.9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.

1-1G1A

Abstract: 1SV286 C20V
Contextual Info: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • High Capacitance Ratio : C2V / C20V - 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • • • High Capacitance Ratio : C2V / C20V - 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 CATV CONVERTER 1'st OSC TUNING Unit in mm • High Capacitance Ratio : C 2 V /C 20 V —^.9 TYP. • Low Series Resistance • : r$ = 0.73il (TYP.) Useful for Small Size Tuner.

PS2002B

Abstract: PS2002 transistor replacement 0z99
Contextual Info: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect­ ed phototransistor.

Contextual Info: TOSHIBA 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE < ; 1 < ; a 3 n U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 1.6db 0.2 • Sm all Package • Low Forward Voltage • F a st Reverse Recovery Time : trr = i.6 n s Typ. 0.8±0.1 ho : Vjr = 0.92V (Typ.)

Contextual Info: TOSHIBA 1SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS3 09 ULTRA HIGH SPEED SWITCHING APPLICATIONS. U n it in mm +0.2 1 .8 -0.3 + 0.2 .6 • Sm a ll Package : SC-74A • Low Forw ard Voltage : V jr 3 = 0.90V (Typ.) • Fa st Reverse Recovery Tim e :

ic vrm

Contextual Info: TOSHIBA 1SS308 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS3Q8 ULTRA HIGH SPEED SWITCHING APPLICATIONS. U n it in mm + 0.2 1 .8 -0.3 + 0.2 .6 • Sm a ll Package : SC-74A • Low Forw ard Voltage : V jr 3 = 0.92V (Typ.) • Fa st Reverse Recovery Tim e :

Contextual Info: TOSHIBA 1SS370 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 <; <; 3 7 n • v r wêêf m w HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS • Low Forward Voltage V F 2 = 0.9V (TYP.) • F a st Reverse Recovery Time tr r —60 ns (MAX.) • Sm all Total Capacitance

502-HJ

Abstract: 3R3TI30E-080
Contextual Info: 3R3TI30E-080 4 st — K •U " 'f ' J X ^ i l — ;u : Outline Drawings DIODE and TYRISTOR MODULE • 4 # d i ■ Features • ^ ^ ^ ' < ' > ^ — '> 3 • 7 ^ Glass Passivation Chip Easy Connection • i&fi&ffi Insulated Type » <i T«.0 1 O.i 1 ».D i t

C 5388

Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
Contextual Info: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class

Contextual Info: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • H N 2 D 0 1 FU is composed of 3 independent diodes. • Low Forw ard Voltage • Fa st Reverse Recovery Tim e : tr r = 1.6ns Typ.

Contextual Info: TOSHIBA TLP598G T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP598G Unit in mm T EL E C O M M U N IC A T IO N D A T A A C Q U ISIT IO N M E A SU R E M E N T IN ST R U M EN T AT IO N The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a

Contextual Info: TOSHIBA TLP599B T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP599B T EL E C O M M U N IC A T IO N U nit in mm D A T A A C Q U ISIT IO N M E A SU R E M E N T IN ST R U M EN T AT IO N 6 Ti The TOSHIBA TLP599B consists of a gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead

Contextual Info: T O SH IB A TLP598B T O S H IB A PH O T O C O U PLER PH O TO R ELA Y TLP598B TELE C O M M U N IC A T IO N U nit in mm D ATA A C Q UISITIO N M E A S U R E M E N T IN ST R U M EN T A TIO N The TO SH IBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS F E T in a

Contextual Info: ESD Protection of Set Top Appliances with PolySurg ESD Suppressors Why are Set Top boxes vulnerable to ESD The more sophisticated boxes include a variety of I/O jacks such as front panel USB, Audio/Video, S-Video, rear panel Satellite, cable, TV antenna, Wireless transmitter connection,

50-08N

Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
Contextual Info: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —

Contextual Info: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous

Contextual Info: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W

Contextual Info: SKKT 15, SKKH 15 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 0 Thyristor / Diode Modules LMNO LMMO= LDMO L XVV ¥VV TAVV TBVV L @VV UVV TCVV TRVV PISL Q TB S G*2 > TUVW I5 Q XB YEH NZZI TB[V@? NZZ$ TB[V@? NZZI TB[VU? NZZ$ TB[VU? NZZI TB[TC? NZZ$ TB[TC? NZZI TB[TR?