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    Abstract: No abstract text available
    Text: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of I050ps Iee min. of -60mA ESD protection of 2000V Extended supply voltage option: — VEE = -4.2V to -5.46V Voltage and temperature compensation for Improved noise Immunity


    OCR Scan     		PDF SY100S304 I050ps -60mA F100K SY100S304 GD13fil SY100S304DC D24-1 SY1O0S304FC

    F100K

    Abstract: SY100S304 SY100S304DC SY100S304JC
    Text: * QUINT AND/NAND GATE SYNERGY SEMICONDUCTOR FEA TU RES SY100S304 D E S C R IP T IO N Max. propagation delay of I050ps Ie e min. of -60mA ESD protection of 2000V Extended supply voltage option: — VEE = -4.2V to -5.46V Voltage and temperature compensation for


    OCR Scan     		PDF SY100S304 I050ps -60mA F100K SY100S304 SY100S304DC D24-1 SY1O0S304FC F24-1 F100K SY100S304JC