SUBSTRATE TEFLON-GLASS ER 2.55 Search Results

copper permittivity

Abstract: MLC092
Contextual Info: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN 1 • Interdigitated structure provides high emitter efficiency

Contextual Info: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C

capacitor J400

Abstract: Motorola Potentiometer cd 740 chip smd transistor A1 sot-23 smd UJ 99 BC847 GSM1900 GSM1930 LP2951 MRF18060
Contextual Info: MOTOROLA O rder this docum ent by M RF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18060B M R F18060B S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

DIODE 4005

Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE
Contextual Info: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

NF4-5V

Abstract: capacitor feed-through ERIE ceramic capacitor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.

DIODE aay 49

Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
Contextual Info: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

push pull class AB RF linear

Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE
Contextual Info: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING POUT = 150 W MIN. WITH 6.5 dB GAIN

SD1732

Abstract: TDS595 s3 vision LCC capacitor S2
Contextual Info: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

SD1680

Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005
Contextual Info: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

SD1492

Abstract: R767 16 AWG 400S M175 GE DIODE push pull class AB RF linear l21 diode
Contextual Info: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 150 W MIN. WITH 6.5 dB GAIN

erie feedthrough capacitors

Abstract: PLB16012U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors

30mils

Abstract: SD1732 TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54
Contextual Info: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

SD1680

Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE
Contextual Info: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

K 4005 transistor

Contextual Info: f Z 7 ^ 7 # . S G M S - 1 H 0 M » Ê t H ê r a M S 0 N SD1660 O g ! RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . . . . > 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

5q 1265 rf

Abstract: DIODE aay 49
Contextual Info: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

Contextual Info: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

applications of Transistor BDX 54

Abstract: s3 vision
Contextual Info: SD1732 TDS595 RF POWER BIPOLAR TRANSISTORS TV LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION

on 5295 transistor

Abstract: J374 on 5295 mosfet transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier

MF 198 ferrite

Abstract: capacitor j476 capacitor Marking J336
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier

Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

Contextual Info: N AMER PHILIPS/DISCRETE APX bb53T31 0Q3055b bSS BGY96A/B b'lE D UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,

Contextual Info: N AMER PHILIPS/DISCRETE b^E I> • APX bbS3T31 QD3D247 bl2 BGY95A/B UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,

TDS595

Abstract: SD1732 s3 vision
Contextual Info: SD1732 TDS595 RF POWER BIPOLAR TRANSISTORS TV LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION

BGY95B

Abstract: IG17 BGY95A
Contextual Info: BGY95A/B J V UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 7.5 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,