STATIC RAM 2048K Search Results

EDI8M8256C

Abstract: 120PC
Contextual Info: EDI8M8256C70/100/120PC m o \ High Performance 2 Megabit SRAM Module MliyiMIDNIÆOT 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. 256Kx8 bit CMOS Static Random Access Memory Module It is based on eight 32Kx8 Static RAMs in plastic

Contextual Info: ^E D I _ EDI8F82048C Electronic Dvtions Inc. Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM 2048Kx8 bit CMOS Static based on sixteen 128Kx8 Static RAMs mounted on a multi- Random Access Memory

CY7C1069AV33

Contextual Info: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Functional Description Features The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished

D1581

Abstract: OQ10 EDI8G322048C
Contextual Info: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory

Contextual Info: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic

cd 5151

Abstract: 1MX4 EDI8G322048V EDI8G322048V20MMC DQ28-DQ31
Contextual Info: EDI8G322048V 2048K x 32 Static RAM CMOS, High Speed Module Features DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048V is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ

CY7C1069AV33

Contextual Info: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished

10ZX

Abstract: CY7C1069AV33-10ZXC CY7C1069AV33
Contextual Info: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished

CY7C1069AV33

Contextual Info: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished

Contextual Info: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory

Contextual Info: EDI8G322048C 2048K x 32 Static R AM CMOS, High Speed Module RAM FEATURES DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048C is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ

DQ8-DQ11

Abstract: EDI8G322048C static ram 2048K 70 ns
Contextual Info: EDI8G322048C 2048K x 32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION •2048K x 32 bit CMOS Static The EDI8G322048C is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

A571

Abstract: EDI8M8257C EDI8M8257C25C6C
Contextual Info: EDI8M8257C Electronic Designs Inc. i High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional eq uivalence to the monolithic two megabit

Contextual Info: _ EDI8M8257C ^E D I E itd ro n ic D«rign* Inc. High Speed Two Megabit SRAM Module raiUiBlNraY 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate.

Contextual Info: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

EDI8M8257C

Abstract: EDI8M8257C25M6C EDI8M8257C30M6C EDI8M8257C35M6C EDI8M8257C45M6C EDI8M8257C55M6C
Contextual Info: _ EDI8M8257C m o\ B*c*ontc DMgrn inc. High Speed Two Megabft SRAM Module 256Kx8 Static RAM CMOS;Module m Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

EDI8M8257C

Abstract: DDD15L
Contextual Info: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static

t1is

Contextual Info: ELECTRONIC DESIGNS INC ^ED I 3QE D Elaekontfi Dislgns Inc. » • 3530114 0000714 b ■ EDI8M8257C/LP/P High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a

Contextual Info: m a _ Electronic Dsaigns Inc. > EDI8F82048C Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate.

Contextual Info: ^E D I _ EDI8M8257C B # clro n lc D« 4 g n t In c. i High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate.

ic 4570 PINOUT

Abstract: 4570 chip ic 229AC
Contextual Info: ^EDI EDI8M8257C/LP/P E lectronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi-layered ceramic substrate. Functional equivalence to the monolithic four mega­

EDI8F82048C

Abstract: bb3011
Contextual Info: ELECTRONIC DESIGNS INC SIE D • 3230114 0QQ11MÔ SIR H E L D EDI8F82048C m o\ B*ctonJc DMigm Inc.« Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi­

Contextual Info: m o EDI8G322048C i 2043Kx32 SRAMModtÉe ElfC TB O N C D O C N SN C . 2048Kx32Static RAM CMOS> High SpeedModule Features The EDI8G322048C is a high speed 64 megabit Static 2048Kx32 bit CMOS Static RAM module organized as 2048K words by 32 bits. This Random Access Memory

CY7C1069AV33

Contextual Info: CY7C1069AV33 2M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished