SUB65P04 Search Results

TO263

Abstract: SUB65P04-15 SUP65P04-15
Contextual Info: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15

Contextual Info: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S

Contextual Info: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S

mosfet 4456

Abstract: AN609 SUB65P04-15
Contextual Info: SUB65P04-15_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S

SUB65P04-15

Abstract: SUP65P04-15
Contextual Info: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15

sub65p04

Contextual Info: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S

Contextual Info: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S

SUB65P04-15

Abstract: SUP65P04-15
Contextual Info: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

sum45n25

Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
Contextual Info: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)