STP6 Search Results

STP6N60FI

Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STP6NB80

Abstract: STP6NB80FP
Contextual Info: STP6NB80 STP6NB80FP N-CHANNEL 800V - 1.6Ω - 5.7A TO-220/TO-220FP PowerMesh MOSFET TYPE • ■ ■ ■ VDSS RDS on ID STP6NB80 800 V < 1.9 Ω 5.7 A STP6NB80FP 800 V < 1.9 Ω 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

stp6nc60fp

Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY

STF6N95K5

Abstract: 16958 std6n95k5 STW6N95K5 6N95K5
Contextual Info: STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK Datasheet — production data Features TAB Type VDSS RDS on max. ID PW STD6N95K5 9A

Contextual Info: STP62NS04Z N-CHANNEL CLAMPED 12mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET ADVANCED DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.014 Ω 40 A (*) TYPICAL RDS(on) = 0.012 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

HA 1137

Abstract: STP60N05 STP60N05FI
Contextual Info: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2

p60n

Abstract: JESD97 P60NH2LL STP60NH2LL
Contextual Info: STP60NH2LL N-channel 24V - 0.010Ω - 40A TO-220 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP60NH2LL 24V <0.011Ω 40A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

STP6LNC60

Abstract: STP6LNC60FP
Contextual Info: STP6LNC60 STP6LNC60FP N-CHANNEL 600V - 1Ω - 5.8A TO-220/TO-220FP PowerMesh II MOSFET TYPE STP6LNC60 STP6LNC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 1.25 Ω < 1.25 Ω 5.8 A 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY

schematic diagram 48v dc motor 200A speed control

Abstract: STP60NF06 STP16NF06 STP16NF06FP STP60NF06FP *p60nf06
Contextual Info: STP16NF06 STP16NF06FP N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET II POWER MOSFET TYPE STP16NF06 STP60NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V <0.1 Ω <0.1 Ω 16 A 11 A TYPICAL RDS(on) = 0.08Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC

Contextual Info: STP6NB80 STP6NB80FP N - CHANNEL 800V -1.6 iî - 5.7A - T0-220/T0-220FP _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP6NB 80 STP6N B 80FP • . . . . V dss RDS on Id 800 V 800 V < 1 .9 Q. < 1 .9 Cl 5 .7 A 5 .7 A TYPICAL RDS(on) = 1 .6

Contextual Info: STP6NB25 STP6NB25FP N - CHANNEL 250V - 0.9Î2 - 6A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE STP 6N B25 S TP 6N B25FP • . . . . V dss RDS on Id 250 V 250 V < 1 .1 Q < 1 .1 Q 6 A 3.7 A TYPICAL R D S ( o n ) = 0.9 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SGS-THOMSON STP6NB50 STP6NB50FP raoœ@IILiCTMII S N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STP6NB50 STP6NB50FP • . . . . V dss RoS on Id 500 V 500 V < 1.5 n < 1.5 a 5.8 A 3.4 A TYPICAL RDS(on) = 1.35 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STP60NS04Z N - CHANNEL CLAMPED 10m ^ - 60A - T0-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60N S04Z V dss R dS oii Id CLAM PED < 0 .0 1 5 Q. 60 A . . TYPICAL RDS(on) =0.010 £2 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE

P channel MOSFET 10A

Abstract: stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca STP6308 marking 6l SC70-6L p channel mosfet 10a 20v
Contextual Info: P630 8 ST STP 6308 Dual P Channel Enhancement Mode MOSFET -1.0A DESCRIPTION STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

STP6NB25

Abstract: STP6NB25FP DSASW003744
Contextual Info: STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS on ID STP6NB25 250 V < 1.1 Ω 5A STP6NB25FP 250 V < 1.1 Ω 5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STP62NS04Z N-CHANNEL CLAMPED 11mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TARGET DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.014 Ω 40 A (*) TYPICAL RDS(on) = 0.011 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

P6NC60FP

Abstract: P6NC60 p6nc60f STP6NC60FP stp6nc60fp equivalent STP6NC60FP Application Notes STP6NC60 P6NC l289 TO-220FP-3
Contextual Info: STP6NC60 STP6NC60FP  N - CHANNEL 600V - 1.0 Ω - 6A TO-220/TO-220FP PowerMESHΙΙ MOSFET TYPE ST P6NC60 ST P6NC60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V <1.2 Ω <1.2 Ω 6A 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

6NC60

Abstract: STP6NC60 welding smps schematic N-Channel mosfet 600v 36A stp6nc60fp equivalent STB6NC60-1 STP6NC60FP
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY

STP6NB80

Abstract: STP6NB80FP
Contextual Info: STP6NB80 STP6NB80FP N-CHANNEL 800V - 1.6Ω - 5.7A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS on ID STP6NB80 800 V < 1.9 Ω 5.7 A STP6NB80FP 800 V < 1.9 Ω 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STP4803PYM

Abstract: STP6003PYM STP2083PYM SP180U SP275U STP4803PHM 4Pole Ferraz Shawmut STP6003 microswitch subminiature
Contextual Info: Surge-Trap Pluggable SPD Four Pole - Data Sheet Application Fail-Safe For Four Pole Applications & Systems STP2083PYM, STP4803PYM, STP6003PYM, STP2403PHM, STP4803PHM The Surge-Trap Pluggable SPD provides advanced overvoltage protection by utilizing Ferraz

6NC60

Abstract: STP6NC60 STP6NC60FP stp6nc60fp equivalent STB6NC60-1
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

P6NK50Z

Abstract: P6NK50 D6NK50 D6NK STF6NK50Z STP6NK50Z
Contextual Info: STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.98Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP6NK50Z STF6NK50Z STD6NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 1.2 Ω < 1.2 Ω < 1.2 Ω

p6nk90zfp

Abstract: p6nk90z p6nk90 B6NK90Z STP6NK90ZFP p6nk90zf b6nk90 p6nk STP6NK90Z B6NK9
Contextual Info: STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z • ■ ■ ■ ■ ■ V DSS R DS on ID Pw 900 V 900 V 900 V <2Ω <2Ω <2Ω 5.8 A 5.8 A

STP6NC60

Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY