STGF1 Search Results

Contextual Info: STGF14HF60KD STGP14HF60KD 14 A - 600 V - short-circuit rugged IGBT Preliminary data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution

GF10NC60SD

Abstract: GF10NC60 stgf10nc60sd gf10nc
Contextual Info: STGD10NC60SD STGF10NC60SD 10 A - 600 V fast IGBT Features • Very low on-voltage drop VCE(sat ■ Very soft ultra fast antiparallel diode ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies 3 Application

Contextual Info: STGB10H60DF, STGF10H60DF, STGP10H60DF 600 V, 10 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features TAB • High speed switching • Tight parameters distribution 3 1 • Safe paralleling D²PAK • Low thermal resistance • Short-circuit rated

GP10NC60KD

Abstract: STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking STGF10NC60KD gp10nc60
Contextual Info: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V

GP14NC60

Abstract: gf14nc60kd GF14NC60 STGP14NC60KD STGB14NC60KD STGB14NC60KDT4 STGF14NC60KD gf14n
Contextual Info: STGP14NC60KD - STGF14NC60KD STGB14NC60KD N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat (Max) @25°C IC (#) @100°C STGB14NC60KD STGF14NC60KD STGP14NC60KD 600 V

GP19NC60SD

Abstract: STGF19NC60SD STGP19NC60SD
Contextual Info: STGF19NC60SD STGP19NC60SD 20 A, 600 V fast IGBT with Ultrafast diode Features • Very low on-voltage drop VCE(sat ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. ■ TAB 3 1 IGBT co-packaged with Ultrafast freewheeling

GP10NC60KD

Abstract: GF10NC60 GF10NC60KD gp10nc60 gf10nc H1 IC gp10nc60k STGP10NC60KD morocco L3 STGF10NC60KD
Contextual Info: STGP10NC60KD - STGF10NC60KD STGB10NC60KD N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat (Max) @25°C IC @100°C STGB10NC60KD STGF10NC60KD STGP10NC60KD 600 V

GP19NC60kd

Abstract: GF19NC60KD GB19NC60KD
Contextual Info: STGB19NC60KD STGF19NC60KD - STGP19NC60KD 20 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling

SCHEMATIC dimmer igbt

Abstract: igbt dimmer applications circuit diagram STGF10NB60SD igbt dimmer SCHEMATIC igbt dimmer Q1215 GF10NB60SD
Contextual Info: STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features • Low on-voltage drop VCE(sat ■ High current capability ■ Very soft ultra fast recovery antiparallel diode TAB Applications ■ Light dimmer ■ Static relays

STGW19NC60HD

Abstract: STGB19NC60HD GF19NC60HD GP19NC60HD STGB19NC60HDT4 STGF19NC60HD STGP19NC60HD GF19NC60
Contextual Info: STGB19NC60HD, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A - 600 V - very fast IGBT Features • Low on-voltage drop VCE(sat ■ Very soft ultra fast recovery anti-parallel diode 3 3 1 D²PAK Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and

GF19NC60HD

Abstract: JESD97 STGF19NC60HD
Contextual Info: STGF19NC60HD N-channel 600V - 9A - TO-220FP Very fast PowerMESH IGBT General features Type VCES STGF19NC60HD 600V VCE sat IC @100°C (max)@25°C < 2.5V 9A • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■

STGIP3M25N60

Abstract: STGB10NB37LZT4 DPAK Internally Clamped Powermesh Igbt STGW40NC60WD STGIPS20K60 stgw38ih130d SEMITOP STGW40NC60KD STGW38IH130D2 HF IGBT
Contextual Info: IGBTs Selection guide September 2009 www.st.com/igbt Low drop IGBTs switching frequency up to 1 kHz Part number Voltage VCES (V) STGD3NB60SDT4 Package DPAK STGD7NB60ST4 STGD3NB60SD-1 IPAK STGB3NB60SDT4 D2PAK STGB10NB60ST4 STGF7NB60SL STGP10NB60SFP 600 STGF10NB60SD

Contextual Info: STGF19NC60WD N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA General features Type VCES STGF19NC60WD 600V • VCE sat IC @100°C (max)@25°C < 2.5V 7A 3 High frequency operation 1 ■ Low CRES / CIES ratio (no cross-conduction susceptbility)

GP19NC60KD

Abstract: GF19NC60KD GF19NC60 GB19NC60KD STGF19NC60KD
Contextual Info: STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs

GP15H60DF

Abstract: GB15H60DF diode 278
Contextual Info: STGB15H60DF, STGF15H60DF, STGP15H60DF 600 V, 15 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features TAB • High speed switching • Tight parameters distribution 3 1 • Safe paralleling D²PAK • Low thermal resistance • Short-circuit rated

GF14NC60KD

Abstract: GP14NC60KD gb14nc60kd JESD97 STGB14NC60KD STGB14NC60KDT4 STGF14NC60KD STGP14NC60KD GB14NC60K GP14NC60
Contextual Info: STGB14NC60KD STGF14NC60KD - STGP14NC60KD 14 A - 600 V - short circuit rugged IGBT Features 2 • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Switching losses include diode recovery energy ■ Very soft ultra fast recovery antiparallel diode

STGW19NC60HD

Contextual Info: STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode 3 3 1 Applications D²PAK ■ High frequency motor drives

STGB3NB60SDT4

Contextual Info: £jj Low drop, standard speed IGBTs - frequency up to 1kHz Part number BVces M STGB3NB60SDT4 STGD3NB60SDT4 STGD3NB60SD-1 STGF7NB60SL STGP10NB60SFP STGF10NB60SD STGD7NB60ST4 STGB10NB60ST4 STGP10NB60S STGP10NB60SD STGF20NB60S STGW35NB60SD STGE200NB60S 600 600

GF10NC60

Abstract: gf10nc STGF10NC60SD E600
Contextual Info: STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching • Low on-voltage drop VCE(sat ■ Very soft ultra fast antiparallel diode TA B ■ 3 Application ■ 3 1 Motor drive

GF19NC60WD

Abstract: JESD97 STGF19NC60WD
Contextual Info: STGF19NC60WD N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGF19NC60WD 600V • VCE sat IC @100°C (max)@25°C < 2.5V 7A 3 High frequency operation 1 ■ Low CRES / CIES ratio (no cross-conduction susceptibility)

GW19NC60HD

Abstract: GF19NC60HD gb19nc60 gb19nc60hd STGF1 GF19NC60 STGF19NC60HD STMicroelectronics DPAK Marking CODE
Contextual Info: STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode 3 3 1 Applications D²PAK ■ High frequency motor drives

GF10NC60

Abstract: GP10NC60KD gf10nc STGF10NC60KD STGB10NC60KD STGB10NC60KDT4 STGP10NC60KD GB10NC60KD GF10NC60KD JESD97
Contextual Info: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V

GP10NC60KD

Abstract: STGx10NC60KD GF10NC60KD STGB10NC60KDT4 GD10NC60KD GB10NC60KD STGB10NC60KD STGD10NC60KD STGD10NC60KDT4 STGF10NC60KD
Contextual Info: STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB • Lower on voltage drop VCE(sat ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

STGW100N30

Abstract: A3303 c040 STGF100N30
Contextual Info: STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features • Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET technology ■ Peak collector current IRP = 330 A @ TC = 25 °C see Table 2 ■