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    STPSC Price and Stock

    STMicroelectronics STPSC6H065B-TR

    DIODE SIL CARBIDE 650V 6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC6H065B-TR Reel 5,000 2,500
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    Arrow Electronics () STPSC6H065B-TR 15,000 19 Weeks 2,500
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    • 10000 $0.8667
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    STPSC6H065B-TR Cut Strips 400 19 Weeks 1
    • 1 $0.9488
    • 10 $0.9436
    • 100 $0.933
    • 1000 $0.9278
    • 10000 $0.9278
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    Newark STPSC6H065B-TR Cut Tape 4 1
    • 1 $2.9
    • 10 $2.13
    • 100 $1.71
    • 1000 $1.5
    • 10000 $1.5
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    STMicroelectronics STPSC6H065B-TR 4,625 1
    • 1 $2.51
    • 10 $1.69
    • 100 $1.23
    • 1000 $1.05
    • 10000 $1.05
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    Avnet Silica STPSC6H065B-TR 2,500 17 Weeks 2,500
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    Vyrian STPSC6H065B-TR 4,320
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    STMicroelectronics STPSC20H12G-TR

    DIODE SIL CARB 1200V 20A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () STPSC20H12G-TR Digi-Reel 4,556 1
    • 1 $9.97
    • 10 $6.864
    • 100 $5.6128
    • 1000 $5.6128
    • 10000 $5.6128
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    STPSC20H12G-TR Cut Tape 4,556 1
    • 1 $9.97
    • 10 $6.864
    • 100 $5.6128
    • 1000 $5.6128
    • 10000 $5.6128
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    STPSC20H12G-TR Reel 4,000 1,000
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    • 1000 $4.58562
    • 10000 $4.58562
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    Newark STPSC20H12G-TR Cut Tape 1,893 1
    • 1 $12.04
    • 10 $9.57
    • 100 $7.81
    • 1000 $7.28
    • 10000 $7.28
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    Vyrian STPSC20H12G-TR 2,722
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    STMicroelectronics STPSC8H065BY-TR

    DIODE SIL CARBIDE 650V 8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () STPSC8H065BY-TR Digi-Reel 4,138 1
    • 1 $3.91
    • 10 $2.564
    • 100 $1.7997
    • 1000 $1.6065
    • 10000 $1.6065
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    STPSC8H065BY-TR Cut Tape 4,138 1
    • 1 $3.91
    • 10 $2.564
    • 100 $1.7997
    • 1000 $1.6065
    • 10000 $1.6065
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    STPSC8H065BY-TR Reel 2,500 2,500
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    • 10000 $1.3125
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    STMicroelectronics STPSC8H065BY-TR 1
    • 1 $3.83
    • 10 $2.51
    • 100 $1.76
    • 1000 $1.57
    • 10000 $1.57
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    Avnet Silica STPSC8H065BY-TR 5,000 17 Weeks 2,500
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    Vyrian STPSC8H065BY-TR 4,172
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    STMicroelectronics STPSC10H12G2-TR

    DIODE SIL CARB 1.2KV 10A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC10H12G2-TR Cut Tape 1,035 1
    • 1 $6.29
    • 10 $4.224
    • 100 $3.0528
    • 1000 $3.04838
    • 10000 $3.04838
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    Newark STPSC10H12G2-TR Cut Tape 204 1
    • 1 $6.98
    • 10 $5.34
    • 100 $4.35
    • 1000 $3.96
    • 10000 $3.96
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    Vyrian STPSC10H12G2-TR 766
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    STMicroelectronics STPSC20H12GY-TR

    DIODE SIL CARB 1200V 20A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC20H12GY-TR Reel 1,000 1,000
    • 1 -
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    • 1000 $5.85388
    • 10000 $5.85388
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    STMicroelectronics STPSC20H12GY-TR 413 1
    • 1 $10.51
    • 10 $7.4
    • 100 $6.69
    • 1000 $6.57
    • 10000 $6.57
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    Avnet Silica STPSC20H12GY-TR 1,000 17 Weeks 1,000
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    Vyrian STPSC20H12GY-TR 3,636
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    Find more STPSC price and stock on Findchips.com

