Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STD1NB80 Search Results

    SF Impression Pixel

    STD1NB80 Price and Stock

    STMicroelectronics STD1NB80-1

    TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,1A I(D),TO-251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components STD1NB80-1 9,747
    • 1 $1.23
    • 10 $1.23
    • 100 $1.23
    • 1000 $1.23
    • 10000 $0.4305
    Buy Now

    Others STD1NB80T4

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange STD1NB80T4 74
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    STD1NB80 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD1NB80 STMicroelectronics N - CHANNEL 800V - 16 ? - 1A - DPAK-IPAK PowerMESH MOSFET Original PDF
    STD1NB80- STMicroelectronics N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET Original PDF
    STD1NB80 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD1NB80-1 STMicroelectronics N - CHANNEL 800V - 16 ? - 1A - IPAK PowerMESH MOSFET Original PDF
    STD1NB80T4 STMicroelectronics N-Channel 800 V - 16 ohm - 1 A - DPAK PowerMESH MOSFET Original PDF

    STD1NB80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STD1NB80 N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD1NB80 800 V < 20 Ω 1A • TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original
    PDF STD1NB80

    STD1NB80

    Abstract: No abstract text available
    Text: STD1NB80 N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD1NB80 800 V < 20 Ω 1A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF STD1NB80 STD1NB80

    d1nb80

    Abstract: STD1NB80 274PF d1nb8
    Text: STD1NB80 N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE ST D1NB80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 20 Ω 1 A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF STD1NB80 D1NB80 d1nb80 STD1NB80 274PF d1nb8

    STD1NB80-1

    Abstract: No abstract text available
    Text: STD1NB80-1 N - CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD1NB80-1 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 20 Ω 1A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF STD1NB80-1 O-25fication STD1NB80-1

    STD1NB80-1

    Abstract: No abstract text available
    Text: STD1NB80-1 N - CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD1NB80-1 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 20 Ω 1A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF STD1NB80-1 O-251 STD1NB80-1

    STD1NB80

    Abstract: No abstract text available
    Text: STD1NB80 N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD1NB80 800 V < 20 Ω 1A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF STD1NB80 STD1NB80

    d1nb80

    Abstract: D1NB80-1 D1NB STD1NB80-1 STD1NB80
    Text: STD1NB80-1 N - CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE ST D1NB80-1 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 20 Ω 1 A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF STD1NB80-1 D1NB80-1 d1nb80 D1NB80-1 D1NB STD1NB80-1 STD1NB80

    stu9nc80zi

    Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
    Text: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L


    Original
    PDF STT2PF60L STT3PF30L STT3PF20L STT4NF30L STT1NF100 STT5PF20V STT3PF20V STT5NF20V PowerSO-10, ISOWATT218, stu9nc80zi STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original
    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original
    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original
    PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    220v ac to 12V 10A SMPS

    Abstract: smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps
    Text: Switch Mode Power Supplies Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Battery Charger and Adapter Front End Inrush PFC * Flyback Pout > 70W STBRXXX Bridge + + AC Post Regulation * TSM10x PWM + CV & CC


    Original
    PDF TSM10x TSM101 TSM102 TSM103 TSM104 PowerSO-10, Max220, Max247, ISOWATT220, 220v ac to 12V 10A SMPS smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original
    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Complementary MOSFETs buz11

    Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
    Text: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof


    Original
    PDF STGD3NB60S STGD3NB60SD STGD7NB60S STGP10NB60S STGD7NB120S-1 O-220 ISOWATT218, PowerSO-10 Max247 STE180NE10 Complementary MOSFETs buz11 IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L


    Original
    PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90

    Untitled

    Abstract: No abstract text available
    Text: STD1NB80-1 N - CHANNEL 800V - 16Q - 1 A - IPAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE STD1 NB80-1 • . . . . V d ss R DS on Id 800 V < 20 0. 1 A TYPICAL R D S (on) = 1 6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan
    PDF STD1NB80-1 NB80-1 O-251