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    SUP53P06 Search Results

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    SUP53P06 Price and Stock

    Vishay Siliconix SUP53P06-20-E3

    MOSFET P-CH 60V 9.2A/53A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUP53P06-20-E3 Tube 3,121 1
    • 1 $3.9
    • 10 $3.9
    • 100 $3.9
    • 1000 $1.36538
    • 10000 $1.30888
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    RS SUP53P06-20-E3 Bulk 500
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    Bristol Electronics SUP53P06-20-E3 400
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    Quest Components SUP53P06-20-E3 320
    • 1 $3.51
    • 10 $3.51
    • 100 $2.34
    • 1000 $2.1645
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    New Advantage Corporation SUP53P06-20-E3 400 1
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    • 100 $1.74
    • 1000 $1.74
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    Vishay Siliconix SUP53P06-20-GE3

    MOSFET P-CH 60V 9.2A/53A TO220AB
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    DigiKey SUP53P06-20-GE3 Tube 500
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    • 1000 $1.18302
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    Vishay Intertechnologies SUP53P06-20-E3

    Trans MOSFET P-CH 60V 9.2A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: SUP53P06-20-E3)
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    Avnet Americas SUP53P06-20-E3 Bulk 13 Weeks 500
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    • 1000 $1.40221
    • 10000 $1.34118
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    Mouser Electronics SUP53P06-20-E3 8,390
    • 1 $3.33
    • 10 $2.48
    • 100 $1.53
    • 1000 $1.39
    • 10000 $1.39
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    Verical SUP53P06-20-E3 1,970 12
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    • 100 $1.775
    • 1000 $1.7375
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    SUP53P06-20-E3 1,318 6
    • 1 -
    • 10 $2.7775
    • 100 $1.3926
    • 1000 $1.2935
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    SUP53P06-20-E3 350 50
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    • 100 $1.942
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    SUP53P06-20-E3 217 5
    • 1 -
    • 10 $2.752
    • 100 $1.392
    • 1000 $1.392
    • 10000 $1.392
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    Arrow Electronics SUP53P06-20-E3 1,318 13 Weeks 1
    • 1 $2.9553
    • 10 $2.7728
    • 100 $1.3903
    • 1000 $1.2913
    • 10000 $1.2913
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    SUP53P06-20-E3 217 13 Weeks 1
    • 1 $2.935
    • 10 $2.752
    • 100 $1.392
    • 1000 $1.392
    • 10000 $1.392
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    Newark SUP53P06-20-E3 Bulk 960 1
    • 1 $2.79
    • 10 $2.65
    • 100 $1.44
    • 1000 $1.42
    • 10000 $1.42
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    TTI SUP53P06-20-E3 Tube 4,250 50
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    • 100 $1.41
    • 1000 $1.33
    • 10000 $1.27
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    TME SUP53P06-20-E3 523 1
    • 1 $2.29
    • 10 $1.81
    • 100 $1.64
    • 1000 $1.52
    • 10000 $1.52
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    Avnet Asia SUP53P06-20-E3 15 Weeks 500
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    Chip1Stop SUP53P06-20-E3 Tube 1,970
    • 1 $2.2
    • 10 $2.11
    • 100 $1.4
    • 1000 $1.37
    • 10000 $1.37
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    EBV Elektronik SUP53P06-20-E3 14 Weeks 50
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    Vishay Intertechnologies SUP53P06-20-GE3

    Trans MOSFET P-CH 60V 9.2A 3-Pin TO-220AB - Tape and Reel (Alt: SUP53P06-20-GE3)
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    Avnet Americas SUP53P06-20-GE3 Reel 500
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    EBV Elektronik SUP53P06-20-GE3 21 Weeks 50
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    Vishay Intertechnologies SUP53P0620GE3

    P-CHANNEL 60-V (D-S) MOSFET Power Bipolar Transistor, 1-Element, P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SUP53P0620GE3 274
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    Find more SUP53P06 price and stock on Findchips.com

    SUP53P06 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP53P06-20-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 9.2A TO220AB Original PDF
    SUP53P06-20-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 9.2A TO220AB Original PDF

    SUP53P06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUP53P06-20

    Abstract: SUP53
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP53P06-20 SUP53

    SUP53P06-20

    Abstract: No abstract text available
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 18-Jul-08 SUP53P06-20

    Untitled

    Abstract: No abstract text available
    Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUP53P06-20

    Abstract: SUP53P06-20-E3 SUP53P06
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 08-Apr-05 SUP53P06-20 SUP53P06-20-E3 SUP53P06

    Untitled

    Abstract: No abstract text available
    Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUP53P06

    Abstract: 9842 AN609 SUP53P06-20
    Text: SUP53P06-20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SUP53P06-20 AN609, 09-May-08 SUP53P06 9842 AN609

    SUP53P06-20

    Abstract: S-8205 SUP53P0620 64230 SUP53P06
    Text: SPICE Device Model SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SUP53P06-20 S-82052-Rev. 01-Sep-08 SUP53P06-20 S-8205 SUP53P0620 64230 SUP53P06

    SUP53P06-20

    Abstract: SUP53P06
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 11-Mar-11 SUP53P06-20 SUP53P06

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP53P06-20 www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SUP53P06-20 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUP53P06-20

    Abstract: SUP53P0620
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 11-Mar-11 SUP53P06-20 SUP53P0620

    SUP53P06-20

    Abstract: S-82052 SUP53
    Text: SPICE Device Model SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SUP53P06-20 18-Jul-08 SUP53P06-20 S-82052 SUP53

    Untitled

    Abstract: No abstract text available
    Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477