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    STMICROELECTRONICS MARKING STYLE Search Results

    STMICROELECTRONICS MARKING STYLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    STMICROELECTRONICS MARKING STYLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STMicroelectronics marking code date

    Abstract: Date Code Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING sumitomo crm epoxy Part Marking STMicroelectronics Ablebond 8360 marking code stmicroelectronics ablestik 8360 device Marking STMicroelectronics 1076E
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/451 FWH AND LPC FAMILY PLCC32 PACKAGE ENVIRONMENTAL FRIENDLY AND ASSEMBLY LOCATION CHANGE 2004/02/12 PCN MPG-EEP/04/451 Product Family /Commercial Product M50FW M50LPW M50FLW Type Of Change Multiple types of changes


    Original     		PDF MPG-EEP/04/451 PLCC32 M50FW M50LPW M50FLW 30-Apr-2004 30-May-2004 STMicroelectronics marking code date Date Code Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING sumitomo crm epoxy Part Marking STMicroelectronics Ablebond 8360 marking code stmicroelectronics ablestik 8360 device Marking STMicroelectronics 1076E

    STMicroelectronics marking code date

    Abstract: CHN G4 chn 509 marking code stmicroelectronics Date Code Marking STMicroelectronics CHN 450 SUMITOMO G700 ablebond 8290 Part Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/578 M50FW, M50LPW, M50FLW Firmware Hub and Low Pin Count Product Families, TSOP40 Environmental Friendly Package and Assembly Location Change WHAT IS THE CHANGE? The present PCN replaces and upgrades PCN MPG/EE/0086 / CPCN MPG/EEP/04/450.


    Original     		PDF MPG-EEP/04/578 M50FW, M50LPW, M50FLW TSOP40 MPG/EE/0086 MPG/EEP/04/450. STMicroelectronics marking code date CHN G4 chn 509 marking code stmicroelectronics Date Code Marking STMicroelectronics CHN 450 SUMITOMO G700 ablebond 8290 Part Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING

    SOT-666IP

    Abstract: 020L2
    Text: ESDA6V1-5P6 TRANSIL ARRAY FOR ESD PROTECTION ASD™ MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers Printers ■ Communication systems and cellular phones ■ Video equipment This device is particularly adapted to the protection of symmetrical signals.


    Original     		PDF OT-666IP SOT-666IP 020L2

    trays STMICROELECTRONICS

    Abstract: No abstract text available
    Text: SD1458 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –55 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ HIGH SATURATED POWER CAPABILITY ■ DESIGNED FOR HIGH POWER LINEAR


    Original     		PDF SD1458 SD1458 trays STMICROELECTRONICS

    M135

    Abstract: SD1274 gp 832
    Text: SD1274 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF


    Original     		PDF SD1274 SD1274 M135 gp 832

    TH416

    Abstract: SD1729
    Text: SD1729 TH416 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 130 W PEP WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon


    Original     		PDF SD1729 TH416) SD1729 TH416

    SD1407

    Abstract: vk200 VK-200 vk 200 SD140
    Text: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    Original     		PDF SD1407 SD1407 vk200 VK-200 vk 200 SD140

    Arco 426

    Abstract: No abstract text available
    Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION


    Original     		PDF SD1727 THX15) SD1727 Arco 426

    SD1446

    Abstract: arco 468 M113
    Text: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1446 SD1446 arco 468 M113

    Untitled

    Abstract: No abstract text available
    Text: SD1455 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 25 VOLTS ■ IMD - 55dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS


    Original     		PDF SD1455 SD1455

    SD1487

    Abstract: 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465
    Text: SD1487 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 12.5 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 100 W MIN. WITH 12.0 dB GAIN DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1487 SD1487 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465

    electrolytic capacitor 47uF

    Abstract: No abstract text available
    Text: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base


    Original     		PDF SD4600 SD4600 960MHz electrolytic capacitor 47uF

    Untitled

    Abstract: No abstract text available
    Text: STL20NM20N N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE STL20NM20N • ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 200 V < 0.105 Ω 20 A WORLDWIDE LOWEST GATE CHARGE


    Original     		PDF STL20NM20N

    transistor M122

    Abstract: SD1433 3M-K6098 M122 3M-K-6098
    Text: SD1433 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 470 MHz Figure 1. Package ■ 12.5 VOLTS ■ CLASS C ■ EFFICIENCY 60% ■ COMMON EMITTER ■ POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications in


    Original     		PDF SD1433 SD1433 transistor M122 3M-K6098 M122 3M-K-6098

    SD1275-1

    Abstract: M113 SD1275-01
    Text: SD1275-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 40 W MIN. WITH 9.0 dB GAIN DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for


    Original     		PDF SD1275-01 SD1275-01 SD1275-1 SD1275-1 M113

    choke vk200

    Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
    Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM


    Original     		PDF SD1460 SD1460 choke vk200 VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics

    CPM13B

    Abstract: Arco 403
    Text: SD1459 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS ■ POUT = 20 W MIN. WITH 7.5 dB GAIN


    Original     		PDF SD1459 SD1459 CPM13B Arco 403

    TCC3100

    Abstract: SD1456
    Text: SD1456 TCC3100 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS AB PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION


    Original     		PDF SD1456 TCC3100) SD1456 TCC3100

    capacitor 100uF 63V

    Abstract: No abstract text available
    Text: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF


    Original     		PDF SD1457 SD1457 capacitor 100uF 63V

    Untitled

    Abstract: No abstract text available
    Text: SD1423 RF POWER BIPOLAR TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS FEATURES SUMMARY • 800 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ CLASS AB LINEAR OPERATION ■ POUT = 15 W MIN. WITH 8.0 dB GAIN


    Original     		PDF SD1423 800-960MHZ SD1423 SD1424.

    Untitled

    Abstract: No abstract text available
    Text: SD1274 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN s ct u d o DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF


    Original     		PDF SD1274 SD1274

    SD1274-01

    Abstract: M113 F136
    Text: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for


    Original     		PDF SD1274-01 SD1274-01 M113 F136

    Untitled

    Abstract: No abstract text available
    Text: SD1398 RF POWER BIPOLAR TRANSISTORS 850-960 MHZ APPLICATIONS FEATURES SUMMARY • 850 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ GOLD METALLIZATION ■ POUT = 6.0 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1398 is a gold metallized epitaxial silicon


    Original     		PDF SD1398 SD1398 SD1423 SD1424.

    TH560

    Abstract: No abstract text available
    Text: SD1730 TH560 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 12 dB GAIN


    Original     		PDF SD1730 TH560) SD1730 TH560