STL5 Search Results

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■

2 Wavelength Laser Diode

Abstract: Fabry-Perot-Laser 1550 1550 laser diode Laser diode Fabry-Perot STL51007G STL51007N
Contextual Info: LOW POWER STL51007x 1300 nm FP Laser in FC or SC Receptacle Package Dimensions in inches mm .322 (8.2) .307 (7.8) STL51007G Ø .022 (.55) Ø .016 (.40) .755 (19.2) .739 (18.8) 4 1 spacing .1 (2.54) M8 x .029 (.75) .283 (7.2) .267 (6.8) 3 2 .534 (13.6) .519 (13.2)

Contextual Info: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

Contextual Info: STL50NH3LL N-CHANNEL 30 V - 0.011 Ω - 27 A PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ MOSFET Figure 1: Package Table 1: General Features TYPE STL50NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID (1) 30 V < 0.013 Ω 27 A TYPICAL RDS(on) = 0.011 Ω @ 10V

STL51N3LLH5

Contextual Info: STL51N3LLH5 N-channel 30 V, 0.0105 Ω, 51 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Type VDSS RDS on max ID STL51N3LLH5 30 V < 0.0145 Ω 51 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STL50N25N3LLH5 Dual N-channel 30 V, 0.006 Ω typ., 14.6 A PowerFLAT STripFET™ V Power MOSFET in 5x6 asymmetrical double island package Datasheet — preliminary data Features Order code STL50N25N3LLH5 • VDSS RDS on max. ID Q1 30 V < 0.0135 Ω Q2 30 V < 0.0071 Ω 14.6 A

STL57N65M5

Contextual Info: STL57N65M5 N-channel 650 V, 0.061 Ω typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features Order code VDS @ TJmax RDS on max ID STL57N65M5 710 V 0.069 Ω 22.5 A(1) 3 3 3 ' $ 1. The value is rated according to Rthj-case and limited by

diode transmitter fiber

Abstract: DFB Laser-Diode 1550 nm 1300 laser diode rise time 1550 laser diode Fabry-Perot-Laser 1550 laser transmitter 1550 nm STL51004G STL51004N STL51004Z STL51005G
Contextual Info: LOW POWER STL51004x / STL51005x 1300 nm FP Laser Dimensions in mm STL51005G Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C Soldering temperature tmax=10 s,

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

Contextual Info: STL52N25M5 N-channel 250 V, 0.064 Q 28 A, PowerFLAT 5x6 MDmesh™ V Power MOSFET Features Type V DSS RDS(on) max. Id (1) STL52N25M5 250 V < 0.076 Q 28 A 1. This value is rated according Rthj.case. • A m ongst the best R ps^n )* area ■ V ery low profile package (1 mm max.)

Laser diode Fabry-Perot

Abstract: STL51004Z STL51005G STL51005N STL51005Z STL51004G STL51004N stl51005
Contextual Info: Fiber Optics Low Power 1300 nm FP Laser STL51004x STL51005x Features • • • • Designed for applications in fiber optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary Photodiode at rear mirror for monitoring

Contextual Info: SI EM ENS STL51004/51005G/N/Z m e d iu m p o w e r STM51004/51005G/N/Z HIGH POWER STH51004/51005G/N/Z LOW p o w e r Fiber Optics Com ponents La ser D iode s 1300 nm Laser in Coaxial Package with SM-Pigtail FEATURES • Designed for fiber optic networks • Laser diode with Multi-quantum well structure

L5NK65Z

Abstract: STL5NK65Z
Contextual Info: STL5NK65Z N-CHANNEL 650V - 1.5Ω - 4.2A PowerFLAT Zener-Protected SuperMESH™Power MOSFET PRELIMINARY DATA TYPE STLNK65Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID (1) Pw (1) 650 V < 1.8 Ω 4.2 A 75 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: STL52N25M5 N-channel 250 V, 0.064 Ω, 28 A, PowerFLAT 5x6 MDmesh™ V Power MOSFET Features Type VDSS RDS(on) max. ID(1) STL52N25M5 250 V < 0.076 Ω 28 A 1. This value is rated according Rthj-case. • Amongst the best RDS(on)* area ■ Very low profile package (1 mm max.)

Contextual Info: STL55NH3LL N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type RDS(on) max ID < 0.0088 Ω 15 A VDSS ) s ( t c u d o ) r s ( P t c e t u e d l Application o o r s P b e O t Description e l ) o s

L50NH3LL

Abstract: STL50NH3LL
Contextual Info: STL50NH3LL N-CHANNEL 30 V - 0.011 Ω - 27 A PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL50NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID (1) 30 V < 0.013 Ω 27 A (*) TYPICAL RDS(on) = 0.011 Ω @ 10V

C55A

Abstract: L55NH3LL JESD97 STL55NH3LL
Contextual Info: STL55NH3LL N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL55NH3LL 30 V < 0.0088 Ω 15 A • Improved die-to-footprint ratio ■ Very low profile package (1mm max) ■

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■

JESD97

Abstract: STL55NH3LL L55NH3LL
Contextual Info: STL55NH3LL N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL55NH3LL 30 V < 0.0088 Ω 15 A • Improved die-to-footprint ratio ■ Very low profile package (1mm max) ■

Contextual Info: STL5NK65Z N-CHANNEL 650V - 1.5Ω - 4.2A PowerFLAT Zener-Protected SuperMESH™Power MOSFET PRELIMINARY DATA TYPE STLNK65Z • VDSS RDS on ID (1) Pw (1) 650 V < 1.8 Ω 4.2 A 75 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY

Contextual Info: STL56N3LLH5 N-channel 30 V, 0.0076 Ω, 15 A STripFET V Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Type VDSS RDS on max ID STL56N3LLH5 30 V < 0.009 Ω 15 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark

Contextual Info: STL50NH3LL N-CHANNEL 30 V - 0.011 Ω - 13 A PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ MOSFET Table 1: General Features TYPE STL50NH3LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 30 V < 0.013 Ω 13 A (2) TYPICAL R DS(on) = 0.011 Ω @ 10V

L5NK65Z

Abstract: STL5NK65Z stl5
Contextual Info: STL5NK65Z N-CHANNEL 650V - 1.5Ω - 4.2A PowerFLAT Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STLNK65Z • ■ ■ ■ ■ ■ ■ VDSS R DS on I D (1) Pw (1) 650 V < 1.8 Ω 4.2 A 75 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY

STL51007G

Abstract: STL51007N DSA0016253
Contextual Info: Fiber Optics Low Power 1300 nm FP Laser in FC or SC Receptacle Package STL51007x Features • • • • Designed for applications in fiber optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary Photodiode at rear mirror for monitoring