    STPSC Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    STPSC10065D
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 413.33KB
    STPSC10065DLF
    		STMicroelectronics 650 V 10 A POWER SCHOTTKY SILICO Original PDF 400.68KB
    STPSC10065DY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 415.5KB
    STPSC10065G2-TR
    		STMicroelectronics 650 V POWER SCHOTTKY SILICON CAR Original PDF 398.9KB
    STPSC10065GY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODES AND RECTIFIERS Original PDF 415.5KB
    STPSC1006D
    		STMicroelectronics 600 V power Schottky silicon carbide diode Original PDF 85.34KB 7
    STPSC1006G-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 10A D2PAK Original PDF 8
    STPSC10C065RY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF 211.07KB
    STPSC10H065B-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A DPAK Original PDF 14
    STPSC10H065BY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF 227.14KB
    STPSC10H065D
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO220AC Original PDF 14
    STPSC10H065DI
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO-220AC Original PDF 14
    STPSC10H065DLF
    		STMicroelectronics DIODES AND RECTIFIERS Original PDF 409.37KB
    STPSC10H065DY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 433.81KB
    STPSC10H065G2-TR
    		STMicroelectronics 650 V, 10 A HIGH SURGE SILICON C Original PDF 386.81KB
    STPSC10H065G-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A D2PAK Original PDF 14
    STPSC10H065GY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHTY SIC 650V 10A D2PAK Original PDF 433.81KB
    STPSC10H12B2-TR
    		STMicroelectronics 1200V, 10A, SILICON CARBIDE POWE Original PDF 223.42KB
    STPSC10H12B-TR1
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A DPAK Original PDF 483.84KB
    STPSC10H12CWL
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 1200V TO247 Original PDF 335.64KB

    STPSC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STPSC1006D

    Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		STPSC1006 O-220AC STPSC1006any STPSC1006D PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		STPSC16H065C O-220AB STPSC16H065CT DocID024810 PDF

    STPSC606D

    Abstract: STPSC606 STPSC606G-TR STPSC606G
    Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power


    Original     		STPSC606 O-220AC STPSC606D STPSC606G STPSC606D STPSC606 STPSC606G-TR STPSC606G PDF

    STPSC

    Abstract: 8a650
    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power


    Original     		STPSC8H065 STPSC 8a650 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 PDF

    Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC20H065C O-220AB STPSC20H065CT DocID023605 PDF

    Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC8H065C O-220AB STPSC8H065CT DocID024808 PDF

    STPSC806

    Abstract: STPSC806D STPSC806G-TR
    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC806 O-220AC STPSC806D STPSC806 STPSC806D STPSC806G-TR PDF

    Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		STPSC2006CW O-247 PDF

    STPSC1206D

    Abstract: STPSC1206 16288
    Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		STPSC1206 STPSC1206D STPSC1206 16288 PDF

    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 PDF

    Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 PDF

    Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC6TH13TI DocID024696 PDF

    STPSC20H065C

    Abstract: STPSC20H065CW diode 1.e
    Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1


    Original     		STPSC20H065C STPSC20H065C STPSC20H065CW diode 1.e PDF

    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC806 O-220AC STPSC806D PDF

    STPSC1006D

    Abstract: JESD97
    Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		STPSC1006D O-220AC STPSC100n STPSC1006D JESD97 PDF

    STPSC2006

    Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
    Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		STPSC2006CW O-247 STPSC2006 STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 PDF

    Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		STPSC16H065C O-220AB STPSC16H065CT DocID024810 PDF

    Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC12H065C O-220AB STPSC12H065CT DocID024809 PDF

    STPSC1006D

    Abstract: STPSC1006G 16-2-87
    Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87 PDF

    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC806 O-220AC STPSC806D PDF