STP19N06LFI Search Results

STP19N06LFI Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
STP19N06LFI		STMicroelectronics	N-Channel Enhancement Mode Low Threshold Power MOS Transistor		Original	PDF	154.39KB	7

STP19N06LFI Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STP19N06L Abstract: STP19N06LFI Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY	Original	STP19N06L STP19N06LFI 100oC O-220 ISOWATT220 STP19N06L STP19N06LFI	PDF
0119A Abstract: STP19N06L STP19N06LFI c19a Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY	Original	STP19N06L STP19N06LFI 100oC O-220 ISOWATT220 0119A STP19N06L STP19N06LFI c19a	PDF
Contextual Info: * 5 SGS-THOMSON ¡[LKgraMOeS 7 STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STP19N 06L S TP19N06LFI V dss RDS on Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . . AVALANCHE RUGGED TECHNOLOGY	OCR Scan	STP19N06L STP19N06LFI STP19N TP19N06LFI O-220 ISOWATT22Q	PDF

Catalog Datasheet

Type

Document Tags

PDF

STP19N06L

Abstract: STP19N06LFI
Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY

Original

STP19N06L STP19N06LFI 100oC O-220 ISOWATT220 STP19N06L STP19N06LFI

PDF

0119A

Abstract: STP19N06L STP19N06LFI c19a
Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY

Original

STP19N06L STP19N06LFI 100oC O-220 ISOWATT220 0119A STP19N06L STP19N06LFI c19a

PDF

Contextual Info: * 5 SGS-THOMSON ¡[LKgraMOeS 7 STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STP19N 06L S TP19N06LFI V dss RDS on Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . . AVALANCHE RUGGED TECHNOLOGY

OCR Scan

STP19N06L STP19N06LFI STP19N TP19N06LFI O-220 ISOWATT22Q

PDF