SWITCHING TRANSISTOR MSD Search Results

SWITCHING TRANSISTOR MSD Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SWITCHING TRANSISTOR MSD Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJD127G Abstract: No abstract text available Text: MJD122, NJVMJD122 NPN , MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR	Original	PDF	MJD122, NJVMJD122 MJD127, NJVMJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127G
MJD122 Abstract: TIP125-TIP127 mjd122g Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES	Original	PDF	MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g
Untitled Abstract: No abstract text available Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTOR 8 AMPERES	Original	PDF	MJD122, NJVMJD122T4G MJD127 2N6040â 2N6045 TIP120â TIP122 TIP125â TIP127 MJD122/D
MJD122T4G Abstract: TRANSISTOR MJD122 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122
100 amp npn darlington power transistors Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D 100 amp npn darlington power transistors MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120
tip120tip122 Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D tip120tip122 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
MJD127T4 Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4 npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
transistor BF245 Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The	Original	PDF	OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
100MAdc Abstract: motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR	Original	PDF	BD791/D BD791 BD791T O-225 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 100MAdc motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener
MJD127T4G Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
BD791 Abstract: MBR340 MSD6100 Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR	Original	PDF	BD791/D BD791 BD791 MBR340 MSD6100
MOTOROLA TRANSISTOR TO-220 Abstract: 1N5825 221D 2N6107 AN1040 MJF6107 MSD6100 Text: MOTOROLA Order this document by MJF6107/D SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the	Original	PDF	MJF6107/D* MJF6107/D MOTOROLA TRANSISTOR TO-220 1N5825 221D 2N6107 AN1040 MJF6107 MSD6100
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	PDF	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
2N6056 Abstract: 1N5825 MSD6100 Text: ON Semiconductort 2N6056 NPN Darlington Silicon Power Transistor ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS • High DC Current Gain —	Original	PDF	2N6056 r14525 2N6056/D 2N6056 1N5825 MSD6100

motorola p1f Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for	Original	PDF	OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
MMFT6661T1 Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	PDF	Tap218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMFT6661T1 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	PDF	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
FET 2N5458 Abstract: BC547 fet BC237 TO261AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	PDF	MMFT107218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 FET 2N5458 BC547 fet BC237 TO261AA
TSOP 48 thermal resistance Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	PDF	MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington Silicon Power Transistor Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON	Original	PDF	2N6056/D 2N6056
12,000 volt 50 amp diode Abstract: transistor J128 10 amp npn darlington power transistors 16 amp npn darlington power transistors 100 amp npn darlington power transistors NPN Silicon Power Transistor DPAK 1N5825 J128 MJD128T4 MSD6100 Text: MJD128T4 PNP Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors	Original	PDF	MJD128T4 MJD128/D 12,000 volt 50 amp diode transistor J128 10 amp npn darlington power transistors 16 amp npn darlington power transistors 100 amp npn darlington power transistors NPN Silicon Power Transistor DPAK 1N5825 J128 MJD128T4 MSD6100
J128G Abstract: transistor J128 MJD128T4G 1N5825 J128 MSD6100 d marking code dpak transistor Text: MJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors	Original	PDF	MJD128T4G MJD128/D J128G transistor J128 MJD128T4G 1N5825 J128 MSD6100 d marking code dpak transistor
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	OCR Scan	PDF	JF6107 2N6107 E69369, 221D-02 O-220 AN1040.
ST T4 0570 Abstract: 2N4233A 2N4231A transistor 2N6312 Sm T4 0570 Text: 2N4233A Œ i / I O S r 5.0 AMPERE SIUCON POWER TRANSISTOR MEDIUM-POWER SILICON TRANSISTOR 80 V O L T S 75 W A T T S .designed for general-purpose power amplifier and switching applications. • Low Collector-Emitter Saturation Voltage VCE sat = 0.7 Vdc (Max) @ lc = 1.5 Ade	OCR Scan	PDF	2N4233A 2N4231A 2N6312 2N6314 1NS826 MSD6100 ST T4 0570 2N4233A transistor 2N6312 Sm T4 0570

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SWITCHING TRANSISTOR MSD Search Results

SWITCHING TRANSISTOR MSD Result Highlights (5)

SWITCHING TRANSISTOR MSD Datasheets Context Search

MJD127G

MJD122

Untitled

MJD122T4G

100 amp npn darlington power transistors

tip120tip122

MJD127T4

transistor BF245

100MAdc

MJD127T4G

BD791

MOTOROLA TRANSISTOR TO-220

SOT23 JEDEC standard orientation pad size

2N6056

motorola p1f

MMFT6661T1

2SC495

FET 2N5458

TSOP 48 thermal resistance

Untitled

12,000 volt 50 amp diode

J128G

Untitled

ST T4 0570