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    STANDARD RECOVERY 1200 AMP 1600 VOLT HIGH POWER DIODE Search Results

    STANDARD RECOVERY 1200 AMP 1600 VOLT HIGH POWER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    STANDARD RECOVERY 1200 AMP 1600 VOLT HIGH POWER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    syntron rectifier

    Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
    Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES


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    4A05 diode

    Abstract: ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG SM3FG 2CL2FP HVW3 diode SM3F
    Text: HIGH VOLTAGE LOW CURRENT RECTIFIERS – NV, G SERIES FIGURE 24 NV•FP Series FIGURE 0.080 Lead Diameter 0.020 0.12 Max. FIGURE 2 G•FS Series G•FG Series 1” Min. FIGURE 4 0.120 Lead Diameter 0.024 1” Min. D Lead Diameter 0.023 1” Min. 3 L Max. G•GE & G•PE Series


    Original     		PDF CT1000V6AA60 CT1000V6AA100 CT1000V6AA120 CT1000V6AA160 CT1000V6AA40 CT1000V6AA80 CT400K6AA120 CT400K6AA100 CT400K6AA80 CT400K6AA40 4A05 diode ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG SM3FG 2CL2FP HVW3 diode SM3F

    D77P2900S

    Abstract: T52P800S SCR 25 amps PIV 600 D77P4400 D38P1000S3 Ignitron D77P4400S Standard recovery 1200 Amp 1600 volt high power diode D38P750S T30P600S
    Text: DIODE CAPSULES & SCR CAPSULES Diode Capsules Cathode Anode Inches Strike Distance = .73 inch Creepage Distance = 1.17 inch Strike Distance = .38 inch Creepage Distance = .58 inch 1.30 1.35 2 Places .130 .150 Depth: .070 .080 .980 .150 Depth: .070 .080 1.590


    Original     		PDF CL2A335037502C D77P2900S T52P800S SCR 25 amps PIV 600 D77P4400 D38P1000S3 Ignitron D77P4400S Standard recovery 1200 Amp 1600 volt high power diode D38P750S T30P600S

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    transistor c1417

    Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
    Text: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components


    Original     		PDF 980nm) 100ppb transistor c1417 TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530

    MJE18004D2

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 2A200
    Text: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar


    Original     		PDF MJE18004D2 MJE18004D2 MJE18004D2/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 2A200

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original     		PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    ttl 7400

    Abstract: pioneer mosfet ic 007 MOSFD100100R40 OPTO SCR blocking Voltage 1600 Volt w9020 powertherm 4604 mosfet teledyne 640 relay LRMOSD50-50R25-H 641-1 teledyne
    Text: CD-ROM MAIN MENU 25 Years of Solid Commercial and Industrial Experience Commercial/Industrial S O L I D S T AT E R E L A Y D ATA B O O K APPLICATIONS: INDUSTRIAL & PROCESS CONTROL HEATER & LIGHT CONTROL AUTOMATION EQUIPMENT ENERGY MANAGEMENT INSTRUMENTATION


    Original     		PDF szss20 SUNS8888 TEL010-81159046 FAX010-62543996 TEL021-28311762 FAX021-56703037 TEL029-81022619 ttl 7400 pioneer mosfet ic 007 MOSFD100100R40 OPTO SCR blocking Voltage 1600 Volt w9020 powertherm 4604 mosfet teledyne 640 relay LRMOSD50-50R25-H 641-1 teledyne

    25P03L

    Abstract: 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G
    Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast


    Original     		PDF NTD25P03L NTD25P03L/D 25P03L 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G

    Untitled

    Abstract: No abstract text available
    Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast


    Original     		PDF NTD25P03L NTD25P03L/D

    25p03lg

    Abstract: 03LG NTD25P03LT4G 25p03l NTD25P03LG 03LG Power MOSFET DPak Package size
    Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast


    Original     		PDF NTD25P03L NTD25P03L/D 25p03lg 03LG NTD25P03LT4G 25p03l NTD25P03LG 03LG Power MOSFET DPak Package size

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    STD25P03LT4G

    Abstract: dpak mosfet 25p03lg STD25P03L NTD25P03
    Text: NTD25P03L, STD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast


    Original     		PDF NTD25P03L, STD25P03L AEC-Q101 NTD25P03L/D STD25P03LT4G dpak mosfet 25p03lg NTD25P03

    pnp npn dual emitter connected

    Abstract: DD 127 D TRANSISTOR Diode LT 228 G37 IC marking 1801 Video Op Amps 300MHz LT1800 LT1801 LT1801CDD LT1802
    Text: LT1801/LT1802 Dual/Quad 80MHz, 25V/µs Low Power Rail-to-Rail Input and Output Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1801/LT1802 are dual/quad, low power, high speed rail-to-rail input and output operational amplifiers


    Original     		PDF LT1801/LT1802 80MHz, 1801/LT1802 LT1801/LT1802 80MHz 250nA 150MHz, LT1806) 90dBc pnp npn dual emitter connected DD 127 D TRANSISTOR Diode LT 228 G37 IC marking 1801 Video Op Amps 300MHz LT1800 LT1801 LT1801CDD LT1802

    LT1800

    Abstract: LT1801 LT1801CDD LT1802
    Text: LT1801/LT1802 Dual/Quad 80MHz, 25V/µs Low Power Rail-to-Rail Input and Output Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1801/LT1802 are dual/quad, low power, high speed rail-to-rail input and output operational amplifiers


    Original     		PDF LT1801/LT1802 80MHz, 1801/LT1802 LT1801/LT1802 80MHz 150MHz, LT1806) 90dBc LT1809) LT1800 LT1801 LT1801CDD LT1802

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    Untitled

    Abstract: No abstract text available
    Text: LT1800 80MHz, 25V/µs Low Power Rail-to-Rail Input and Output Precision Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Gain Bandwidth Product: 80MHz Input Common Mode Range Includes Both Rails Output Swings Rail-to-Rail Low Quiescent Current: 2mA Max


    Original     		PDF LT1800 80MHz, 80MHz 250nA 105dB 150MHz, LT1806) 90dBc LT1809)

    g15 npn

    Abstract: G37 IC LT1800 FMMT619 LT1800CS8 LT1801 LT1802 G38 transistor LTRN sot 5 LTRP
    Text: LT1800 80MHz, 25V/µs Low Power Rail-to-Rail Input and Output Precision Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Gain Bandwidth Product: 80MHz Input Common Mode Range Includes Both Rails Output Swings Rail-to-Rail Low Quiescent Current: 2mA Max


    Original     		PDF LT1800 80MHz, 80MHz 250nA 105dB 150MHz, LT1806) 90dBc LT1809) g15 npn G37 IC LT1800 FMMT619 LT1800CS8 LT1801 LT1802 G38 transistor LTRN sot 5 LTRP

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.822A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS _ o , IRHN7230 IRHN853Q N-CHANNEL MEGA RAD HARD 200 Volt, 0.40J2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan     		PDF IRHN7230 IRHN853Q 1x106 1x105 00nQ33 IRHN7230, IRHN8230 D01RD34 H-310

    Semicon volume 1

    Abstract: HVC-50F s5a1 LTA 902 sx
    Text: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage


    OCR Scan     		PDF 1TP600 CTP700 CTP800 CTP1000 CTP1200 VB100 VB200 VB300 VB400 VB500 Semicon volume 1 HVC-50F s5a1 LTA 902 sx

    ata 2398

    Abstract: IC ATA 2398 WESTCODE SW 1976 R325CHX r400ch AL 1450 DV TBA 1205
    Text: Shortform Design Guide WESLS001 Issue 7 W estcod e “D ” and “R ” se rie s of fast sw itching thyristors have a regenerative interdigitated gate structure to ensure low sw itching lo sse s and high di/dt perform ance. Low reverse recovery charge values, com bined with the


    OCR Scan     		PDF WESLS001 ata 2398 IC ATA 2398 WESTCODE SW 1976 R325CHX r400ch AL 1450 DV TBA 1205

    H142

    Abstract: H143 h141 h147 H146 H149
    Text: Data Sheet No. PD-9.672A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7S3Q IRHF8230 N-CHANNEL SN7S62 JANSRSN7S6S JANSH2N7S68 MEGA RAD HARD 200 Volt, 0.40Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		PDF IRHF8230 SN7S62 JANSH2N7S68 1x106 H-149 IRHF7230, IRHF8230, 2N7262 H-150 H142 H143 h141 h147 H146 H149

    edi minibridge pb20

    Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
    Text: electronic devices, inc. Short Form Catalog 90 silicon bridge rectifiers low & hv diodes stock & custom hv assemblies ELECTRONIC DEVICES, INC. • 21 GRAY OAKS AVE., YONKERS, NY 10710 • 914-965-4400 • 800-678-0828 • FAX 914-965-5531 • TELEX 681-8047


    OCR Scan     		PDF