STW9N Search Results

STW9NB90

Contextual Info: STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH MOSFET TYPE STW9NB90 • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V <1Ω 9.7 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STW9N150

Abstract: JESD97 W9N150V
Contextual Info: STW9N150 N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID Pw STW9N150 1500V < 2.7Ω 8A 350W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized

9NB80

Abstract: STW9NB80
Contextual Info: STW9NB80  N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE STW 9NB80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <1Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: STW9NB80 N - CHANNEL 900V - 0.85ft - 9.3A - TO-247 _ PowerMESH MOSFET ADVANCE DATA V dss TYPE STW 9N B80 • . . . . 800 V R D S o n < 1 .1 a Id 9.3 A TYPICAL RDS(on) = 0.85 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

w9na60

Abstract: ATT218 H9NA60FI STW9NA60 9na60 STH9NA60FI TRANSISTOR FS 2025
Contextual Info: STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST W9NA60 ST H9NA60FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.5 A 6.4 A TYPICAL RDS(on) = 0.69 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

STH9NA80FI

Contextual Info: i, One. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE STW9NA80 STH9NA80FI VDSS 800 V 800 V

w9nk70z

Abstract: P9NK70Z p9nk70zfp b9nk70z STP9NK70Z P9NK70 w9nk70z equivalent w9nk70 B9NK70Z-1 STW9NK70Z
Contextual Info: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on

MOSFET 800V 3A

Abstract: STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram
Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V < 1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

9NB90

Abstract: DSA003977 smps Power Supply Schematic Diagram STW9NB90
Contextual Info: STW9NB90  N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH MOSFET TYPE STW 9NB90 • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V <1Ω 9.7 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances

W9NA80

Abstract: H9NA80FI h9na80 9NA80 STW9NA80-STH9NA80FI STH9NA80FI STW9NA80
Contextual Info: STW9NA80 STH9NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS PRELIMINARY DATA V DSS R DS on ID ST W9NA80 TYPE 800 V < 1.0 Ω 9.1 A ST H9NA80FI 800 V < 1.0 Ω 5.9 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

W9NK90Z

Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
Contextual Info: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z

Contextual Info: STEVAL-ISA054V1 100 W 3-phase auxiliary power supply demonstration board based on the STW9N150 Features • Input voltage – connector 1: 400 Vac RMS ± 20% ■ Input voltage – connector 2: 180 - 265 Vac RMS ■ Input frequency: 50 Hz ■ Output 1: 24 V @ 4 A

STW9NB80

Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

smd 2sd882

Abstract: 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v
Contextual Info: UM0674 Application note STEVAL-ISA054V1, 100 W SMPS based on the STW9N150 Power MOSFET and UC3844B for industrial applications Introduction This document introduces a solution for industrial power supplies. It takes advantage of the high voltage Power MOSFET, i.e. 1500 V breakdown voltage, to optimize the operation of

Contextual Info: STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85ÎÎ - 9.1 A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE S TW 9N A 80 S TH 9N A80FI • . . . . . . V dss R D S o n Id 800 V 800 V < 1 .o n < 1 .o n 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING

w9nk70z

Abstract: P9NK70Z P9NK70ZFP B9NK70Z w9nk70z equivalent P9NK70 w9nk70 STP9NK70Z STW9NK70Z STP9NK70ZFP
Contextual Info: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS R DS on

W9NK90Z equivalent

Abstract: P9NK90 P9NK90Z mosfet 8A 900V TO-220
Contextual Info: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z

STW9NC80Z

Contextual Info: STW9NC80Z N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC80Z n n n n n n VDSS RDS on ID 800 V <0.9Ω 9.4 A TYPICAL RDS(on) = 0.82Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

W9NK90Z

Abstract: p9nk90 p9nk W9NK90Z equivalent P9NK90Z STB9NK90Z STP9NK90 MOSFET 900V 8A TO-220 STW9N STW9NK90Z
Contextual Info: STB9NK90Z, STF9NK90Z STP9NK90Z, STW9NK90Z N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max. ID Pw STB9NK90Z 160 W STW9NK90Z 160 W STP9NK90Z 900V <1.3Ω STF9NK90Z • Extremely high dv/dt capability

STW9NK95Z

Abstract: ST 9NK95Z 9nk95z 9nk95 STW9NK95 BE 441-A JESD97
Contextual Info: STW9NK95Z N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on Max ID Pw STW9NK95Z 950 V < 1.38 Ω 7A 160 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ 2 3 1 Gate charge minimized

9N150

Abstract: STW9N150 8A720 JESD97 9n15
Contextual Info: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances

9NA80FI

Contextual Info: SGS-THOMSON !LiM iO gS STW9NA80 STH9NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss RDS(on Id STW 9N A80 800 V < 1.0 Q 9.1 A S TH 9N A80FI 800 V < 1.0 Q. 5.9 A • rn . . . . . TYPICAL RDS(on) = 0.85 Q ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STW9NC80Z N-CHANNEL 800V - 0.75Ω - 9.3A TO-247 Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE STW9NC80Z • ■ ■ ■ ■ ■ VDSS RDS on ID 800 V <0.9Ω 9.3 A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES