STT 433 Search Results

E1115

Contextual Info: MICRON SE MICONDUCTOR INC b?E D BB fe1115 4'ì OOOTHSfl STT tB MRN ADVANCE MT5LC1001 1 MEG X 1 SRAM M IC R O N SRAM 1 MEG X 1 SRAM LOW VOLTAGE • All I /O pins are 5V tolerant • High speed: 15,17,20,25, 35 and 45ns • High-performance, low-power, CMOS double-metal

10K J

Abstract: 082B HJM072 NJM072B tl o82 tl 072
Contextual Info: NJM072B/082B, 072/082 2 B K A y J - F E T A * * - ^ > is t NJMQ72B/082B, «JM072/0821Ì , ^ 7 > 7 'T 'Ä ^ ^ - U - K » ftT U S * S À i i 'i v f - y v x , W ftt L, Ì C Z - f X, S ^ C I W L T Stt. 16A * * 7 -fe -y i > f $ S I ] < 7 i E J l £ « <b -P T l ' * T o

STT-111

Contextual Info: REV. Status ISSUE 1 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 130 ^H MAX 2. DC Resistance; Primary (1 - 2 ) 5.0 Q MAX Secondary (3 - 4 ) 2.5 0 MAX Tertiary (5 - 6 ) 2.5 Q MAX 3. Primary ET-constant; 200V- f i s MIN 4. Turns Ratio;

Contextual Info: REV. Status ISSUE 1 8 /8 /9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 30 /iH MAX 2. DC Resistance; Primary (1 -2 ) 2.5 Q MAX Secondary (3 -4 ) 1.5 0 MAX Tertiary (5 -6 ) 1.5 0 MAX 3. Primary ET-constant; 9 0 V - ^ s MIN 4. Turns Ratio;

STT-101

Contextual Info: R EV. S ta t u s ISSUE 1 6 / 3 / 9 2 TS ISSUE 2 8 / 2 0 / 9 2 TS ISSUE 3 TEMECULA WAS CARSON ADDED NOTE 7 & DATE CODE 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C o 1. Leakage Inductance; 15/a H MAX 2. DC Resistance; Primary (1-2) 2.5 Q MAX Secondary (3—4) 2.5 0 MAX

STT-106

Contextual Info: REV. S ta tu s A. Electrical specifications @ 25 ° C ISSUE 1 8 /8 /9 5 TS CD O 1. Leakage Inductance; 200 ^ H MAX 2. DC Resistance; Primary ( 1 - 2 ) 7.0 Q MAX Secondary ( 3 - 4 ) 7.0 0 MAX Tertiary ( 5 - 6 ) 7.0 Q MAX 3. Primary ET-constant; 2 8 0 V - f i s MIN

trigger transformer

Abstract: STT-112 A1122-1 800PF
Contextual Info: REV. S ta tu s REVISION 8 /2 7 /9 9 TS Encapsulated Trigger Transformer C£ A. Electrical specifications @ 25° C Ld 1. Leakage Inductance; 200//H MAX 2. DC Resistance; Primary (1 - 2 ) 7.0Q MAX Secondary (3 - 4 ) 3.50 MAX Tertiary (5 - 6 ) 3.50 MAX 3. Prim ary ET—constant;

STT-104

Abstract: trigger transformer
Contextual Info: REV. S ta tu s A. Electrical specifications @ 25 ° C ISSUE 1 8 /8 /9 5 TS o 1. Leakage Inductance; 25 /iH MAX 2. DC Resistance; Primary ( 1 - 2 ) 2.5 Q MAX Secondary ( 3 - 4 ) 2.5 0 MAX Tertiary ( 5 - 6 ) 2.5 Q MAX 3. Primary ET-constant; 9 0 V - ^ s MIN

STT-102

Abstract: P-A1-10698
Contextual Info: REV. S ta tu s ISSUE 1 6/3/92 TS ISSUE 2 8/20 /92 TS ISSUE 3 TEMECULA WAS CARSON 6/15/95 TS ISSUE 4 ADDED NOTE 7 REV DIMS 6/27/95 TS A. Electrical specifications @ 25 ° C OL Ld CD 1. Leakage Inductance; 50 /i H MAX 2. DC Resistance; Primary ( 1 - 2 ) 5.0 Q MAX

