STRH40N6 Search Results
STRH40N6 Price and Stock
STMicroelectronics STRH40N6S1Trans MOSFET N-CH 60V 30A 3-Pin SMD - Bulk (Alt: STRH40N6S1) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STRH40N6S1 | Bulk | 111 Weeks | 10 |
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STRH40N6S1 | 17 Weeks | 1 |
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STRH40N6S1 | 497 |
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STMicroelectronics STRH40N6SG- Bulk (Alt: STRH40N6SG) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STRH40N6SG | Bulk | 111 Weeks | 10 |
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STRH40N6 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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STRH40N6SY1
Abstract: JESD97 STRH40N6SY3
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STRH40N6SY1 STRH40N6SY3 100kRad 34Mev/cm STRH40N6SY1 JESD97 STRH40N6SY3 | |
Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization |
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STRH40N6SY3 | |
RAD SMD MARKING CODE
Abstract: smd diode marking code TO3
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STRH40N6 STRH40N6S1 DocID18351 RAD SMD MARKING CODE smd diode marking code TO3 | |
st smd diode marking to3Contextual Info: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications |
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STRH40N6 STRH40N6S st smd diode marking to3 | |
smd DIODE code marking 20A
Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
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STRH40N6SY3 100kRad 34Mev/cm smd DIODE code marking 20A smd code diode 20a STRH40N6SY1 STRH40N6SY3 | |
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications |
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STRH40N6 STRH40N6S1 STRH40N6SG | |
Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge |
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STRH40N6SY3 100kRad 34Mev/cm | |
HV33010Contextual Info: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite ■ High reliability |
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STRH40N6 STRH40N6S1 STRH40N6SG HV33010 | |
st smd diode marking to3
Abstract: 0301 smd STRH40N6SG
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STRH40N6 STRH40N6S st smd diode marking to3 0301 smd STRH40N6SG | |
st smd diode marking to3
Abstract: smd diode marking code TO3 mosfet SMD MARKING CODE 352 STRH40N6 STMicroelectronics smd DIODE marking code smd st diode marking to3 STRH40N6SY1 smd diode order marking code stmicroelectronics smd K 739 mosfet
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STRH40N6 STRH40N6SY1 st smd diode marking to3 smd diode marking code TO3 mosfet SMD MARKING CODE 352 STRH40N6 STMicroelectronics smd DIODE marking code smd st diode marking to3 STRH40N6SY1 smd diode order marking code stmicroelectronics smd K 739 mosfet | |
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications |
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STRH40N6 STRH40N6S1 | |
STRH40N6SGContextual Info: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications |
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STRH40N6 STRH40N6S1 STRH40N6SG STRH40N6SG | |
st smd diode marking to3Contextual Info: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite |
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STRH40N6 STRH40N6S1 STRH40N6S st smd diode marking to3 | |
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications |
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STRH40N6 STRH40N6S1 | |
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