SUB45N03 Search Results

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L

Contextual Info: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 20 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET

Contextual Info: SUP/SUB45N03-13L VISHAY Siliconix T N-Channel 30-V D-S , 175°C MOSFET New Product r DS(ON) V (BR)DSS (V) 30 \\0 * « * £ ° ’ PRODUCT SUMMARY •d (A) (-2) 0.013 @ V GS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D Q TO-220AB o .Jl TO-263 < 1 G D S DRAIN connected to TAB

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

8205

Abstract: 8205 A 8205 datasheet AN609 SUB45N03-13L
Contextual Info: SUB45N03-13L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

The subcircuit model was extracted and optimized

Abstract: SUB45N03
Contextual Info: SPICE Device Model SUB45N03 N-Channel 30-V D-S , 175°C MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

SUB45N03-13L

Abstract: 45ANS
Contextual Info: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY V(BR)DSS (V) 30 RDS(ON) (W) ID (A) 0.013 @ VGS = 10 V 45A 0.02 @ VGS = 4.5 V 45A D TO-263 G G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB45N03-13L

Abstract: 13L diode
Contextual Info: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB45N03-13L

Contextual Info: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB45N03-13L

Abstract: S-05010-Rev
Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L

Contextual Info: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175°C MOSFET New Product IQ * « * £ ° ’ PRODUCT SUM M ARY r DS(ON) V (BR)DSS (V) (-2) HP1 \\o * y*6 •d (A) 0.013 @ V GS = 10 V 45a 0.02 @ VGS = 4.5 V 45a 30 D Q TO-263 r i n G D S Top View o s SUB45N03-13L

SUB45N03-13L

Abstract: SUP45N03-13L W45A
Contextual Info: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

LX1684CD-TR

Abstract: LM78L05 LX1682 LX1684 LX1684CD vishay power pak SO-8 package dimension MBR2545
Contextual Info: LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Fixed 175kHz Switching Frequency ƒ Constant Frequency VoltageMode Control Requires No External Compensation ƒ Hiccup-Mode Over-Current Protection ƒ High Efficiency

Contextual Info: Not Recommended For New Design LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors.

DIN 45326 MALE

Abstract: MBR052LT1 AD820 ADP3159 ADP3159JRU ADP3179 ADP3179JRU RU-20 SUB45N03-13L sub75n03-07
Contextual Info: a FEATURES Optimally Compensated Active Voltage Positioning with Gain and Offset Adjustment ADOPT for Superior Load Transient Response Complies with VRM 8.4 Specifications with Lowest System Cost 4-Bit Digitally Programmable 1.3 V to 2.05 V Output N-Channel Synchronous Buck Driver

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

MBR052LT1

Abstract: AD820 ADP3158 ADP3158JR ADP3178 ADP3178JR PHILIPS toroidal core 3f3
Contextual Info: a FEATURES Optimally Compensated Active Voltage Positioning with Gain and Offset Adjustment ADOPT for Superior Load Transient Response Complies with VRM Specifications with Lowest System Cost 4-Bit Digitally Programmable 1.3 V to 2.05 V Output N-Channel Synchronous Buck Driver