STT-105

Contextual Info: REV. Status ISSUE 1 6 / 2 2 / 9 2 TS ISSUE 2 TEMECULA WAS CARSON ADDED NOTE 7 & DATE CODE 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C ID O 1. Leakage Inductance; 100 ^H MAX 2. DC Resistance; Primary (1 -2 ) 5.0 Q MAX Secondary (3 -4 ) 5.0 0 MAX

Marking Code 3E

Abstract: STT-108
Contextual Info: REV. Status IS S U E 1 6 / 3 / 9 2 TS A. Electrical specifications @ 25 ° C 00 o 1. Leakage Inductance; 6 0 / ¿H MAX IS S U E 2 8 / 2 0 / 9 2 TS IS S U E 3 TEM ECULA W AS C A R SO N A D D E D NO TE 7 <3e DATE C O D E 8 / 7 / 9 5 TS T 2. DC Resistance;

STT-103

Contextual Info: REV. S ta tu s IS S U E 1 6 / 3 / 9 2 TS IS S U E 2 8 / 2 0 / 9 2 TS IS S U E 3 TEM ECULA W AS C A R SO N A D D E D NO TE 7 <3e DATE C O D E 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C K) O 1. Leakage Inductance; 100 ^H MAX 2. DC Resistance; Primary (1 -2 ) 7.0 Q MAX

STT-107

Abstract: trigger transformer
Contextual Info: REV. Status IS S U E 1 7 / 8 / 9 2 TS IS S U E 2 TEM ECULA W AS C A R SO N A D D E D NO TE 7 & DATE C O D E 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 2 0 /¿H MAX 2. DC Resistance; Primary (1 -2 ) 2.5 Q MAX Secondary (3—4) 1.5 0 MAX

STT-109

Abstract: 10717
Contextual Info: REV. Status A. Electrical specifications @ 25 ° C IS S U E 1 7 / 8 / 9 2 TS <J) o 1. Leakage Inductance; 130 ^ H MAX 2. DC R esistance; Prim ary ( 1 - 2 ) 7.0 Q MAX Se cond ary (3 — 4) 3.5 0 MAX 3. Prim ary ET— constant; 2 8 0 V - f i s MIN 4. Turns Ratio;

STT 433

Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium

STT 433

Contextual Info: Preliminary Radiation Hardened 204ARPQ Fibre C h a n n e l R e c e iv e r For Space Applications 1 DATA HCHNP % S rI »IDOVTÏ10:0| HOîNN El's 204ARPQ RP for HDLF1NP CLOCK 2/ r * DATA HOLPJNN RAD-PAK high speed Fi­ RECl CLOCK LPBKEN -bre Channel Receiver inte­

Contextual Info: b S G l l S P aQTflTEt, bS2 NSC1 o National Semiconductor PRELIMINARY General Description Features This minimum skew clock driver is designed for Clock Gen­ eration and Support CGS applications operating from 33 MHz to 80 MHz. The devices guarantee minimum output

philips ferrite material specifications 12nc

Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency

U19193E

Abstract: cmps a42 transistor U17792E ptc100 R01UH0119EJ0300 F0103H nec f0123h SLC-101 transistor P40 NF 10L SLC101
Contextual Info: User’s Manual 16 PD78F8040, 78F8041, 78F8042, 78F8043 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: Ordering number EN4335A Monolithic Linear IC LA4800V Stereo Headphone Power Amplifier Overview Package Dimensions The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for

TMC0281

Abstract: NMI120 Tmc028 CLD271 es051 OVF20 PM581 y455 cms P32 sot 23 IMS05
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: Preliminary User’s Manual 78K0R/KF3-L 16-bit Single-Chip Microcontrollers PD78F1010 μPD78F1011 μPD78F1012 Document No. U19459EJ1V0UD00 1st edition Date Published December 2008 NS 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U19459EJ1V0UD

Contextual Info: Preliminary User’s Manual 78K0R/KG3-L 16-bit Single-Chip Microcontrollers PD78F1013 μPD78F1014 Document No. U19460EJ1V0UD00 1st edition Date Published November 2008 NS 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U19460EJ1V0UD NOTES FOR CMOS DEVICES

Contextual Info: Preliminary User’s Manual 78K0R/Kx3-L 16-bit Single-Chip Microcontrollers PD78F1000 μPD78F1001 μPD78F1002 μPD78F1003 μPD78F1004 μPD78F1005 μPD78F1006 μPD78F1007 μPD78F1008 μPD78F1009 Document No. U19291EJ1V0UD00 1st edition Date Published July 2008 NS