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    T 2222A Search Results

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    T 2222A Price and Stock

    Diodes Incorporated DXT2222A-13

    TRANS NPN 40V 0.6A SOT89-3
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    DigiKey DXT2222A-13 Reel 157,500 2,500
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    Mouser Electronics DXT2222A-13 63,356
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    Newark DXT2222A-13 Cut Tape 2,095 5
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    Avnet Silica DXT2222A-13 15,000 10 Weeks 2,500
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    New Advantage Corporation DXT2222A-13 15,000 1
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    onsemi MMBT2222AWT1G

    TRANS NPN 40V 0.6A SC70-3
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    DigiKey MMBT2222AWT1G Reel 78,000 3,000
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    Avnet Americas MMBT2222AWT1G Reel 75,000 10 Weeks 3,000
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    Newark MMBT2222AWT1G Cut Tape 418 1
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    Bristol Electronics MMBT2222AWT1G 1,530
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    Rochester Electronics MMBT2222AWT1G 8,970 1
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    TME MMBT2222AWT1G 1
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    ComSIT USA MMBT2222AWT1G 196,808
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    MMBT2222AWT1G 24,000
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    Avnet Asia MMBT2222AWT1G 10 Weeks 60,000
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    Avnet Silica MMBT2222AWT1G 11 Weeks 3,000
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    EBV Elektronik MMBT2222AWT1G 3,000 12 Weeks 3,000
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    Flip Electronics MMBT2222AWT1G 33,260
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    Master Electronics MMBT2222AWT1G 102,000
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    Win Source Electronics MMBT2222AWT1G 59,622
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    onsemi SMMBT2222ALT3G

    TRANS NPN 40V 0.6A SOT23-3
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    DigiKey SMMBT2222ALT3G Reel 50,000 10,000
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    EBV Elektronik SMMBT2222ALT3G 12 Weeks 10,000
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    Flip Electronics SMMBT2222ALT3G 1,505,000
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    Master Electronics SMMBT2222ALT3G 30,000
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    PanJit Group MMBT2222A_R1_00001

    SOT-23, TRANSISTOR
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    DigiKey MMBT2222A_R1_00001 Reel 42,000 3,000
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    MMBT2222A_R1_00001 Cut Tape 15,163 1
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    Ozdisan Elektronik MMBT2222A_R1_00001 1
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    PanJit Group MMDT2222ATB6-AU_R1_000A1

    DUAL SURFACE MOUNT NPN TRANSISTO
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    DigiKey MMDT2222ATB6-AU_R1_000A1 Reel 40,000 4,000
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    T 2222A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original
    PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    CMPT2222A

    Abstract: ja ctb
    Text: Central" Semiconductor Corp. C M P T 2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general pu rpose and


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    PDF CMPT2222A OT-23 CMPT2222A 150mA, ja ctb

    IRF5402

    Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
    Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M


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    PDF BZX55C5V6CSM T0220SM 2N2222CSM 2N2907CSM BCW33CSM BZX55C7V5CSM 2N2369ACSM 2N3209CSM 3250C BCY59CSM IRF5402 IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342

    Untitled

    Abstract: No abstract text available
    Text: 61090 2N 2222AU B S U R F A C E M O U N T NPN G E N E R A L P U R P O S E T R A N S IS T O R mu- OPTOELECTRONIC PRODUCTS DIVISION Features • • • • Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed MIL-S-19500 screening available


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    PDF 2222AU MIL-S-19500 2N2222AUB 100MHz 100kHz 150mA, 300ns, 112b40

    ITT 2222 npn

    Abstract: transistor 2222a ITT 2222 A itt 2222a itt 2222 ip 2222A 2222a 2222A transistor MP02222A MPQ2222
    Text: MPQ2222,A* M AXIM UM RATINGS Symbol Rating MPQ2222 M P02222A Unit C o ll e c t o r - E m i t t e r V o lt a g e v CEO C o lle c t o r - B a s e V o lt a g e VCBO 60 E m it t e r - B a s e V o lt a g e vebo 5 .0 Vdc 'c 500 m Adc C o lle c t o r C u r r e n t — C o n t in u o u s


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    PDF MPQ2222 P02222A O-116 MPQ2222A ITT 2222 npn transistor 2222a ITT 2222 A itt 2222a itt 2222 ip 2222A 2222a 2222A transistor MP02222A

    2222a

    Abstract: tr 2222a national PN2222A national semiconductor 2222A pn2222 national semiconductor 2n2222 national semiconductor br 2222 npn PN2222A NATIONAL MPQ2222 2N/PN2222
    Text: National Semiconductor PN2222 PN2222A 2N2222 2N2222A MMBT2222 MMBT2222A MPQ2222* T O - 1 16 TO- 9 2 T L /G /1 0 1 0 0 -7 T L /G /1 0 1 0 0 -5 T L /G /10100-1 NPN General Purpose Amplifier Electrical Characteristics T a


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    PDF MBT2222/MPQ2222/2N2222A/PN2222A/MMBT2222A 2N2222 2N2222A PN2222 PN2222A MMBT2222 MMBT2222A MPQ2222* MPQ2222 MPQ2222 2222a tr 2222a national PN2222A national semiconductor 2222A pn2222 national semiconductor 2n2222 national semiconductor br 2222 npn PN2222A NATIONAL 2N/PN2222

    2907a TRANSISTOR PNP

    Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
    Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474


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    PDF Q68000-A6474 OT-23 Jan-22-1999 EHPGQ751 2907a TRANSISTOR PNP 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F

    Untitled

    Abstract: No abstract text available
    Text: Central' Semiconductor Corp. C M S T 2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount


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    PDF CMST2222A

    Untitled

    Abstract: No abstract text available
    Text: 61096 Features: • • • • JOIff- G E N E R A L P U R P O S E N P N T R A N S IS T O R (2N 2222A ) OPTOELECTRONIC PRODUCTS DIVISION Applications: Hermetically sealed Rugged package-able to withstand high acceleration load TO-18 package MIL-PRF-19500 screening available


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    PDF MIL-PRF-19500 2N2222A

    transistor 3904

    Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
    Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.


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    PDF OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn

    2N222A

    Abstract: ZT1702 N2222 ZT1483 ZT1701 2N2270 equivalent 2n3600 ZT280 ZT1482 CV7373
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    PDF ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N222A ZT1702 N2222 ZT1483 ZT1701 2N2270 equivalent 2n3600 ZT280 ZT1482 CV7373

    Untitled

    Abstract: No abstract text available
    Text: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


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    PDF AT-38043 OT-343 SC-70) AT-38043 SC-70 5966-1275E

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    t2222

    Abstract: NT2222 NT2222A I/NT2222 NT2907 t2222a ICB01
    Text: NEC NPN SILICON TRANSISTORS NT2222,NT2222A ELECTRON DEVICE GENERAL PU RPO SE A M P L IF IE R A N D H IG H -S P E E D , M E D IU M -P O W E R S W IT C H IN G N P N S IL IC O N E P IT A X IA L T R A N S IS T O R DESCRIPTION The N T2222, N T 2222A are NPN transistors, designed fo r general purpose am plifier and high-speed, mediumpower sw itching applications, feature injection-m olded plastic package fo r high re lia b ility .


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    PDF NT2222 NT2222A T2222, T2907, T2907A T2222A t2222 NT2222A I/NT2222 NT2907 ICB01

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P lastic-E ncap sulate T ra n s is to rs ^ M M B T 2222A LT 1 TRANSISTO R NPN 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25'C) C ollector current ICM: 0.6 A 2.4 C ollector-base voltage « 1-3 * V(BR)CBO: 75V Operating and storage junction temperature range


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    PDF OT-23 MMBT2222ALT1

    Untitled

    Abstract: No abstract text available
    Text: M C C TO-92 Plastic-En capsu late T ran sistors ^ M P S 2222A TR A N S IS T O R N P N FEATURES Pcm; 0.625W (Tamb=25°C) Ic m : 0.6 A Ë j|ftyy iig-b aâB voltage V ( b r )c b o : 7 5 V junction temperature range Tj.Tstg: -55”C to + 150°C ELECTRICAL CHARACTERISTICS


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    PDF 100MHz MPS2222A

    transistor 2222a

    Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
    Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially


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    BFY50 equivalent

    Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
    Text: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments


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    PDF CV7722 bfy50 CV7723 BFY51 CV7724 BFY52 CV7725 CV7726 BFY50 equivalent 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti

    KTN2907AS

    Abstract: KTN2907S KTN2907AS SOT-23 KTN2907S SOT-23
    Text: KEC SEMICONDUCTOR KTN2907S/AS KOREA E LE C T R O N IC S CO.,LTD. T E C H N IC A L D A T A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. ; V Ce =-30V, V eb=-0.5V. DIM


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    PDF KTN2907S/AS -50nA -150mA, -15mA. KTN2222S/2222AS. KTN2907S KTN2907AS 10x8x0 KTN2907AS KTN2907AS SOT-23 KTN2907S SOT-23

    transistor 2222a

    Abstract: pm 2222a 3316 TRANSISTOR
    Text: Thp m LriM I H E W LE T T P ack ard 4.8 VNPN Silicon Bipolar Common Emitter Transistor Ifechnical Data A T-38086 F eatures • 4.8 Volt Pulsed pulse width = 577 jisec, duty cycle = 12.5% /CW Operation • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CWPout


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    PDF T-38086 AT-38086 1998Hewlett-Packard 5965-5959E 5966-3835E transistor 2222a pm 2222a 3316 TRANSISTOR

    BD373

    Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
    Text: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800


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    PDF NSDU07 2IM3700 2M6731 PM3638 PN3638A BC239 BC309 BC368 BC369 O-236AB BD373 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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