T-75 HIGH VOLTAGE DIODES Search Results

diode G21

Abstract: FD4A G22 diode LD4RA LD4A SD15 switching diode g21 DIODE diode G23
Contextual Info: ELECTRICAL CHARACTERISTICS SINGLE HIGH VOLTAGE SWITCHING DIODE Forward Voltage V Dice Type HD3A rw m Max. vF Reverse Current T Ir @ lF Max. @ rr * VR Max. V V mA hA V ns 75 1.2 110 1 75 6 Geometry G19 DUAL HIGH VOLTAGE SWITCHING DIODE V Dice Type HD2A Forward Voltage

DSA003720

Contextual Info: SILICON PLANAR HIGH SPEED SWITCHING DIODES HD2A HD3A HD4A I 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE VR IF Continuous Reverse Voltage Forward Current UNIT 75 V 100 mA mW Power Dissipation at T amb = 25°C P T O T 330 Operating and Storage Temperature Range

Contextual Info: OM6OL6OSB OM50F60SB Prelim inary Data Sheet OM45L120SB OM35F12QSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES |o _ o i © © High Current, High Voltage 60 0V And 1200V. Up To 75 A m p IG B T s With F R E D Diodes FEATURES • • • • •

Contextual Info: DSEI2X161-02A Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition)75# Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current V(RRM) (V) Rep.Pk.Rev. Voltage t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

diode b32

Abstract: b32 diode BAS21 dual COMMON cathode low leakage diodes DIODE b32 01
Contextual Info: 5bE D I TÎ7057Ô 0007053 b32 « Z E T B SEMICONDUCTOR DICE SWITCHING DIODES Dice type BAS21 Description High voltage single diode "V- o \ " 0 5 ^ ZETEX SEMICONDUCTORS Trr V BR v F Min. Max. at Volts Volts mA HA Volts 250 1.0 100 0.1 200 50* G 24 1.0 75

B0004

Abstract: CDSV3-16-G CDSV3-56-G CDSV3-70-G CDSV3-99-G v50s
Contextual Info: COAICHII* Small Signal Switching Diodes CDSV3-99-G/ 70-G/ 5 6 -G /16G % Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SO T-323 D es ig n ed fo r m ounting on sm all s urfa ce . High s p eed sw itching. 0.059 1.80 High m ounting cap ab ility, strong surge

Contextual Info: PA89PA89 • PA89A • PA89A P r o d u c t IPA89A Innnnoovvaa t i o n FFr roomm PA89, High Voltage Power Operational Amplifiers FEATURES • 1140V P-P SIGNAL OUTPUT • WIDE SUPPLY RANGE — ±75V to ±600V • Programmable CURRENT LIMIT • 75 mA CONTINUOUS OUTPUT CURRENT

Contextual Info: 2?QLôMb 0000175 ^1T 1,500 to 20,000 Volts 0.6 to 3 Amps. Standard Recovery SERIES HD O \ 1/4-28 Thread Modular • "Hi-BeP High Voltage Rectifier Assemblies Repetitive Peak Reverse Voltage HVCA Number Vrhm V Volt8 Avg.Forward Current Max. If a v m @ T c 75*C

CIL 1302

Abstract: cil 1305
Contextual Info: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT

Contextual Info: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage

Contextual Info: HD1707 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time20n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m

Contextual Info: HD1706 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time15n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m

Contextual Info: BAS32L Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)5.0m

BAW62

Abstract: FR 309 diode
Contextual Info: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage

Contextual Info: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

MAX4529

Abstract: MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T N2 SOT23-6
Contextual Info: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

IC Analog Switch Chip

Abstract: MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T
Contextual Info: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

1N4000 silicon diodes

Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
Contextual Info: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability

T-75 A HIGH VOLTAGE DIODES

Abstract: ultraFast Recovery Bridge Rectifier fast recovery bridge rectifier BRIDGE RECTIFIERS full wave bridge rectifier Full wave rectifier full wave rectifier 1 PHASE 2HVFWB10KCUF 2HVFWB10KDUF 2HVFWB15KDUF
Contextual Info: 2?0bûHb 0 0 0 0 1 7 4 TÛ3 Ir jN ^ I —F \W C ^ r - SERIES HVFWB UF 5 to 20 KV 2 Amps. 75 ns. Recovery Ultra-Fast • High Voltage • Full-Wave Rectifier Bridge Assemblies HVCA Number Repetitive Peak Reverse Voltage VRRM PerLeg V Volts Avg. Forward Current M ax

BAS21

Contextual Info: SEMICONDUCTOR DICE SWITCHING DIODES vF V BR> Dice type BA S21 Description High voltage single diode Ir Ip T rr Max. at V R Typical Geometry Min. Max. at Volts Volts mA (jA Volts 250 1.0 100 0.1 200 50* G 24 6 G 25 nS H D 3A Single diode 85 1.0 10 1.0 75 H D 2A

diode g29

Contextual Info: SEMICONDUCTOR DICE SWITCHING DIODES vF V BRI Dice type Description T rr Ir Min. Max. at Volts Volts mA «A Volts nS 250 1.0 100 0.1 200 50* G24 lF Max. at V R Typical Geometry BA S21 High voltage single diode H D 3A Single diode 85 1.0 10 1.0 75 6 G25 H D 2A

B0013

Abstract: CDSF4448 CDSU4448 CDSW4148-G CDSW4448-G smd diode T3 SMD Diode r100ohm
Contextual Info: COMCHIP Small Signal Switching Di des S M D D IO D E S P E C IA L IS T CDSW4448-G Voltage: 75 Volts Pd:400mW RoHS Device SOD-123 Features D esig n ed fo r m ounting on sm all s u rfa c e High sp e e d sw itching. High m ounting c ap ability, strong surge w ith stan d , high reliability.

Contextual Info: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs

TRANSISTOR NPN BA RV SOT - 89

Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes