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Essentra Components ST0218A Spiral Wraps, Sleeves, Tubing & Conduit TUBING:SILICON NATURAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ST0218A					1 $100.1 10 $88.52 100 $82.7 1000 $82.7 10000 $82.7	Get Quote
RS	ST0218A	Reel		15 Weeks	1	1 $102.81 10 $89.96 100 $84.82 1000 $84.82 10000 $84.82	Get Quote

T0218A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STPS3045CW Abstract: top-31 T0-218AC STPS12045TV T0247 T0218 stps6045cw STPS80100TV Contextual Info: POWER RECTIFIERS 5 7. SGS-IHOMSON mi TOP3I POWER SCHOTTKY DIODES T0218AC T0247 ISOTOP' Isolated T0247, T0218, TOP3 AND ISOTOP TYPE SCHOTTKY RECTIFIERS T j (max) =150°C (except for 15V) lo Device V rrm V f @ lo I r @ V rrm I fsm Max (V) Max (mA) (A) Package	OCR Scan	T0218AC T0247 T0247, T0218, STPS3045CPI STPS6045CPI STPS3045CP STPS4045CP STPS6045CP STPS20L40CW STPS3045CW top-31 T0-218AC STPS12045TV T0247 T0218 stps6045cw STPS80100TV	PDF
DA 2688 Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688 Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055	OCR Scan	TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688	PDF
Q400414 Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•	OCR Scan	-T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B Q400414 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M	PDF
Contextual Info: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic	OCR Scan	Afl72fln	PDF
Contextual Info: N AflER PHILIPS/DISCRETE OLE D PowerMOS transistor • 0014550 7 BUZ358 r- -i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUZ358 T0218AA; T-39-13 T0014flSS	PDF
Contextual Info: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is	OCR Scan	BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS	PDF
buz349 Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349	PDF
T1C263M Abstract: q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006 Contextual Info: PART No. ITrms Amps PACKAGE VDRM IDRM Volts mAmps Q1 TRIAC IGT Q2 Q3 mAmps Q4 VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 200 400 600 200 400 600 .010 .010 .010 .010 .010 .010 10 10 10 5	OCR Scan	MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 SC92B SC92C SC92D SC92M T1C263M q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006	PDF
BUZ358 Abstract: LDM80 Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53131 BUZ358 r-31- T0218AA; T-39-13 800VC BUZ358 LDM80	PDF
transistor KF 517 Abstract: BUZ310 KF 517 BUZ31 BUZ-310 B53 transistor Contextual Info: N AMER PH ILI PS/DIS CRET E : ObE D Pow erM O Stransistor • 1 ^ 53^31 D D iqflBI 5 ■ B U Z 31Ü ^ 2^-1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ31Ã T0218AA; bb53T31 BUZ310 T-39-11 transistor KF 517 BUZ310 KF 517 BUZ31 BUZ-310 B53 transistor	PDF
BUZ384 Contextual Info: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET with fast-recovery reverse diode. This device is	OCR Scan	BUZ384 T0218AA; BUZ384 T-39-13	PDF
MC 140 transistor Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a Contextual Info: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUZ355T is-18 T0218AA; BUZ355 T-39-13 MC 140 transistor "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a	PDF
BUZ311 Abstract: P70D Contextual Info: N AMER PHILIPS/DISCRETE DbE D m PowerMOS transistor □bS3T31 OGlMaBb E • BUZ311 T* ~ 3 I I^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ311 T0218AA; P70D	PDF
Contextual Info: N ANER PHI L I P S / D I S CR E T E bbSBTBl 0 0 1 4 7 7 3 4 ObE D HJZ330 T - 31-/3 PowerMOS transistor May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	HJZ330 T0218AA; BUZ330 T-39-13 BUZ33U	PDF

BUZ357 Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • b b S a ^ l 0014343 T B U Z 357 T~ ~ 3^ - 13- May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	LLS3T31 BUZ357 T-39-13 D014fl4c BUZ357	PDF
transistor et 455 Abstract: transistor et 454 Contextual Info: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	0D147bb T0218AA; 00147bT T-39-13 BUZ351 001477E transistor et 455 transistor et 454	PDF
Contextual Info: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53131 BUZ310 T0218AA; T-39-11 bbS3T31 T-39-H	PDF
T0247AC Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m	OCR Scan	B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212	PDF
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40	PDF
BT808 Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH Contextual Info: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•	OCR Scan	-T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B BT808 Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH	PDF
IRF 544 N MOSFET Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511 Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no	OCR Scan		PDF
BUZ356 Abstract: T0218AA BUZ-356 Contextual Info: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356	PDF
BUZ348 Contextual Info: N AMER PHILIPS/DISCRETE ObE PowerMOS transistor D • tab S 3 e]31 0014730 BUZ348 . T - 3 < M " 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	001M73Ã BUZ348 T0218AA; T-39-13 BUZ348	PDF
BUZ350 Abstract: IY TRANSISTOR BUZ35 at ma hi mvs Contextual Info: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ350 T0218AA; T-39-13 BUZ350 IY TRANSISTOR BUZ35 at ma hi mvs	PDF

T0218A Search Results

T0218A Price and Stock

Essentra Components ST0218A

T0218A Datasheets Context Search

STPS3045CW

DA 2688

Q400414

buz349

T1C263M

BUZ358

transistor KF 517

BUZ384

MC 140 transistor

BUZ311

BUZ357

transistor et 455

T0247AC

IGBT 200A 1200V

BT808

IRF 544 N MOSFET

BUZ356

BUZ348

BUZ350