SU 179 08 89 Search Results

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

of all 74 ic series

Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
Contextual Info: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S

transistor 86 y 87

Abstract: 2SC3139 2SC3141
Contextual Info: NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION • HIGH LINEAR POWER N EC 's N E L 0 8 0 0 series of N P N epitaxial U H F pow er transis­ tors is designed for linear operation in the 5 0 0 to 1000 M Hz

2SC3140

Abstract: L0801
Contextual Info: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis­ tors is designed fo r linear operation in the 500 to 1000 MHz

NC921

Abstract: ne41635 NE41607 NE41612-1
Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ • LOW NOISE FIGURE: 1 dB at 70 MHz linearity. The NE416 series is available in a wide selection of package styles and in chip form for thin and thick film circuits. Most package styles are available with screening levels through

NE64535

Abstract: NE64500 nec08 2SC2585 NE645 2SC2273 0/2SC2585 mig mag 200 NE64508 s2212
Contextual Info: S bE N E C/ CALIFORNIA NEC D • b M 2 7 L tm 0 D 0 2 M 2 2 bDfl H N E C C NE64500 NE64508 NE64535 NE64587 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURED DESCRIPTION AND APPLICATIONS • HIGH fr fr = 8.5 GHz The NE645 series of NPN silicon transistors is designed for

2SC1253

Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­

1400

Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
Contextual Info: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)

TPM1919-40

Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point

NE8004

Abstract: NE800495-4
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •

ne8004 FET

Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY

2SC3584

Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Contextual Info: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

SAA 1006

Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression

2SC2037

Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
Contextual Info: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable

bq 738

Abstract: Bq 737 cn/A/U 237 BG
Contextual Info: P4SMA6V8. P4SMA440A P4SMA6V8C. P4SMA220C 400 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. Voltage 6.8 to 300 V CASE: SMA/DO-214AC Power 400 W/ms R • • • • • • • Glass passivated junction

Contextual Info: K l HEWLETT mltiM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0270 F eatures • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k > l • Herm etic Gold-ceramic

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

40MAG

Abstract: NE57510
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIG H O S C ILLA TO R PO W ER O U TPU T: 700 m W at 1.7 G Hz The NE575 series of NPN silicon medium powertransistors is designed to operate in amplifiers and oscillators up to 2 GHz

6389G50

Abstract: SIEMENS tle 420 TLE 4242 G Daelim 4269 HATTELAND TLE6389G50-1 4299G HB sot23 6389GV
Contextual Info: Ultimate POWER – Perfect Control COMPLETE Automotive Solutions from Infineon www.infineon.com/power Never stop thinking. Introduction Power and control – combine your success T H E E V E R I N C R E A S I N G level of power and control needed in automotive electronics is driving innovation in modern vehicles.

Contextual Info: H E W L E T T - P A C K A R D / C M PN TS Whpt H E W L E T T WHiM P A C K A R D blE D • MM475flM O O l O O b J Ofll HPA MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers SOT-143 Package Features • Cascadable 50 f2 Gain Block

MSA0270

Contextual Info: Wfipl HEW LETT mHHMPACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0270 F eatures • C ascadable 50 Q Gain B lock • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB T ypical G ain a t 1.0 GHz • U n co n d ition ally S ta b le k > l • H erm etic G old-ceram ic

ATF-35576

Abstract: ATF-35576-TR2 ATF35576
Contextual Info: HEWLETT —PACKARD/ CMPNTS blE D H EW LETT wLeA PACKARD • 4 4 4 7 5 A 4 □ D D tìeì4fl QT3 H H P A ATF-35576 2-18 GHz Low Noise Pseudomorphic HEMT Features 7 6 Package • PHEMT Technology • High Gain at Moderate Noise Figure: G = 12 dB Typ, NF = 2.0 dB Max @ 12 GHz