SUP53P06 Search Results

SUP53P06 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SUP53P06-20-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 9.2A TO220AB	Original	PDF		7
SUP53P06-20-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 9.2A TO220AB	Original	PDF		7

SUP53P06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SUP53P06-20 Abstract: SUP53 Contextual Info: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP53P06-20 SUP53	PDF
SUP53P06-20 Contextual Info: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 18-Jul-08 SUP53P06-20	PDF
Contextual Info: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SUP53P06-20 Abstract: SUP53P06-20-E3 SUP53P06 Contextual Info: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 08-Apr-05 SUP53P06-20 SUP53P06-20-E3 SUP53P06	PDF
Contextual Info: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SUP53P06 Abstract: 9842 AN609 SUP53P06-20 Contextual Info: SUP53P06-20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	SUP53P06-20 AN609, 09-May-08 SUP53P06 9842 AN609	PDF
SUP53P06-20 Abstract: S-8205 SUP53P0620 64230 SUP53P06 Contextual Info: SPICE Device Model SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	SUP53P06-20 S-82052-Rev. 01-Sep-08 SUP53P06-20 S-8205 SUP53P0620 64230 SUP53P06	PDF
SUP53P06-20 Abstract: SUP53P06 Contextual Info: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 11-Mar-11 SUP53P06-20 SUP53P06	PDF
Contextual Info: SPICE Device Model SUP53P06-20 www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	SUP53P06-20 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SUP53P06-20 Abstract: SUP53P0620 Contextual Info: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 11-Mar-11 SUP53P06-20 SUP53P0620	PDF
SUP53P06-20 Abstract: S-82052 SUP53 Contextual Info: SPICE Device Model SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	SUP53P06-20 18-Jul-08 SUP53P06-20 S-82052 SUP53	PDF
Contextual Info: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF

Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF