T 4A 250V Search Results

Contextual Info: sb H A R R IS S E M I C O N D U C T O R FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

clare MRB

Abstract: b1a12 MRB 154 clare MRB 1a 24
Contextual Info: Clare 1 x 0.1 Inch Grid Relays E ngineering S p ec ific atio n s HRB M M RB MRB C o n tac t Form 1A, 2A, 3A, 4A, 5A, 6A 1A, 2A, 3A, 4A, 5A, 6A 1A, 2A, 3A, 4A, 5A. 6A, 1 B, 2B 50VA 350VDC or Peak AC 0.75A 3.00 A 50VA 350VDC or Peak AC 1.00A 2.00A 10VA 200VDC or

R704A

Abstract: r52 hp 6A125VAC
Contextual Info: — I 14,0 54 2.0 4,0 1 I =o 5,0 IE =o . 19,2 H Panel P a rt 82710025 -o.i 21,5 h ” 1 2 .9 +0,1 T h ic k n e s s N um ber = ,75 t o U L/CSA 1,25 r a t in g R52 6A/125VAC 4A/250V AC 1/10 HP, 125 & 250 VA C 12,5 VDE R70 4A 1A in d u ctiv e / 2 5 0 V A C

Contextual Info: Circuit 1 2.54+0.10 -e a— -O is - -t H l! 01.02 + 0.05 P.C.B 2.54+0.10 A+0.20 LAYOUT 5.80 + 0.25 SPECIFICATIONS 2.62 + 0.20 C u rre n t Rating: 4A AC,DC V oltage Rating: 250V AC,DC T e m p e ra tu re Range: —2 5 'C ~ + 8 5 'C C o n ta c t R esistance: 1 0 m fi Max

VSU3W

Abstract: MDF33 MDF336 Roxburgh SCHEMA MDF318 MDF325 MDF350
Contextual Info: KEYW AY MECHANICAL SPECIFICATION Dia 12 ELECTRICAL SPECIFICATION N E 7xM 6 S TU D R ATED VO LTAG E 4A-0/250V LINE FREQUENCY 50/60H Z TEM PER ATU RE RANGE -25 to 85 DegC 2.0KV DC T ES T VO LTAG E LEAKAG E CURRENT 138mA A T 25 0V 50Hz WEIGHT 2.7Kg FIXING FOR SURGE A R R E S T E R VS U 3W

Contextual Info: 2 .5 4 + 0.10 01.02 + 0.05 LO o ‘Ò +l o \ 1 / - O * CN - 01.00 + 0.05 P.C.B LAYOUT 5.80 + 0.25 SPECIFICATIONS C u rre n t Rating: 4A AC,DC V oltage Rating: 250V AC,DC T e m p e ra tu re Range: - 2 5 'C ~ + 8 5 ’ C C o n ta c t R esistance: 1 0 m fi Max

6A14VT

Abstract: 10A125V 10A-125V 6A250V GRB243F02BB 10A125VAC 4a 250v ac
Contextual Info: 8A 125V AC, 4A 250V AC 6A 250V ~ Contact Resistance Insulation Resistance Æv c^us 1 1 — 1 50m ohm max. DC 500V 100M ohm min. Dielectric Strength AC 1500V 1 minute Operating Temperature -2 5 ° C ~ 85 °C X Circuit Diagram i Y 1 t— t 2 SPST O N -O F F

Contextual Info: SPECIFICATIONS Current Rating: 4A AC,DC Voltage Rating: 250V AC,DC Temperature Range: — 25‘ C ~ + 8 5 ‘ C Contact Resistance: 10m fi Max Insulation Resistance: 1000M0 Min Withstanding Voltage: 1000V A C /m inute Pin Material: B ra s s /T in -p la te d

Contextual Info: SPECIFICATIONS Current Rating: 4A AC,DC Voltage Rating: 250V AC,DC Temperature Range: — 25‘ C ~ + 8 5 ‘ C Contact Resistance: 10m fi Max Insulation Resistance: 1000M0 Min Withstanding Voltage: 1000V A C /m inute Pin Material: B ra s s /T in -p la te d

Contextual Info: SPECIFICATIONS C u rre n t Rating: 4A AC,DC V oltage Rating: 250V AC,DC T e m p e ra tu re Range: — 2 5 'C ~ + 8 5 'C C o n ta c t R esistance: 1 0 m fi Max Insu lation R esistance: 1000M 0 Min W ithstanding V oltage: 1000V A C /m in u te Pin M aterial: B ra s s /T in -p la te d

Contextual Info: SPECIFICATIONS C u rre n t Rating: 4A AC,DC V oltage Rating: 250V AC,DC T e m p e ra tu re Range: — 2 5 'C ~ + 8 5 'C C o n ta c t R esistance: 1 0 m fi Max Insu lation R esistance: 1000M 0 Min W ithstanding V oltage: 1000V A C /m in u te Pin M aterial: B ra s s /T in -p la te d

PBKT

Abstract: mosfet 250V 4A
Contextual Info: FU JI e u iM E ir u tìu e 2SK2292-01L,S FAP-IIA Series > Outline Drawing > Features - N-channel MOS-FET 250V 4A 20W i,in High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications

1E14

Abstract: 2E12 FRL234R4 JANSR2N7278 Rad hard MOSFETS in Harris
Contextual Info: JANSR2N7278 S E M I C O N D U C T O R Formerly Available As FRL234R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 4A, 250V, rDS ON = 0.700Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: Circuit 1 \ -fi S- B8 - - H I s- 01.02 + 0.05 HI P.C.B LAYOUT r 2.54+0.10 5.80 + 0.25 A+0.20 2.62 + 0.20 0.65 + 0.20 o C \l ° +l o lO ro o CM m CN s + 1 ò +l ^t" oo SPECIFICATIONS C u rre n t Rating: 4A AC,DC V oltage Rating: 250V AC,DC T e m p e ra tu re Range: —2 5 'C ~ + 8 5 'C

Contextual Info: JANSR2N7397 S E M I C O N D U C T O R Formerly Available As FSL234R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs January 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

STD4NB25

Contextual Info: STD4NB25  N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA T YPE STD4NB25 ν ν ν ν ν ν V DSS R DS on ID 250 V < 1.1 Ω 4 A TYPICAL RDS(on) = 0.95 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

1E14

Abstract: 2E12 2N7278D 2N7278H 2N7278R FRL234 Rad hard MOSFETS in Harris
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H 2N7278D, 2N7278R 2N7278H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 4A, 250V, RDS(on) = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

5P240

Contextual Info: 2 Brass Housing ABS Setscrew Steel Nickel Ptd. "T" H older Steel Nickel Ptd. Strain Boot PVC Shield C o ve r No. Description n Specifications rating : 100V AC 4A MAX contact resistance : pins-30mQ MAX; shell-50mQ MAX insulation resistance : MIN 100 MEGft @500V DC

Contextual Info: SPECIFICATIONS C urrent Rating: 4A AC,DC Voltage Rating: 250V AC,DC Tem perature Range: — 25'C ~ + 8 5 ‘ C C o n ta ct Resistance: 10m 0 Max Insulation Resistance: 1000MQ Min W ithstanding Voltage: 1000V A C /m in u te Pin Material: B ra s s /T in -p la te d

FSL234R

Abstract: MIL-S-19500 1E14 2E12 FSL234D fsl234 DSA0018976
Contextual Info: S E M I C O N D U C T O R FSL234D, FSL234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 4A, 250V, rDS ON = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: FSL234D, FSL234R h a frris S E M I C O N D U C T O R " M J a m • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Package Features • 4A, 250V, rDS ON : 0.610£1 TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

Contextual Info: SHEET OF RECOMMEND P.C.B. LAYOUT NOTES: 1. ALL DIMENSIONS IN MM 2. GENERAL TOLERANCE: 0 .0 = ± 0 .4 0 .0 0 = ± 0 .2 5 3. TERM. NOS. FOR REF. ONLY 4. RATING: AC 125V 7A, AC 250V 4A 5. CONTACT RESISTANCE: 20m ohm max. a t 5V DC 1A. 6. DIELECTRIC STRENGTH: AC 1500V RMS

C459

Abstract: TDC459 c-459 TS-20-10-C459
Contextual Info: HIGH BREAKING CAPACITY, CERAMIC CARTRIDGE, TIME LAG New Document Number TS-20-10-C459 T SILVERED CAPS TDC459 I Sheet 1 of 1 SPECIF CATION ALL DIMENSION IN MILLIMETRES + Rated Current Maximum mV drop @ In 1A 1.25A 1.6A 2A 2.5A 3.15A 4A 5A 6.3A 8A 10A 350 300

Contextual Info: 14.4 7^2 0 3.4 EUS 2 00 00 i< 2 No. C o n ta c t Terminal Housing Description Brass Bakelite M aterial n l< Silver Ptd. 2 Treat Q'ty Specifications rating : 100V AC 4A MAX c o n ta c t re sista n ce : 30mQ MAX insulation re sistan ce : MIN 100 ME G n @500V DC